公开(公告)号：US20180226447A1

公开(公告)日：2018-08-09

申请号：US15945530

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.

公开(公告)号：US11195864B2

公开(公告)日：2021-12-07

申请号：US16290832

申请日：2019-03-01

Applicant: OmniVision Technologies, Inc.

Inventor： Ming Zhang ,  Yin Qian ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

Abstract: A flip-chip sample imaging device with self-aligning lid includes an image sensor chip, a fan-out substrate, and a lid. The image sensor chip includes (a) a pixel array sensitive to light incident on a first side of the image sensor chip and (b) first electrical contacts disposed on the first side and electrically connected to the pixel array. The fan-out substrate is disposed on the first side, is electrically connected to the first electrical contacts, forms an aperture over the pixel array to partly define a sample chamber over the pixel array, and forms a first surface facing away from the first side. The lid is disposed on the first surface of the fan-out substrate, facing away from the first side, to further define the chamber. The lid includes an inner portion protruding into the aperture to align the lid relative to the fan-out substrate.

公开(公告)号：US09966396B2

公开(公告)日：2018-05-08

申请号：US15239537

申请日：2016-08-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Ming Zhang ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

公开(公告)号：US10418408B1

公开(公告)日：2019-09-17

申请号：US16016057

申请日：2018-06-22

Applicant: OmniVision Technologies, Inc.

Inventor： Yuanwei Zheng ,  Chia-Chun Miao ,  Gang Chen ,  Yin Qian ,  Duli Mao ,  Dyson H. Tai ,  Lindsay Grant

IPC: H01L27/146 ,  H04N5/378

Abstract: An image sensor includes a plurality of photodiodes arranged in an array and disposed in a semiconductor material to receive light through a first surface of the semiconductor material. At least part of the semiconductor material is curved. A carrier wafer is attached to a second surface, opposite the first surface, of the semiconductor material, and a polymer layer is attached to the carrier wafer, so that the carrier wafer is disposed between the polymer layer and the semiconductor material.

公开(公告)号：US20170317124A1

公开(公告)日：2017-11-02

申请号：US15430071

申请日：2017-02-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.

公开(公告)号：US20170213863A1

公开(公告)日：2017-07-27

申请号：US15239537

申请日：2016-08-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Ming Zhang ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

公开(公告)号：US09608023B1

公开(公告)日：2017-03-28

申请号：US15144194

申请日：2016-05-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. A light blocking layer is disposed in recessed regions of the transparent shield, and the recessed regions are disposed on an illuminated side of the transparent shield. The light blocking layer is disposed to prevent light from reflecting off edges of the transparent shield into the image sensor.

公开(公告)号：US10892290B2

公开(公告)日：2021-01-12

申请号：US15937742

申请日：2018-03-27

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson H. Tai

IPC: H01L27/146 ,  H01L23/48 ,  H01L23/522 ,  H01L23/00 ,  H01L21/768 ,  H01L23/528 ,  H01L23/532 ,  H01L21/288 ,  H01L21/3213

Abstract: Packaged photosensor ICs are made by fabricating an integrated circuit (IC) with multiple bondpads; forming vias from IC backside through semiconductor to expose a first layer metal; depositing conductive metal plugs in the vias; depositing interconnect metal; depositing solder-mask dielectric over the interconnect metal and openings therethrough; forming solder bumps on interconnect metal at the openings in the solder-mask dielectric; and bonding the solder bumps to conductors of a package. The photosensor IC has a substrate; multiple metal layers separated by dielectric layers formed on a first surface of the substrate into which transistors are formed; multiple bondpad structures formed of at least a first metal layer of the metal layers; vias with metal plugs formed through a dielectric over a second surface of the semiconductor substrate, interconnect metal on the dielectric forming connection shapes, and shapes of the interconnect layer coupled to each conductive plug and to solder bumps.

公开(公告)号：US20190140005A1

公开(公告)日：2019-05-09

申请号：US15806522

申请日：2017-11-08

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson Tai

IPC: H01L27/146

Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.

公开(公告)号：US10211243B2

公开(公告)日：2019-02-19

申请号：US15945541

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.