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    HALF QUAD PHOTODIODE (QPD) TO IMPROVE QPD CHANNEL IMBALANCE
    1.
    发明公开
    HALF QUAD PHOTODIODE (QPD) TO IMPROVE QPD CHANNEL IMBALANCE 审中-公开

    公开(公告)号：US20230395628A1

    公开(公告)日：2023-12-07

    申请号：US17832399

    申请日：2022-06-03

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chin Poh Pang ,  Wei Deng ,  Chen-Wei Lu ,  Da Meng ,  Guansong Liu ,  Yin Qian ,  Xiaodong Yang ,  Hongjun Li ,  Zhiqiang Lin ,  Chao Niu

    IPC: H01L27/146

    CPC classification number: H01L27/14627 ,  H01L27/14645

    Abstract: Half Quad Photodiode (QPD) for improving QPD channel imbalance. In one embodiment, an image sensor includes a plurality of pixels arranged in rows and columns of a pixel array that is disposed in a semiconductor material. Each pixel includes a plurality of subpixels. Each subpixel comprises a plurality of first photodiodes, a plurality of second photodiodes and a plurality of third photodiodes. The plurality of pixels are configured to receive incoming light through an illuminated surface of the semiconductor material. A plurality of small microlenses are individually distributed over individual first photodiodes and individual second photodiodes of each subpixel. A plurality of large microlenses are each distributed over a plurality of third photodiodes of each subpixel. A diameter of the small microlenses is smaller than a diameter of the large microlenses.

    Cell deep trench isolation pyramid structures for CMOS image sensors
    2.
    发明授权
    Cell deep trench isolation pyramid structures for CMOS image sensors 有权

    公开(公告)号：US11538836B2

    公开(公告)日：2022-12-27

    申请号：US16993018

    申请日：2020-08-13

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hui Zang ,  Gang Chen ,  Chao Niu ,  Zhiqiang Lin

    IPC: H01L27/146

    Abstract: A pixel cell includes a photodiode disposed proximate to a front side of a semiconductor layer to generate image charge in response to incident light directed through a backside of the semiconductor layer. A cell deep trench isolation (CDTI) structure is disposed along an optical path of the incident light to the photodiode and proximate to the backside of the semiconductor layer. The CDTI structure includes a plurality of portions arranged in the semiconductor layer. Each of the plurality of portions extends a respective depth from the backside towards the front side of the semiconductor layer. The respective depth of each of the plurality of portions is different than a respective depth of a neighboring one of the plurality of portions. Each of the plurality of portions is laterally separated and spaced apart from said neighboring one of the plurality of portions in the semiconductor layer.

    MULTI-LAYER METAL STACK FOR ACTIVE PIXEL REGION AND BLACK PIXEL REGION OF IMAGE SENSOR AND METHODS THEREOF
    4.
    发明公开
    MULTI-LAYER METAL STACK FOR ACTIVE PIXEL REGION AND BLACK PIXEL REGION OF IMAGE SENSOR AND METHODS THEREOF 审中-公开

    公开(公告)号：US20230207592A1

    公开(公告)日：2023-06-29

    申请号：US17561351

    申请日：2021-12-23

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Chao Niu

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14685 ,  H01L27/14605

    Abstract: An image sensor includes an active pixel photodiode, a black pixel photodiode, a metal grid structure, and a light shield. Each of the active pixel photodiode and the black pixel photodiode are disposed in a semiconductor material having a first side and a second side opposite the first side. The first side of the semiconductor material is disposed between the light shield and the black pixel photodiode. The metal grid structure includes a first multi-layer metal stack including a first metal and a second metal different from the first metal. The light shield includes a second multi-layer stack including the first metal and the second metal. A first thickness of the first multi-layer metal stack is less than a second thickness of the second multi-layer metal stack.

    Flare-suppressing image sensor
    5.
    发明授权
    Flare-suppressing image sensor 有权

    公开(公告)号：US11860383B2

    公开(公告)日：2024-01-02

    申请号：US17392023

    申请日：2021-08-02

    Applicant: OmniVision Technologies, Inc.

    Inventor： Gang Chen ,  Qin Wang ,  Chao Niu

    IPC: H04N25/61 ,  G02B3/00 ,  H04N25/70

    CPC classification number: G02B3/0043 ,  H04N25/61 ,  H04N25/70

    Abstract: Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

    CENTRAL DEEP TRENCH ISOLATION SHIFT
    6.
    发明公开
    CENTRAL DEEP TRENCH ISOLATION SHIFT 审中-公开

    公开(公告)号：US20230268357A1

    公开(公告)日：2023-08-24

    申请号：US17680045

    申请日：2022-02-24

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Hui Zang ,  Chao Niu

    IPC: H01L27/146

    CPC classification number: H01L27/14603 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1464

    Abstract: Image sensors include a pixel array arranged about an array center, each pixel of the pixel array having a photodiode formed in a semiconductor substrate, and a central deep trench isolation structure disposed in the semiconductor substrate relative to a pixel center between the photodiode and an illuminated surface of the semiconductor substrate. If the pixel center is not coincident with the array center, then the central deep trench isolation structure is disposed at a CDTI shift distance away from the pixel center.

    IMAGE SENSOR WITH VARYING THICKNESS DIELECTRIC LAYER
    7.
    发明公开
    IMAGE SENSOR WITH VARYING THICKNESS DIELECTRIC LAYER 审中-公开

    公开(公告)号：US20240332329A1

    公开(公告)日：2024-10-03

    申请号：US18743796

    申请日：2024-06-14

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Kazufumi Watanabe ,  Chih-Wei Hsiung ,  Chao Niu

    IPC: H01L27/146

    CPC classification number: H01L27/14623 ,  H01L27/14605 ,  H01L27/14685

    Abstract: An image sensor includes an active pixel photodiode, a black pixel photodiode, a metal grid structure, a light shield, and a varying thickness dielectric layer. The varying thickness dielectric layer includes a first portion having a first dielectric layer thickness and a second portion having a second dielectric layer thickness different from the first dielectric layer thickness. The metal grid structure is disposed between the first portion of the varying thickness dielectric layer and a semiconductor material. The light shield is disposed between the second portion of the varying thickness dielectric layer and the black pixel photodiode.

    TRENCH BALANCE STRUCTURE PATTERN IN RED PHOTODIODES OF A PIXEL ARRAY WITH QUAD BAYER COLOR FILTER
    8.
    发明公开
    TRENCH BALANCE STRUCTURE PATTERN IN RED PHOTODIODES OF A PIXEL ARRAY WITH QUAD BAYER COLOR FILTER 审中-公开

    公开(公告)号：US20240304642A1

    公开(公告)日：2024-09-12

    申请号：US18180731

    申请日：2023-03-08

    Applicant: OMNIVISION TECHNOLOGIES, INC.

    Inventor： Chao Niu ,  Yuanwei Zheng ,  Zhiqiang Lin

    IPC: H01L27/146 ,  H04N25/78

    CPC classification number: H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14647 ,  H04N25/78

    Abstract: A pixel array includes 2×2 groupings of photodiodes to generate image charge in response to incident light directed through a back side of the semiconductor layer. A Quad Bayer filter is disposed over the back side of the semiconductor layer over the 2×2 groupings of photodiodes. Each color filter of the Quad Bayer CFA is disposed over a respective one of the plurality of 2×2 groupings of photodiodes. Trench balance structures are disposed in the semiconductor layer. Each of the trench balance structures is disposed in the semiconductor layer between one of the photodiodes and a respective one of the red color filters of the Quad Bayer filter. None of the trench balance structures are disposed between any of the photodiodes and respective green color filters or blue color filters of the Quad Bayer filter.

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