公开(公告)号：US10429699B2

公开(公告)日：2019-10-01

申请号：US15428307

申请日：2017-02-09

Applicant: OmniVision Technologies, Inc.

Inventor： Christopher Morgan Walker ,  Libo Weng ,  Oray Orkun Cellek ,  Ming Zhang ,  Yin Qian ,  Dyson Hsin-Chih Tai ,  Regis Fan

IPC: G02F1/1337 ,  G02F1/1333 ,  G02F1/1362 ,  G09G3/36

Abstract: A liquid crystal display includes a display area and a border area at least partially surrounding the display area, where the display area displays images for viewing and the border area displays display-protection images, which are used to control ion migration in the liquid crystal layer. In a more particular embodiment, the border area displays a series of checkerboard pattern(s), where the checkerboard patterns can alternate between initial and inverted values. The display-protection images protect the liquid crystal display from migrating ions accumulating in particular regions of the pixel array and causing permanent defects in the display area. A liquid crystal display that includes a liquid crystal alignment layer having a plurality of liquid crystal alignment directions is also disclosed. The customized liquid crystal alignment director(s) over the border area promote ion migration away from the display area.

公开(公告)号：US20180366513A1

公开(公告)日：2018-12-20

申请号：US15628304

申请日：2017-06-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Oray Orkun Cellek ,  Duli Mao ,  Xianfu Cheng ,  Xin Wang ,  Bill Phan ,  Dyson Tai

IPC: H01L27/148 ,  H01L27/146 ,  H04N5/378

CPC classification number: H01L27/14831 ,  H01L27/14621 ,  H01L27/14868 ,  H04N5/35563 ,  H04N5/3559 ,  H04N5/37452 ,  H04N5/37457 ,  H04N5/378

Abstract: A single-exposure high dynamic range (HDR) image sensor includes a first photodiode and a second photodiode, with a smaller full-well capacity than the first photodiode, disposed in a semiconductor material. The image sensor also includes a first floating diffusion disposed in the semiconductor material and a first transfer gate coupled to the first photodiode to transfer first image charge accumulated in the first photodiode into the first floating diffusion. A second floating diffusion is disposed in the semiconductor material and a second transfer gate is coupled to the second photodiode to transfer second image charge accumulated in the second photodiode into the second floating diffusion. An attenuation layer is disposed between the second photodiode and image light directed towards the single-exposure HDR image sensor to block a portion of the image light from reaching the second photodiode.

公开(公告)号：US09818791B1

公开(公告)日：2017-11-14

申请号：US15285408

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Zhiqiang Lin ,  Keiji Mabuchi ,  Gang Chen ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Dajiang Yang

IPC: H01L27/146 ,  H04N5/378 ,  H04N5/235

CPC classification number: H01L27/14647 ,  H01L27/14621 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L27/14687 ,  H01L27/1469 ,  H04N5/2355 ,  H04N5/35563 ,  H04N5/37457 ,  H04N5/378

Abstract: A stacked image sensor includes a first plurality of photodiodes, including a first photodiode and a second photodiode, disposed in a first semiconductor material. A thickness of the first semiconductor material proximate to the first photodiode is less than the thickness of the first semiconductor material proximate to the second photodiode. A second plurality of photodiodes is disposed in a second semiconductor material. The second plurality of photodiodes is optically aligned with the first plurality of photodiodes. An interconnect layer is disposed between the first semiconductor material and the second semiconductor material. The interconnect layer includes an optical shield disposed between the second photodiode and a third photodiode included in the second plurality of photodiodes. The optical shield prevents a first portion of image light from reaching the third photodiode.

公开(公告)号：US20140299957A1

公开(公告)日：2014-10-09

申请号：US13858754

申请日：2013-04-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

公开(公告)号：US09936153B1

公开(公告)日：2018-04-03

申请号：US15285352

申请日：2016-10-04

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin

IPC: H04N5/361 ,  H04N5/374 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/361 ,  H01L27/14636 ,  H01L27/14656 ,  H04N5/374 ,  H04N5/378

Abstract: Apparatuses and methods for image sensors with pixels that reduce or eliminate flicker induced by high intensity illumination are disclosed. An example image sensor may include a photodiode, a transfer gate, an anti-blooming gate, and first and second source follower transistors. The photodiode may capture light and generate charge in response, and the photodiode may have a charge capacity. The transfer gate may selectively transfer charge to a first floating diffusion, and the anti-blooming gate may selectively transfer excess charge to a second floating diffusion when the generated charge is greater than the photodiode charge capacity. The first source-follower transistor may be directly coupled to the first floating diffusion by a gate, the first source-follower to selectively output a first signal to a first bitline in response to enablement of a first row selection transistor, and the second source-follower transistor may be capacitively-coupled to the second floating diffusion, the second source-follower to selectively output a second signal to a second bitline in response to enablement of a second row selection transistor.

公开(公告)号：US09911773B2

公开(公告)日：2018-03-06

申请号：US14743385

申请日：2015-06-18

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Zhenhong Fu ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H01L27/146 ,  H04N5/374 ,  H04N5/355

CPC classification number: H01L27/14621 ,  H01L27/14603 ,  H01L27/14623 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14645 ,  H04N5/35563 ,  H04N5/374

Abstract: An image sensor includes photodiodes arranged in semiconductor material. Each of the photodiodes is identically sized and is fabricated in the semiconductor material with identical semiconductor processing conditions. The photodiodes are organized into virtual large-small groupings including a first photodiode and a second photodiode. Microlenses are disposed over the semiconductor material with each of microlenses disposed over a respective photodiode. A first microlens is disposed over the first photodiode, and a second microlens is disposed over the second photodiode. A mask is disposed between the first microlens and the first photodiode. The mask includes an opening through which a first portion of incident light directed through the first microlens is directed to the first photodiode. A second portion of the incident light directed through the first microlens is blocked by the mask from reaching the first photodiode. There is no mask between the second microlens and the second photodiode.

公开(公告)号：US09287308B2

公开(公告)日：2016-03-15

申请号：US13858754

申请日：2013-04-08

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Sing-Chung Hu ,  Dajiang Yang ,  Oray Orkun Cellek ,  Hsin-Chih Tai ,  Gang Chen

IPC: H01L31/062 ,  H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14636 ,  H01L27/14643

Abstract: An image sensor pixel includes one or more photodiodes disposed in a semiconductor layer. Pixel circuitry is disposed in the semiconductor layer coupled to the one or more photodiodes. A passivation layer is disposed proximate to the semiconductor layer over the pixel circuitry and the one or more photodiodes. A contact etch stop layer is disposed over the passivation layer. One or more metal contacts are coupled to the pixel circuitry through the contact etch stop layer. One or more isolation regions are defined in the contact etch stop layer that isolate contact etch stop layer material through which the one or more metal contacts are coupled are coupled to the pixel circuitry from the one or more photodiodes.

Abstract translation: 图像传感器像素包括设置在半导体层中的一个或多个光电二极管。 像素电路设置在耦合到一个或多个光电二极管的半导体层中。 钝化层靠近半导体层设置在像素电路和一个或多个光电二极管的上方。 接触蚀刻停止层设置在钝化层上。 一个或多个金属触点通过接触蚀刻停止层耦合到像素电路。 在接触蚀刻停止层中限定一个或多个隔离区，其隔离接触蚀刻停止层材料，一个或多个金属接触通过该接触蚀刻停止层材料从一个或多个光电二极管耦合到像素电路。

公开(公告)号：US09224881B2

公开(公告)日：2015-12-29

申请号：US13856993

申请日：2013-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chih-Wei Hsiung ,  Oray Orkun Cellek ,  Gang Chen ,  Duli Mao ,  Vincent Venezia ,  Hsin-Chih Tai

IPC: H01L21/02 ,  H01L31/0216 ,  H01L27/146

CPC classification number: H01L31/02161 ,  H01L27/1462 ,  H01L27/1464

Abstract: An imaging device includes a semiconductor substrate having a photosensitive element for accumulating charge in response to incident image light. The semiconductor substrate includes a light-receiving surface positioned to receive the image light. The imaging device also includes a negative charge layer and a charge sinking layer. The negative charge layer is disposed proximate to the light-receiving surface of the semiconductor substrate to induce holes in an accumulation zone in the semiconductor substrate along the light-receiving surface. The charge sinking layer is disposed proximate to the negative charge layer and is configured to conserve or increase an amount of negative charge in the negative charge layer. The negative charge layer is disposed between the semiconductor substrate and the charge sinking layer.

Abstract translation: 成像装置包括具有用于响应于入射图像光累积电荷的光敏元件的半导体衬底。 半导体衬底包括被定位成接收图像光的光接收表面。 成像装置还包括负电荷层和电荷沉没层。 负电荷层设置在半导体衬底的光接收表面附近以沿着光接收表面在半导体衬底中的累积区域中引起空穴。 电荷沉降层设置成靠近负电荷层，并且被配置为在负电荷层中保存或增加负电荷的量。 负电荷层设置在半导体衬底和电荷沉降层之间。

公开(公告)号：US20150295007A1

公开(公告)日：2015-10-15

申请号：US14250192

申请日：2014-04-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Oray Orkun Cellek ,  Dajiang Yang ,  Sing-Chung Hu ,  Philip John Cizdziel ,  Dyson Tai ,  Gang Chen ,  Cunyu Yang ,  Zhiqiang Lin

IPC: H01L27/146 ,  H01L31/167

CPC classification number: H01L27/14645 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14625 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14649 ,  H01L27/14658 ,  H01L31/167

Abstract: An image sensor pixel includes a photosensitive element, a floating diffusion region, a transfer gate, a dielectric charge trapping region, and a first metal contact. The photosensitive element is disposed in a semiconductor layer to receive electromagnetic radiation along a vertical axis. The floating diffusion region is disposed in the semiconductor layer, while the transfer gate is disposed on the semiconductor layer to control a flow of charge produced in the photosensitive element to the floating diffusion region. The dielectric charge trapping device is disposed on the semiconductor layer to receive electromagnetic radiation along the vertical axis and to trap charges in response thereto. The dielectric charge trapping device is further configured to induce charge in the photosensitive element in response to the trapped charges. The first metal contact is coupled to the dielectric charge trapping device to provide a first bias voltage to the dielectric charge trapping device.

Abstract translation: 图像传感器像素包括感光元件，浮动扩散区域，传输栅极，介电电荷俘获区域和第一金属触点。 感光元件设置在半导体层中以沿垂直轴接收电磁辐射。 浮动扩散区域设置在半导体层中，而传输栅极设置在半导体层上，以控制在感光元件中产生的电荷流向浮动扩散区域。 电介质电荷俘获装置设置在半导体层上以沿垂直轴接收电磁辐射并响应于此捕获电荷。 介电电荷俘获装置还被配置为响应于被捕获的电荷而在感光元件中感应电荷。 第一金属触点耦合到介电电荷俘获装置，以向介电电荷俘获装置提供第一偏置电压。

公开(公告)号：US10044960B2

公开(公告)日：2018-08-07

申请号：US15164276

申请日：2016-05-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Duli Mao ,  Trygve Willassen ,  Johannes Solhusvik ,  Keiji Mabuchi ,  Gang Chen ,  Sohei Manabe ,  Dyson H. Tai ,  Bill Phan ,  Oray Orkun Cellek ,  Zhiqiang Lin ,  Siguang Ma ,  Dajiang Yang ,  Boyd Albert Fowler

IPC: H04N5/374 ,  H04N5/232

Abstract: An image sensor for detecting light-emitting diode (LED) without flickering includes a pixel array with pixels. Each pixel including subpixels including a first and a second subpixel, dual floating diffusion (DFD) transistor, and a capacitor coupled to the DFD transistor. First subpixel includes a first photosensitive element to acquire a first image charge, and a first transfer gate transistor to selectively transfer the first image charge from the first photosensitive element to a first floating diffusion (FD) node. Second subpixel includes a second photosensitive element to acquire a second image charge, and a second transfer gate transistor to selectively transfer the second image charge from the second photosensitive element to a second FD node. DFD transistor coupled to the first and the second FD nodes. Other embodiments are also described.