公开(公告)号：US20240068096A1

公开(公告)日：2024-02-29

申请号：US18199223

申请日：2023-05-18

申请人： Applied Materials, Inc.

发明人： Anantha K. SUBRAMANI ,  Seyyed Abdolreza FAZELI ,  Yang GUO ,  Chandrashekara BAGINAGERE ,  Ramcharan SUNDAR ,  Steven MOSBRUCKER ,  John LEE ,  Yiyang WAN ,  Shumao ZHANG ,  Dhritiman Subha KASHYAP ,  Azhar ALI M.A

IPC分类号： C23C16/455 ,  C23C16/505

CPC分类号： C23C16/4557 ,  C23C16/505

摘要： In some embodiments, a showerhead assembly includes a heated showerhead having a heater plate and a gas distribution plate coupled together; an ion filter spaced from the heated showerhead; a spacer ring in contact between the heated showerhead and the ion filter; a remote plasma region between the heated showerhead and the ion filter; an upper isolator spaced from the spacer ring and supported on the ion filter; a sealing ring fastened to the heated showerhead sealing against the upper isolator and pushing the upper isolator against the ion filter; a gap between a bottom of the gas distribution plate and a top of the ion filter, the gap being in fluid communication with the remote plasma region; a first passage extending through the heater plate; and a second passage in communication with the first passage and extending through the gas distribution plate, the second passage extending to the gap.

公开(公告)号：US20180087155A1

公开(公告)日：2018-03-29

申请号：US15704850

申请日：2017-09-14

申请人： Applied Materials, Inc.

发明人： Anantha K. SUBRAMANI ,  Tza-Jing GUNG ,  Praburam GOPALRAJA ,  Hari K. PONNEKANTI

IPC分类号： C23C16/455 ,  C23C14/34 ,  C23C14/35 ,  H01J37/34 ,  C23C28/02 ,  C23C28/04

摘要： In one implementation, a sputtering showerhead assembly is provided. The sputtering showerhead assembly comprises a faceplate comprising a sputtering surface comprising a target material and a second surface opposing the sputtering surface, wherein a plurality of gas passages extend from the sputtering surface to the second surface. The sputtering showerhead assembly comprises further comprises a backing plate positioned adjacent to the second surface of the faceplate. The backing plate comprises a first surface and a second surface opposing the first surface. The sputtering showerhead assembly has a plenum defined by the first surface of the backing plate and the second surface of the faceplate. The sputtering showerhead assembly comprises further comprises one or more magnetrons positioned along the second surface of the backing plate.

公开(公告)号：US20230335377A1

公开(公告)日：2023-10-19

申请号：US17721417

申请日：2022-04-15

申请人： Applied Materials, Inc.

发明人： Anantha K. SUBRAMANI ,  Seyyed Abdolreza FAZELI ,  Yang GUO ,  Chandrashekara BAGINAGERE ,  Ramcharan SUNDAR ,  Yunho KIM ,  Rajasekhar PATIBANDLA

IPC分类号： H01J37/32 ,  C23C16/455 ,  C23C16/505

CPC分类号： H01J37/3244 ,  H01J37/32422 ,  H01J37/32357 ,  C23C16/45565 ,  C23C16/505 ,  H01J2237/332

摘要： Methods and apparatus for substrate processing are described. In some embodiments a showerhead assembly includes a heated showerhead having a heater and a gas diffusion plate coupled to the heater, the gas diffusion plate having a plurality of channels extending through the gas diffusion plate; an ion filter spaced from the heated showerhead, the ion filter having a first side facing the heated showerhead and a second side opposite the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring in contact between the heated showerhead and the ion filter, the heat transfer ring being thermally conductive and electrically insulative, the heat transfer ring comprised of a plurality of elements spaced from one another along an interface between the heated showerhead and the ion filter; and a remote plasma region defined between the heated showerhead and the ion filter.

公开(公告)号：US20200013597A1

公开(公告)日：2020-01-09

申请号：US16573265

申请日：2019-09-17

申请人： APPLIED MATERIALS, INC.

发明人： Anantha K. SUBRAMANI ,  Hanbing WU ,  Wei W. WANG ,  Ashish GOEL ,  Srinivas GUGGILLA ,  Lavinia NISTOR

IPC分类号： H01J37/34 ,  C23C14/34

摘要： Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

公开(公告)号：US20180142352A1

公开(公告)日：2018-05-24

申请号：US15808543

申请日：2017-11-09

申请人： Applied Materials, Inc.

发明人： Kartik SHAH ,  Nisha Prakash HOLLA ,  Vijaykumar KRITHIVASAN ,  Anantha K. SUBRAMANI ,  Hamid NOORBAKHSH

IPC分类号： C23C16/455 ,  C23C16/44 ,  C23C16/452

摘要： An apparatus and method for cooling a gas distribution assembly with a cooling plate. The cooling plate having a body having a top surface, an outer perimeter, a center, an inner zone and an outer zone. A plurality of channels formed through the top surface. The plurality of channels having a first outer channel having one or more first outer channel segments configured for flowing a first cooling fluid from a cooling fluid inlet to a cooling fluid outlet and a first inner channel disposed between the first outer channel and the center having one or more first inner channel segments configured for flowing a second cooling fluid from a cooling fluid inlet to a cooling fluid outlet wherein flow in adjacent segments is in an opposite direction.

公开(公告)号：US20140262767A1

公开(公告)日：2014-09-18

申请号：US13836328

申请日：2013-03-15

申请人： APPLIED MATERIALS, INC.

发明人： Anantha K. SUBRAMANI ,  Tza-Jing GUNG ,  Prashanth KOTHNUR ,  Hanbing WU

IPC分类号： H01L21/67

CPC分类号： C23C14/3414 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/345

摘要： Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

摘要翻译： 本文提供了用于半导体处理室的溅射源的实施例。 在一些实施例中，用于半导体处理室的溅射源可以包括：靶，其包括待沉积在基底上的磁性材料，所述磁性材料包括物料被溅射的前表面和相对的后表面; 以及设置在所述靶的后表面附近并相对于所述靶的中心轴对称设置的外磁体，其中所述靶具有形成在所述靶的后表面中的邻近所述外磁体设置的环形槽，以减小磁导率 邻近外磁体的靶的区域，其中所述凹槽是具有大于90度的内角的未填充的V形凹槽。

公开(公告)号：US20170271182A1

公开(公告)日：2017-09-21

申请号：US15613906

申请日：2017-06-05

申请人： Applied Materials, Inc.

发明人： Hanbing WU ,  Anantha K. SUBRAMANI ,  Wei W. WANG ,  Aaron Muir HUNTER

IPC分类号： H01L21/67 ,  G01J5/08 ,  H01L21/687 ,  G01J5/00

CPC分类号： H01L21/67248 ,  G01J5/0007 ,  G01J5/0818 ,  H01L21/68742

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.

公开(公告)号：US20170053784A1

公开(公告)日：2017-02-23

申请号：US15240927

申请日：2016-08-18

申请人： APPLIED MATERIALS, INC.

发明人： Anantha K. SUBRAMANI ,  Hanbing WU ,  Wei W. WANG ,  Ashish GOEL ,  Srinivas GUGGILLA ,  Lavinia NISTOR

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3417 ,  C23C14/3464 ,  C23C14/564 ,  H01J37/32871 ,  H01J37/3429 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3464 ,  H01J37/3485

摘要： Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

摘要翻译： 本文提供了用于共溅射多个靶材料的方法和装置的实施例。 在一些实施例中，包括用于支撑衬底的衬底支撑件的处理室; 耦合到载体并且具有相应的多个靶以溅射到所述衬底上的多个阴极; 以及耦合到所述载体并在所述多个靶的相邻对之间延伸的过程屏蔽。

公开(公告)号：US20140269826A1

公开(公告)日：2014-09-18

申请号：US14189664

申请日：2014-02-25

申请人： Applied Materials, Inc.

发明人： Hanbing WU ,  Anantha K. SUBRAMANI ,  Wei W. WANG ,  Aaron Muir HUNTER

IPC分类号： H01L21/67 ,  G01J5/02

CPC分类号： H01L21/67248 ,  G01J5/0007 ,  G01J5/0818 ,  H01L21/68742

摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.

摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一个或多个提升销具有设置在其中的光管，用于当提升销接触基板表面时收集由基板发射或传输的辐射。

公开(公告)号：US20220319822A1

公开(公告)日：2022-10-06

申请号：US17848573

申请日：2022-06-24

申请人： Applied Materials, Inc.

发明人： John Joseph MAZZOCCO ,  Anantha K. SUBRAMANI ,  Yang GUO

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/50 ,  C23C14/14 ,  H01J37/32 ,  C23C14/58

摘要： Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.