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8 条记录 (耗时 0.024 秒)

    GAS FLOW SYSTEM
    1.
    发明申请
    GAS FLOW SYSTEM 审中-公开

    公开(公告)号：US20200335310A1

    公开(公告)日：2020-10-22

    申请号：US16838987

    申请日：2020-04-02

    申请人： Applied Materials, Inc.

    发明人： Keith A. MILLER ,  Wei W. WANG ,  Alexander ERENSTEIN ,  John J. MAZZOCCO

    IPC分类号： H01J37/32 ,  C23C14/34 ,  C23C14/50 ,  B25J18/00

    摘要： A gas flow system is provided, including a gas flow source, one or more gas inlets, one or more gas outlets, a gas flow region, a low pressure region, wherein the low pressure region is fluidly coupled to the one or more gas outlets, a high pressure region, and a gap. The one or more gas inlets are fluidly coupleable to the gas flow source. The gas flow region is fluidly coupled to the one or more gas inlets and the one or more gas outlets. The gap fluidly couples the gas flow region to the high pressure region. The high pressure region near the targets allows for process gas interactions with the target to sputter onto the substrate below. The low pressure region near the substrate prevents unwanted chemical interactions between the process gas and the substrate.

    BIPOLAR COLLIMATOR UTILIZED IN A PHYSICAL VAPOR DEPOSITION CHAMBER
    3.
    发明申请
    BIPOLAR COLLIMATOR UTILIZED IN A PHYSICAL VAPOR DEPOSITION CHAMBER 有权
    在物理蒸气沉积室中使用的双极柱

    公开(公告)号：US20150114823A1

    公开(公告)日：2015-04-30

    申请号：US14062627

    申请日：2013-10-24

    申请人： Applied Materials, Inc.

    发明人： Joung Joo LEE ,  Guojun LIU ,  Wei W. WANG ,  Prashanth KOTHNUR

    IPC分类号： H01J37/34 ,  C23C14/34

    CPC分类号： H01J37/3447 ,  C23C14/042 ,  C23C14/22 ,  C23C14/3471 ,  H01J37/3426

    摘要： The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.

    摘要翻译： 本发明提供一种装置，包括设置在物理气相沉积室中的双极准直器及其使用方法。 在一个实施例中，一种装置包括室主体和设置在室主体上的室盖，其限定其中的处理区域，设置在处理区域中的准直器和耦合到准直器的电源。

    SUBSTRATE SUPPORT PEDESTAL
    5.
    发明申请
    SUBSTRATE SUPPORT PEDESTAL 审中-公开

    公开(公告)号：US20200312683A1

    公开(公告)日：2020-10-01

    申请号：US16808107

    申请日：2020-03-03

    申请人： Applied Materials, Inc.

    发明人： Ilya LAVITSKY ,  Keith A. MILLER ,  John J. MAZZOCCO ,  Wei W. WANG

    IPC分类号： H01L21/67 ,  H01L21/687 ,  H01L21/02 ,  C23C14/50

    摘要： A moveable substrate support for use in a processing chamber is provided. The moveable substrate support includes a substrate support surface and a robot, wherein the robot is configured to move the substrate support surface along a movement path. The substrate support includes a halo, and the halo protects the underlying components of the processing chamber from unwanted deposition, while the substrate support surface is moving along the movement path. The substrate support protects processing chamber components from deposition, reducing cleaning time and reducing the need for repairs of the components of the processing chamber.

    IN-SITU TEMPERATURE MEASUREMENT IN A NOISY ENVIRONMENT
    8.
    发明申请
    IN-SITU TEMPERATURE MEASUREMENT IN A NOISY ENVIRONMENT 有权
    噪声环境中的现场温度测量

    公开(公告)号：US20140269826A1

    公开(公告)日：2014-09-18

    申请号：US14189664

    申请日：2014-02-25

    申请人： Applied Materials, Inc.

    发明人： Hanbing WU ,  Anantha K. SUBRAMANI ,  Wei W. WANG ,  Aaron Muir HUNTER

    IPC分类号： H01L21/67 ,  G01J5/02

    CPC分类号： H01L21/67248 ,  G01J5/0007 ,  G01J5/0818 ,  H01L21/68742

    摘要： Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. One or more lift pins has a light pipe disposed therein to collect radiation emitted or transmitted by the substrate when the lift pin contacts the substrate surface.

    摘要翻译： 公开了用于处理基材的方法和装置。 该装置是双功能处理室，其可以在基板上进行材料处理和热处理。 该室具有设置在处理位置和室的输送位置之间的环形辐射源。 提升销具有足够的长度以将衬底保持在处理位置，同时衬底支撑件降低到辐射源平面下方以提供衬底的辐射加热。 一个或多个提升销具有设置在其中的光管，用于当提升销接触基板表面时收集由基板发射或传输的辐射。