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    ALD PROCESS AND HARDWARE WITH IMPROVED PURGE EFFICIENCY
    1.
    发明申请
    ALD PROCESS AND HARDWARE WITH IMPROVED PURGE EFFICIENCY 有权

    公开(公告)号：US20210202234A1

    公开(公告)日：2021-07-01

    申请号：US17182555

    申请日：2021-02-23

    Applicant: Applied Materials, Inc.

    Inventor： Chien-Teh KAO ,  Xiangxin RUI

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44

    Abstract: Embodiments described herein provide a gas supply system for reducing purge time and increasing processing throughput, and an atomic layer deposition (ALD) chamber having the same. The gas supply system includes an inert gas line and a precursor supply line. The inert gas line is configured to be coupled to an inlet of the chamber separate from the precursor supply line. Therefore, the inert gas is supplied concurrently to the precursor supply line and the processing region of the chamber such that total purge time is reduced. The reduction of the total purge time due to the gas supply system increases purge efficiency and increases processing throughput. Furthermore, the gas supply system allows inert gas to be utilized as a dilution gas during flow of precursors.

    REMOTE PLASMA SOURCE CLEANING NOZZLE FOR PLASMA ENHANCED CVD CHAMBERS
    2.
    发明申请
    REMOTE PLASMA SOURCE CLEANING NOZZLE FOR PLASMA ENHANCED CVD CHAMBERS 审中-公开

    公开(公告)号：US20200047222A1

    公开(公告)日：2020-02-13

    申请号：US16102560

    申请日：2018-08-13

    Applicant: Applied Materials, Inc.

    Inventor： Tae Kyung WON ,  Young Dong LEE ,  Chien-Teh KAO ,  Soo Young CHOI ,  Sanjay D. YADAV

    IPC: B08B7/00 ,  C23C16/44 ,  C23C16/452

    Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.

    MULTI-ANTENNA UNIT FOR LARGE AREA INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS
    4.
    发明公开
    MULTI-ANTENNA UNIT FOR LARGE AREA INDUCTIVELY COUPLED PLASMA PROCESSING APPARATUS 审中-公开

    公开(公告)号：US20230162948A1

    公开(公告)日：2023-05-25

    申请号：US17987259

    申请日：2022-11-15

    Applicant: Applied Materials, Inc.

    Inventor： Shouqian SHAO ,  Tae Kyung WON ,  Chien-Teh KAO ,  Jianhua ZHOU

    IPC: H01J37/32

    CPC classification number: H01J37/32119 ,  H01J37/32541

    Abstract: Embodiments of the present disclosure generally relate to a lid suitable for use in a semiconductor processing chamber. The lid includes a plurality of dielectric windows coupled to a perforated faceplate. The lid also includes a plurality of support members coupled to the perforated faceplate and positioned between adjacent dielectric windows. The lid further includes a plurality inductive couplers. One or more of the inductive couplers includes a first lower portion, a second lower portion, and a bridge. The bridge is disposed over at least one of the plurality of support members. The first lower portion is positioned on a first dielectric window of the plurality of dielectric windows. The second lower portion is positioned on a second dielectric window of the plurality of dielectric windows. The second dielectric window is adjacent to the first dielectric window.

    GAS FLOW GUIDE DESIGN FOR UNIFORM FLOW DISTRIBUTION AND EFFICIENT PURGE
    5.
    发明申请
    GAS FLOW GUIDE DESIGN FOR UNIFORM FLOW DISTRIBUTION AND EFFICIENT PURGE 审中-公开

    公开(公告)号：US20200017971A1

    公开(公告)日：2020-01-16

    申请号：US16032854

    申请日：2018-07-11

    Applicant: Applied Materials, Inc.

    Inventor： Chien-Teh KAO ,  Jeffrey A. KHO ,  Xiangxin RUI ,  Jianhua ZHOU ,  Shinichi KURITA ,  Shouqian SHAO ,  Guangwei SUN

    IPC: C23C16/455 ,  C23C16/44

    Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.

    METHODS AND APPARATUS FOR ALD PROCESSES
    9.
    发明申请
    METHODS AND APPARATUS FOR ALD PROCESSES 审中-公开

    公开(公告)号：US20200040455A1

    公开(公告)日：2020-02-06

    申请号：US16517255

    申请日：2019-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Jeffrey A. KHO ,  Chien-Teh KAO ,  Jianhua ZHOU

    IPC: C23C16/455 ,  H01L51/56 ,  C23C16/52

    Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) chamber. In one embodiment, a lid assembly is provided that includes a multi-channel showerhead having a plurality of first gas channels and a plurality of second gas channels that are fluidly isolated from each of the first gas channels, and a flow guide coupled to opposing sides of the multi-channel showerhead, each of the flow guides being fluidly coupled to the plurality of second gas channels.

    SUPPORT ASSEMBLY
    10.
    发明申请
    SUPPORT ASSEMBLY 审中-公开

    公开(公告)号：US20200006054A1

    公开(公告)日：2020-01-02

    申请号：US16567818

    申请日：2019-09-11

    Applicant: Applied Materials, Inc.

    Inventor： Chien-Teh KAO ,  Joel M. HUSTON ,  Mei CHANG ,  Xiaoxiong YUAN

    IPC: H01L21/02 ,  H01L21/67 ,  H01J37/32

    Abstract: A method and apparatus for removing native oxides from a substrate surface is provided. In one aspect, the apparatus comprises a support assembly. In one embodiment, the support assembly includes a shaft coupled to a disk-shaped body. The shaft has a vacuum conduit, a heat transfer fluid conduit and a gas conduit formed therein. The disk-shaped body includes an upper surface, a lower surface and a cylindrical outer surface. A thermocouple is embedded in the disk-shaped body. A flange extends radially outward from the cylindrical outer surface, wherein the lower surface of the disk-shaped body comprises one side of the flange. A fluid channel is formed in the disk-shaped body proximate the flange and lower surface. The fluid channel is coupled to the heat transfer fluid conduit of the shaft. A plurality of grooves are formed in the upper surface of the disk-shaped body, and are coupled by a hole in the disk-shaped body to the vacuum conduit of the shaft. A gas conduit is formed through the disk-shaped body and couples the gas conduit of the shaft to the cylindrical outer surface of the disk-shaped body. The gas conduit in the disk-shaped body has an orientation substantially perpendicular to a centerline of the disk-shaped body.

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