公开(公告)号：US20190153603A1

公开(公告)日：2019-05-23

申请号：US16254295

申请日：2019-01-22

Applicant: Applied Materials, Inc.

Inventor： Sanjay D. YADAV

IPC: C23C16/52 ,  C23C16/46 ,  C23C16/458 ,  C23C16/509 ,  G01J5/08 ,  H01L21/67 ,  G01J5/00

Abstract: Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a lift pin. The lift pin has a body. The body has an interior passage and a rounded top surface configured for contacting a substrate when in use. A substrate temperature sensor disposed in the interior passage.

公开(公告)号：US20210280392A1

公开(公告)日：2021-09-09

申请号：US17328509

申请日：2021-05-24

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh KAO ,  Tae Kyung WON ,  Carl A. SORENSEN ,  Sanjay D. YADAV ,  Young Dong LEE ,  Shinichi KURITA ,  Soo Young CHOI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

公开(公告)号：US20180331328A1

公开(公告)日：2018-11-15

申请号：US15613667

申请日：2017-06-05

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Soo Young CHOI ,  Sanjay D. YADAV ,  Carl A. SORENSEN ,  Chien-Teh KAO ,  Suhail ANWAR ,  Young Dong LEE

IPC: H01L51/56 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L51/56 ,  H01L51/0035 ,  H01L51/0097 ,  H01L51/5203 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5338

Abstract: Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.

公开(公告)号：US20210210737A1

公开(公告)日：2021-07-08

申请号：US17212920

申请日：2021-03-25

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Soo Young CHOI ,  Sanjay D. YADAV

IPC: H01L51/56 ,  C23C16/34 ,  C23C16/505 ,  H01L51/52

Abstract: A method of encapsulating an organic light emitting diode (OLED) is provided. The method includes generating a first plasma in a process chamber, the first plasma having an electron density of at least 1011 cm−3 when an OLED device is positioned within the process chamber. The OLED device includes a substrate and an OLED formed on the substrate. The method further includes pretreating one or more surfaces of the OLED and substrate with the first plasma; depositing a first barrier layer comprising silicon and nitrogen over the OLED by generating a second plasma comprising silicon and nitrogen in the process chamber, the second plasma having an electron density of at least 1011 cm−3, and depositing a buffer layer over the first barrier layer; and depositing a second barrier layer comprising silicon and nitrogen over the buffer layer by generating a third plasma comprising silicon and nitrogen in the process chamber.

公开(公告)号：US20170362712A1

公开(公告)日：2017-12-21

申请号：US15188693

申请日：2016-06-21

Applicant: Applied Materials, Inc.

Inventor： Sanjay D. YADAV ,  Shreesha Y. RAO ,  Tae Kyung WON ,  Umesha ACHARY ,  Himanshu JOSHI

IPC: C23C16/52 ,  C23C16/50 ,  G01J5/08 ,  C23C16/458 ,  G01J5/00

CPC classification number: C23C16/52 ,  C23C14/541 ,  C23C16/4583 ,  C23C16/463 ,  C23C16/5096 ,  G01J5/0007 ,  G01J5/041 ,  G01J5/0806 ,  G01J2005/0081 ,  H01L21/67248

Abstract: Embodiments disclosed herein generally relate to a substrate temperature monitoring system in a substrate support assembly. In one embodiment, the substrate support assembly includes a support plate and a substrate temperature monitoring system. The support plate has a top surface configured to support a substrate. The substrate temperature monitoring system is disposed in the substrate support plate. The substrate temperature monitoring system is configured to measure a temperature of the substrate from a bottom surface of the substrate. The substrate temperature monitoring system includes a window, a body, and a temperature sensor. The window is integrally formed in a top surface of the support plate. The body is embedded in the support plate, through the bottom surface. The body defines an interior passage. The temperature sensor is disposed in the interior passage beneath the window. The temperature sensor is configured to measure the temperature of the substrate.

公开(公告)号：US20150211120A1

公开(公告)日：2015-07-30

申请号：US14610489

申请日：2015-01-30

Applicant: Applied Materials, Inc.

Inventor： Lai ZHAO ,  Gaku FURUTA ,  Qunhua WANG ,  Robin L. TINER ,  Beom Soo PARK ,  Soo Young CHOI ,  Sanjay D. YADAV

IPC: C23C16/455 ,  H01J37/32

Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

Abstract translation: 本发明涉及一种设计用于通过改变气体流量来降低基板拐角区域的高沉积速率的拐角扰流板。 在一个实施例中，用于处理室的拐角扰流板包括由介电材料制成的L形主体，其中L形主体被配置为改变处理室中的基板的拐角处的等离子体分布。 L形本体包括第一和第二腿，其中第一和第二腿在L形体的内角处相交。 第一腿或第二腿的长度是在第一腿或第二腿与内角之间限定的距离的两倍。 在另一个实施例中，用于沉积室的阴影框架包括具有矩形开口的矩形体，以及在矩形体的角落处联接到矩形体的一个或多个拐角扰流板。

公开(公告)号：US20220122876A1

公开(公告)日：2022-04-21

申请号：US17423689

申请日：2020-01-17

Applicant: Applied Materials, Inc.

Inventor： Jrjyan Jerry CHEN ,  Sanjay D. YADAV ,  Tae Kyung WON ,  Jun LI ,  Shouqian SHAO ,  Surendra Kanimihally SETTY

IPC: H01L21/683 ,  H01L21/687 ,  H01J37/32 ,  C23C16/50 ,  C23C16/458 ,  C23C16/04

Abstract: Embodiments of the disclosure include methods and apparatus for electrostatically coupling a mask to a substrate support in a deposition chamber. In one embodiment, a substrate support is disclosed that includes a substrate receiving surface, a recessed portion disposed about a periphery of the substrate receiving surface, an electrostatic chuck disposed below the substrate receiving surface, and a plurality of compressible buttons disposed within a respective opening formed in the recessed portion that form an electrical circuit with the electrostatic chuck.

公开(公告)号：US20200047222A1

公开(公告)日：2020-02-13

申请号：US16102560

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Young Dong LEE ,  Chien-Teh KAO ,  Soo Young CHOI ,  Sanjay D. YADAV

IPC: B08B7/00 ,  C23C16/44 ,  C23C16/452

Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.

公开(公告)号：US20180340257A1

公开(公告)日：2018-11-29

申请号：US15644191

申请日：2017-07-07

Applicant: Applied Materials, Inc.

Inventor： Umesha ACHARY ,  Sanjay D. YADAV ,  Lai ZHAO ,  Gaku FURUTA ,  Ko-Ta SHIH ,  Soo Young CHOI

IPC: C23C16/50 ,  C23C16/458 ,  C23C16/455

Abstract: Embodiments described herein relate to a plasma enhanced chemical vapor deposition (PECVD) chamber and diffuser assembly for processing large area flat panel display substrates. The diffuser includes a first plate having a plurality of first bores formed therein, a second plate having a second plurality of bores formed therein, and a third plate having a third plurality of bores formed therein. The second plate is disposed between the first plate and the second plate. The first plate, second plate, and third plate are brazed to form a diffuser having a unitary body.

公开(公告)号：US20240105427A1

公开(公告)日：2024-03-28

申请号：US18528476

申请日：2023-12-04

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh KAO ,  Tae Kyung WON ,  Carl A. SORENSEN ,  Sanjay D. YADAV ,  Young Dong LEE ,  Shinichi KURITA ,  Soo Young CHOI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  H01L21/683

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32458 ,  H01J37/32715 ,  H01L21/02274 ,  H01L21/6833 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.