公开(公告)号：US20200047222A1

公开(公告)日：2020-02-13

申请号：US16102560

申请日：2018-08-13

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Young Dong LEE ,  Chien-Teh KAO ,  Soo Young CHOI ,  Sanjay D. YADAV

IPC: B08B7/00 ,  C23C16/44 ,  C23C16/452

Abstract: The present disclosure relates to a chemical vapor deposition system for processing large area substrates. The chemical vapor deposition system includes a chemical vapor deposition chamber comprising a chamber body having a plurality of sidewalls, a lid assembly, and a bottom. A substrate support extends upward from the bottom within the chamber body. A gas distribution plate is located within the lid assembly. One or more cleaning gas injector ports coupled to corresponding one or more inlets in the plurality of sidewalls. Each of the one or more cleaning gas injector ports has a substantially oval-shaped or circular-shaped cleaning gas nozzle configured to provide reactive species from a remote plasma source to clean an underside of the gas distribution plate.

公开(公告)号：US20240105427A1

公开(公告)日：2024-03-28

申请号：US18528476

申请日：2023-12-04

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh KAO ,  Tae Kyung WON ,  Carl A. SORENSEN ,  Sanjay D. YADAV ,  Young Dong LEE ,  Shinichi KURITA ,  Soo Young CHOI

IPC: H01J37/32 ,  C23C16/455 ,  C23C16/52 ,  H01L21/02 ,  H01L21/683

CPC classification number: H01J37/32449 ,  C23C16/45565 ,  C23C16/52 ,  H01J37/321 ,  H01J37/32174 ,  H01J37/32458 ,  H01J37/32715 ,  H01L21/02274 ,  H01L21/6833 ,  H01J2237/3321

Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

公开(公告)号：US20240047291A1

公开(公告)日：2024-02-08

申请号：US17641365

申请日：2019-09-10

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Soo Young CHOI ,  Dong Kil YIM ,  Young Dong LEE ,  Zongkai WU ,  Sanjay D. YADAV

IPC: H01L23/31 ,  H01L23/29 ,  H01L21/56 ,  H01L21/02 ,  H01L33/00 ,  H01L33/56 ,  H01L21/285

CPC classification number: H01L23/3192 ,  H01L23/291 ,  H01L21/56 ,  H01L21/02274 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/0214 ,  H01L33/0095 ,  H01L33/56 ,  H01L21/285

Abstract: Embodiments of the present disclosure generally relate to moisture barrier films utilized in an organic light emitting diode device. A moisture barrier film is deposited in a high density plasma chemical vapor deposition chamber at a temperature of less than about 250 degrees Celsius, an inductively coupled plasma power frequency of about 2 MHz to about 13.56 MHz or a microwave power frequency of about 2.45 GHz, and a plasma density of about 1011 cm3 to about 1012 cm3. The moisture barrier film comprises a material selected from the group consisting of silicon oxynitride, silicon nitride, and silicon oxide. The moisture barrier film has a thickness of less than about 3,000 Angstroms, a refractive index between about 1.45 and 1.95, and an absorption coefficient of about zero at UV wavelengths. The moisture barrier film may be utilized in a thin film encapsulation structure or a thin film transistor.

公开(公告)号：US20240087847A1

公开(公告)日：2024-03-14

申请号：US17941639

申请日：2022-09-09

Applicant: Applied Materials, Inc.

Inventor： Zheng John YE ,  Jeevan Prakash SEQUEIRA ,  Chien-Teh KAO ,  Tae Kyung WON ,  Young Dong LEE ,  Soo Young CHOI ,  Suhail ANWAR ,  Jianhua ZHOU

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/52

CPC classification number: H01J37/3211 ,  C23C16/505 ,  C23C16/52 ,  H01J37/32119 ,  H01J37/32183 ,  H01J2237/3321

Abstract: The present disclosure is directed to an antenna array. The antenna array includes a plurality of dielectric windows coupled to a support structure comprising a plurality of gas ports, a primary frame comprising a primary conduit connected to a power source and a plurality of secondary frames supported by the primary frame. The secondary frame includes a secondary conduit connected to the primary conduit. A plurality of inductive couplers are disposed over the plurality of dielectric windows and supported by the secondary frames. The plurality of inductive couplers include a plurality of antenna connectors and a plurality of plurality of antennas. The plurality of antenna connectors connect the plurality of antennas to the secondary conduit.

公开(公告)号：US20210280392A1

公开(公告)日：2021-09-09

申请号：US17328509

申请日：2021-05-24

Applicant: Applied Materials, Inc.

Inventor： Chien-Teh KAO ,  Tae Kyung WON ,  Carl A. SORENSEN ,  Sanjay D. YADAV ,  Young Dong LEE ,  Shinichi KURITA ,  Soo Young CHOI

IPC: H01J37/32 ,  H01L21/683 ,  H01L21/02 ,  C23C16/455 ,  C23C16/52

Abstract: Embodiments of the present disclosure include methods and apparatus for depositing a plurality of layers on a large area substrate. In one embodiment, a processing chamber for plasma deposition is provided. The processing chamber includes a showerhead and a substrate support assembly. The showerhead is coupled to an RF power source and a ground and includes a plurality of perforated gas diffusion members. A plurality of plasma applicators is disposed within the showerhead, wherein one plasma applicator of the plurality of plasma applicators corresponds to one of the plurality of perforated gas diffusion members. Further, a DC bias power source is coupled to a substrate support assembly.

公开(公告)号：US20180331328A1

公开(公告)日：2018-11-15

申请号：US15613667

申请日：2017-06-05

Applicant: Applied Materials, Inc.

Inventor： Tae Kyung WON ,  Soo Young CHOI ,  Sanjay D. YADAV ,  Carl A. SORENSEN ,  Chien-Teh KAO ,  Suhail ANWAR ,  Young Dong LEE

IPC: H01L51/56 ,  H01L51/52 ,  H01L51/00

CPC classification number: H01L51/56 ,  H01L51/0035 ,  H01L51/0097 ,  H01L51/5203 ,  H01L51/5253 ,  H01L2251/301 ,  H01L2251/303 ,  H01L2251/5338

Abstract: Embodiments of the present disclosure generally describe a method for depositing a barrier layer of SiN using a high density plasma chemical vapor deposition (HDP-CVD) process, and in particular, controlling a film stress of the deposited SiN layer by biasing the substrate during the deposition process.