METHOD AND SOLUTION FOR RESOLVING CGT MURA ISSUE

    公开(公告)号:US20190382891A1

    公开(公告)日:2019-12-19

    申请号:US16011381

    申请日:2018-06-18

    Abstract: Embodiments described herein provide an apparatus for providing an inductance at positions that correspond to positions of substrate support pins. The apparatus includes one or more substrate support pins. Each substrate support pin includes a head portion, a first portion, and a second portion. The second portion is an inductor that provides inductance at positions of substrate support pins. The inductance provided by the second portion of the substrate support pin changes the impedance to match the impedance at areas of the substrate support without the substrate support pins. With matched impedance, the plasma density over the areas of the substrate support with the support pins and without the support pins is uniform, leading to improved film thickness uniformity. The uniform film thickness thus reduces or eliminates clouding or the “mura effect”.

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