知搜-全球专利检索

  1. Login
  2. Sign Up

Search Results

13 records (took 0.017 seconds)

    NITROGEN-RICH SILICON NITRIDE FILMS FOR THIN FILM TRANSISTORS
    2.
    发明申请
    NITROGEN-RICH SILICON NITRIDE FILMS FOR THIN FILM TRANSISTORS 有权

    公开(公告)号：US20210287955A1

    公开(公告)日：2021-09-16

    申请号：US17338239

    申请日：2021-06-03

    Applicant: Applied Materials, Inc.

    Inventor： Rodney S. LIM ,  Jung Bae KIM ,  Jiarui WANG ,  Yi CUI ,  Dong Kil YIM ,  Soo Young CHOI

    IPC: H01L23/31 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

    Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.

    NITROGEN-RICH SILICON NITRIDE FILMS FOR THIN FILM TRANSISTORS
    5.
    发明申请
    NITROGEN-RICH SILICON NITRIDE FILMS FOR THIN FILM TRANSISTORS 有权

    公开(公告)号：US20210066153A1

    公开(公告)日：2021-03-04

    申请号：US16557102

    申请日：2019-08-30

    Applicant: Applied Materials, Inc.

    Inventor： Rodney S. LIM ,  Jung Bae KIM ,  Jiarui WANG ,  Yi CUI ,  Dong Kil YIM ,  Soo Young CHOI

    IPC: H01L23/31 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

    Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 at % to about 35 at %, a nitrogen concentration of about 40 at % to about 75 at %, and a hydrogen concentration of about 10 at % to about 35 at %. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.

    HEATED BACKING PLATE
    6.
    发明申请
    HEATED BACKING PLATE 审中-公开
    加热背板

    公开(公告)号：US20140174361A1

    公开(公告)日：2014-06-26

    申请号：US14061831

    申请日：2013-10-24

    Applicant: Applied Materials, Inc.

    Inventor： Jrjyan Jerry CHEN ,  Soo Young CHOI ,  Young Jin CHOI ,  Yi CUI ,  Beom Soo PARK ,  Robin L. TINER

    IPC: C23C16/44

    CPC classification number: C23C16/4401 ,  C23C16/45565 ,  C23C16/4557

    Abstract: The present invention generally relates to a heated backing plate coupled to a gas distribution showerhead in a PECVD chamber. The backing plate is heated by circulating a heating fluid either through channels formed within the backing plate or a tube coupled to the backing plate. A heated backing plate heats up the gas distribution showerhead, which improves the cleaning rate of the PECVD chamber that performs low temperature processes.

    Abstract translation: 本发明一般涉及一种联接到PECVD室中的气体分配喷头的加热背板。 通过循环加热流体来加热背板，通过形成在背板内的通道或耦合到背板的管。 加热的背板加热气体分配喷头，这提高了执行低温过程的PECVD室的清洁率。

    SiON GRADIENT CONCEPT
    9.
    发明申请
    SiON GRADIENT CONCEPT 有权
    SiON梯度概念

    公开(公告)号：US20170012064A1

    公开(公告)日：2017-01-12

    申请号：US15202070

    申请日：2016-07-05

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  Tae Kyung WON ,  Dong-Kil YIM ,  Yi CUI ,  Xuena ZHANG

    IPC: H01L27/12

    CPC classification number: H01L27/1248 ,  H01L27/3262

    Abstract: Embodiments of the present disclosure generally relate to methods and devices for use of low temperature polysilicon (LTPS) thin film transistors in liquid crystal display (LCD) and organic light-emitting diode (OLED) displays.

    Abstract translation: 本公开的实施例一般涉及在液晶显示器（LCD）和有机发光二极管（OLED）显示器中使用低温多晶硅（LTPS）薄膜晶体管的方法和装置。

Patent Agency Ranking