公开(公告)号：US20170229490A1

公开(公告)日：2017-08-10

申请号：US15411724

申请日：2017-01-20

Applicant: Applied Materials, Inc.

Inventor： Xuena ZHANG ,  Dong-Kil YIM ,  Wenqing DAI ,  Harvey YOU ,  Tae Kyung WON ,  Hsiao-Lin YANG ,  Wan-Yu LIN ,  Yun-chu TSAI

IPC: H01L27/12 ,  H01L21/02 ,  H01L49/02

CPC classification number: H01L29/4908 ,  G02F1/136213 ,  G02F1/1368 ,  H01L21/02148 ,  H01L21/02159 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02274 ,  H01L21/0228 ,  H01L27/1222 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/1259 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3265 ,  H01L28/40 ,  H01L28/60 ,  H01L2227/323

Abstract: Embodiments of the disclosure generally provide methods of forming a capacitor with high capacitance and low leakage as well as a good interface control for thin film transistor (TFT) applications. In one embodiment, a thin film transistor structure includes a capacitor formed in a thin film transistor device. The capacitor further includes a common electrode disposed on a substrate, a dielectric layer formed on the common electrode and a pixel electrode formed on the dielectric layer. An interface protection layer formed between the common electrode and the dielectric layer, or between the dielectric layer and the pixel electrode. A gate insulating layer fabricated by a high-k material may also be utilized in the thin film transistor structure.

公开(公告)号：US20170012064A1

公开(公告)日：2017-01-12

申请号：US15202070

申请日：2016-07-05

Applicant: Applied Materials, Inc.

Inventor： Soo Young CHOI ,  Tae Kyung WON ,  Dong-Kil YIM ,  Yi CUI ,  Xuena ZHANG

IPC: H01L27/12

CPC classification number: H01L27/1248 ,  H01L27/3262

Abstract: Embodiments of the present disclosure generally relate to methods and devices for use of low temperature polysilicon (LTPS) thin film transistors in liquid crystal display (LCD) and organic light-emitting diode (OLED) displays.

Abstract translation: 本公开的实施例一般涉及在液晶显示器（LCD）和有机发光二极管（OLED）显示器中使用低温多晶硅（LTPS）薄膜晶体管的方法和装置。

公开(公告)号：US20170207327A1

公开(公告)日：2017-07-20

申请号：US15359325

申请日：2016-11-22

Applicant: Applied Materials, Inc.

Inventor： Hao-Chien HSU ,  Dong-kil YIM ,  Tae Kyung WON ,  Xuena ZHANG ,  Won Ho SUNG ,  Rodney Shunleong LIM

IPC: H01L29/66 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/02581 ,  H01L21/02631 ,  H01L21/02664 ,  H01L29/7869

Abstract: Embodiments of the present disclosure generally relate to methods for forming a TFT having a metal oxide layer. The method may include forming a metal oxide layer and treating the metal oxide layer with a fluorine containing gas or plasma. The fluorine treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.

公开(公告)号：US20170125606A1

公开(公告)日：2017-05-04

申请号：US15278510

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Peter NUNAN ,  Xuena ZHANG

IPC: H01L29/786 ,  H01L21/268 ,  H01L21/324 ,  H01L21/266 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L27/1229 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

Abstract: The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer.