公开(公告)号：US20230133404A1

公开(公告)日：2023-05-04

申请号：US17906454

申请日：2020-04-17

Applicant: Applied Materials, Inc.

Inventor： Bernhard G. MUELLER ,  Peter NUNAN

IPC: G01N23/2251

Abstract: A method for inspecting a sample with a multi-electron beam inspection system (100) is described. The method includes: placing the sample on a movable stage (110) extending in an X-Y-plane; generating a plurality of electron beams (105) propagating toward the sample; focusing the plurality of electron beams on the sample at a plurality of probe positions (106) in a two-dimensional array; scanning the sample surface by moving the movable stage in a predetermined scanning pattern while maintaining the plurality of electron beams stationary; and detecting signal electrons emitted from the sample during the movement of the movable stage for inspecting the sample. Further, a multi-electron beam inspection system (100) for inspecting a sample according to the above method is described.

公开(公告)号：US20170125606A1

公开(公告)日：2017-05-04

申请号：US15278510

申请日：2016-09-28

Applicant: Applied Materials, Inc.

Inventor： Peter NUNAN ,  Xuena ZHANG

IPC: H01L29/786 ,  H01L21/268 ,  H01L21/324 ,  H01L21/266 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/266 ,  H01L21/268 ,  H01L21/324 ,  H01L27/1229 ,  H01L27/127 ,  H01L29/66765 ,  H01L29/78669 ,  H01L29/78678

Abstract: The present disclosure generally relates to an improved large area substrate thin film transistor device, and method of fabrication thereof. More specifically, amorphous and LTPS transistors are formed by first forming an amorphous silicon layer, annealing the amorphous silicon layer to form polycrystalline silicon, depositing a masking layer over a first portion of the polycrystalline silicon layer, implanting a second portion of the polycrystalline silicon layer with an amorphizing species, and removing the masking layer.