公开(公告)号：US20180076032A1

公开(公告)日：2018-03-15

申请号：US15695180

申请日：2017-09-05

Applicant: Applied Materials, Inc.

Inventor： Jiarui WANG ,  Prashant Kumar KULSHRESHTHA ,  Eswaranand VENKATASUBRAMANIAN ,  Susmit Singha ROY ,  Kwangduk Douglas LEE

IPC: H01L21/033 ,  H01L21/02 ,  H01L27/11556 ,  H01L27/11582 ,  C23C16/50 ,  C23C16/40 ,  C23C16/34

CPC classification number: H01L21/0332 ,  C23C16/0272 ,  C23C16/06 ,  C23C16/342 ,  C23C16/345 ,  C23C16/401 ,  C23C16/45523 ,  C23C16/50 ,  C23C16/505 ,  C23C16/52 ,  H01L21/02112 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02175 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/02304 ,  H01L21/0337 ,  H01L21/31144 ,  H01L21/67103 ,  H01L21/6831 ,  H01L27/11548 ,  H01L27/11556 ,  H01L27/11575 ,  H01L27/11582

Abstract: Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of thick hardmask films on a substrate. In one implementation, a method of forming a hardmask layer on a substrate is provided. The method comprises applying a chucking voltage to a substrate positioned on an electrostatic chuck in a processing chamber, forming a seed layer comprising boron on a film stack disposed on a substrate by supplying a seed layer gas mixture in the processing chamber while maintaining the chucking voltage, forming a transition layer comprising boron and tungsten on the seed layer by supplying a transition layer gas mixture in the processing chamber and forming a bulk hardmask layer on the transition layer by supplying a main deposition gas mixture in the processing chamber.

公开(公告)号：US20210287955A1

公开(公告)日：2021-09-16

申请号：US17338239

申请日：2021-06-03

Applicant: Applied Materials, Inc.

Inventor： Rodney S. LIM ,  Jung Bae KIM ,  Jiarui WANG ,  Yi CUI ,  Dong Kil YIM ,  Soo Young CHOI

IPC: H01L23/31 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, methods for depositing silicon nitride materials are provided and include heating a workpiece to a temperature of about 200° C. to about 250° C., exposing the workpiece to a deposition gas during a plasma-enhanced chemical vapor deposition process, and depositing a nitrogen-rich silicon nitride layer on the workpiece. The deposition gas contains a silicon precursor, a nitrogen precursor, and a carrier gas. A molar ratio of the silicon precursor to the nitrogen precursor to the carrier gas within the deposition gas is about 1:a range from about 4 to about 8:a range from about 20 to about 80, respectively.

公开(公告)号：US20230274997A1

公开(公告)日：2023-08-31

申请号：US18195196

申请日：2023-05-09

Applicant: Applied Materials, Inc.

Inventor： Rodney S. LIM ,  Jung Bae KIM ,  Jiarui WANG ,  Yi CUI ,  Dong Kil YIM ,  Soo Young CHOI

IPC: H01L23/31 ,  H01L27/12 ,  H01L21/02 ,  H01L29/786

CPC classification number: H01L23/3192 ,  H01L27/1248 ,  H01L21/02211 ,  H01L21/0217 ,  H01L21/02274 ,  H01L29/786

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack is provided and includes a silicon oxide layer disposed on a workpiece, a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer, and a hydrogen-rich silicon nitride layer disposed on the nitrogen-rich silicon nitride layer. The hydrogen-rich silicon nitride layer has a greater hydrogen concentration than the nitrogen-rich silicon nitride layer.

公开(公告)号：US20210066153A1

公开(公告)日：2021-03-04

申请号：US16557102

申请日：2019-08-30

Applicant: Applied Materials, Inc.

Inventor： Rodney S. LIM ,  Jung Bae KIM ,  Jiarui WANG ,  Yi CUI ,  Dong Kil YIM ,  Soo Young CHOI

IPC: H01L23/31 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02

Abstract: Embodiments of the present disclosure generally relate to nitrogen-rich silicon nitride and methods for depositing the same, and transistors and other devices containing the same. In one or more embodiments, a passivation film stack contains a silicon oxide layer disposed on a workpiece and a nitrogen-rich silicon nitride layer disposed on the silicon oxide layer. The nitrogen-rich silicon nitride layer has a silicon concentration of about 20 at % to about 35 at %, a nitrogen concentration of about 40 at % to about 75 at %, and a hydrogen concentration of about 10 at % to about 35 at %. In one or more examples, the passivation film stack contains the silicon oxide layer, the nitrogen-rich silicon nitride layer, and a third layer containing any type of silicon nitride, such as nitrogen-rich silicon nitride and/or hydrogen-rich silicon nitride.

公开(公告)号：US20190096624A1

公开(公告)日：2019-03-28

申请号：US16122003

申请日：2018-09-05

Applicant: Applied Materials, Inc.

Inventor： Gaku FURUTA ,  Soo Young CHOI ,  Yi CUI ,  Robin L. TINER ,  Jinhyun CHO ,  Jiarui WANG ,  Suhail ANWAR

IPC: H01J29/07 ,  C23C16/458 ,  C23C16/04 ,  H01J37/32

Abstract: Embodiments of the present disclosure generally relates a shadow frame including two opposing major side frame members adjacent to two opposing minor side frame members coupled together with a corner bracket, wherein the corner bracket includes a corner inlay having legs that extend in directions generally orthogonal to each other.

公开(公告)号：US20180330951A1

公开(公告)日：2018-11-15

申请号：US15977388

申请日：2018-05-11

Applicant: Applied Materials, Inc.

Inventor： Prashant Kumar KULSHRESHTHA ,  Jiarui WANG ,  Kwangduk Douglas LEE ,  Milind GADRE ,  Xiaoquan MIN ,  Paul CONNORS

IPC: H01L21/225 ,  G03F1/38

Abstract: Embodiments of the present disclosure generally relate to methods and apparatus for depositing metal silicide layers on substrates and chamber components. In one embodiment, a method of forming a hardmask includes positioning the substrate having a target layer within a processing chamber, forming a seed layer comprising metal silicide on the target layer and depositing a tungsten-based bulk layer on the seed layer, wherein the metal silicide layer and the tungsten-based bulk layer form the hardmask. In another embodiment, a method of conditioning the components of a plasma processing chamber includes flowing an inert gas comprising argon or helium from a gas applicator into the plasma processing chamber, exposing a substrate support to a plasma within the plasma processing chamber and forming a seasoning layer including metal silicide on an aluminum-based surface of the substrate support.