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    GROUND RETURN FOR PLASMA PROCESSES
    2.
    发明申请
    GROUND RETURN FOR PLASMA PROCESSES 审中-公开
    等离子体工艺的接地返回

    公开(公告)号：US20160305025A1

    公开(公告)日：2016-10-20

    申请号：US15196751

    申请日：2016-06-29

    Applicant: Applied Materials, Inc.

    Inventor： Soo Young CHOI ,  Robin L. TINER ,  Shinichi KURITA ,  John M. WHITE ,  Carl A. SORENSEN ,  Jeffrey A. KHO ,  Suhail ANWAR ,  Makoto INAGAWA ,  Gaku FURUTA

    IPC: C23C16/509

    CPC classification number: C23C16/5096 ,  C23C16/4585 ,  H01J37/32091 ,  H01J37/32174 ,  H01J37/32568 ,  H01L21/67069

    Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

    Abstract translation: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。 该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和 电极或其组合。

    TIGHTLY FITTED CERAMIC INSULATOR ON LARGE AREA ELECTRODE
    3.
    发明申请
    TIGHTLY FITTED CERAMIC INSULATOR ON LARGE AREA ELECTRODE 有权
    在大面积电极上贴合陶瓷绝缘子

    公开(公告)号：US20150273490A1

    公开(公告)日：2015-10-01

    申请号：US14726067

    申请日：2015-05-29

    Applicant: Applied Materials, Inc.

    Inventor： Jozef KUDELA ,  Jonghoon BAEK ,  John M. WHITE ,  Robin TINER ,  Suhail ANWAR ,  Gaku FURUTA

    IPC: B05B1/18

    CPC classification number: B05B1/185 ,  C23C16/45565 ,  C23C16/509 ,  C23C16/5096 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32623 ,  H01J37/32651 ,  Y10T137/6851

    Abstract: Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

    Abstract translation: 本发明的实施例通常包括用于喷头组件的屏蔽框架组件和具有屏蔽框架组件的喷头组件，所述屏蔽框架组件包括紧密配合在真空处理室中的喷头周边周围的绝缘体。 在一个实施例中，喷头组件包括气体分配板和环绕气体分布板的周边边缘的多片框架组件。 多件式框架组件允许气体分配板的膨胀而不产生可能导致电弧的间隙。 在其它实施例中，绝缘体被定位成具有集中在位于其中的气体分配板的周边的电场，从而减少电弧电势。

    RUN-TO-RUN STABILITY OF FILM DEPOSITION
    4.
    发明申请
    RUN-TO-RUN STABILITY OF FILM DEPOSITION 有权
    电泳沉积的运行稳定性

    公开(公告)号：US20150270107A1

    公开(公告)日：2015-09-24

    申请号：US14221421

    申请日：2014-03-21

    Applicant: Applied Materials, Inc.

    Inventor： Lai ZHAO ,  Gaku FURUTA ,  Qunhua WANG ,  Soo Young CHOI

    IPC: H01J37/32 ,  H01L21/02

    CPC classification number: H01L21/02211 ,  C23C16/402 ,  C23C16/4404 ,  H01J37/32853 ,  H01J37/32862 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02301 ,  H01L29/4908 ,  H01L29/7869

    Abstract: A method of depositing a film that includes heterogeneously seasoning a processing chamber is provided. After a processing chamber is cleaned, a substrate may be positioned therein. A film, such as a SiOx film, may then be deposited on the substrate. The substrate may then be removed from the processing chamber and replaced with a second substrate. A film may then be deposited on the second substrate. The substrate positioning, deposition, and substrate removal cycle may be repeated until the cleaning cycle is complete. The processing chamber may be cleaned a second time, and another series of substrates may be similarly processed.

    Abstract translation: 提供了一种沉积包括不均匀调味处理室的膜的方法。 在处理室被清洁之后，可以在其中定位衬底。 然后可以将诸如SiOx膜的膜沉积在基底上。 然后可以将基板从处理室移除并用第二基板代替。 然后可以在第二基板上沉积膜。 可以重复衬底定位，沉积和衬底去除循环，直到清洁循环完成。 可以第二次清洁处理室，并且可以类似地处理另一系列的基板。

    A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY
    7.
    发明申请
    A-SI SEASONING EFFECT TO IMPROVE SIN RUN-TO-RUN UNIFORMITY 有权
    A-SI季节效应提高了单机运行的均匀性

    公开(公告)号：US20150179426A1

    公开(公告)日：2015-06-25

    申请号：US14638877

    申请日：2015-03-04

    Applicant: Applied Materials, Inc.

    Inventor： Gaku FURUTA ,  Soo Young CHOI ,  Beom Soo PARK ,  Young-jin CHOI ,  Omori KENJI

    IPC: H01L21/02

    CPC classification number: H01L21/0217 ,  C23C16/345 ,  C23C16/4404 ,  H01L21/02274 ,  H01L21/02299

    Abstract: Embodiments of the present invention provide methods for depositing a nitrogen-containing material on large-sized substrates disposed in a processing chamber. In one embodiment, a method includes processing a batch of substrates within a processing chamber to deposit a nitrogen-containing material on a substrate from the batch of substrates, and performing a seasoning process at predetermined intervals during processing the batch of substrates to deposit a conductive seasoning layer over a surface of a chamber component disposed in the processing chamber. The chamber component may include a gas distribution plate fabricated from a bare aluminum without anodizing. In one example, the conductive seasoning layer may include amorphous silicon, doped amorphous silicon, doped silicon, doped polysilicon, doped silicon carbide, or the like.

    Abstract translation: 本发明的实施方案提供了在设置在处理室中的大尺寸基板上沉积含氮材料的方法。 在一个实施方案中，一种方法包括处理处理室内的一批衬底，以将一批含有底物的含氮材料从该批衬底上沉积，并在处理该批衬底期间以预定间隔进行调味过程以沉积导电 在处理室中设置的腔室部件的表面上的调味层。 腔室部件可以包括由裸铝制成而不阳极氧化的气体分配板。 在一个示例中，导电调味层可以包括非晶硅，掺杂非晶硅，掺杂硅，掺杂多晶硅，掺杂碳化硅等。

    LOW TEMPERATURE MULTILAYER DIELECTRIC FILM FOR PASSIVATION AND CAPACITOR
    9.
    发明申请
    LOW TEMPERATURE MULTILAYER DIELECTRIC FILM FOR PASSIVATION AND CAPACITOR 有权
    低温多层电介质薄膜，用于钝化和电容

    公开(公告)号：US20160240312A1

    公开(公告)日：2016-08-18

    申请号：US14970228

    申请日：2015-12-15

    Applicant: Applied Materials, Inc.

    Inventor： Dapeng WANG ,  Yixuan WU ,  Gaku FURUTA ,  Tae Kyung WON ,  Beom Soo PARK

    IPC: H01G4/06 ,  H05K1/18 ,  H05K5/00 ,  H01G4/30 ,  H01G4/012

    CPC classification number: H01G4/06 ,  H01G4/012 ,  H01G4/085 ,  H01G4/30 ,  H05K1/162 ,  H05K2201/0195

    Abstract: The present disclosure generally relates to capacitors having a multilayer dielectric material between two electrodes. The multilayer dielectric material can have a small thickness with little to no breakdown strength reduction. By utilizing a multilayer dielectric structure in a capacitor, not only can the breakdown strength remain at an acceptable level, but the collective thickness of the capacitor may be reduced to accommodate the higher density pixels for display devices or any device that utilizes a capacitor.

    Abstract translation: 本发明一般涉及在两个电极之间具有多层电介质材料的电容器。 多层电介质材料可以具有很小的厚度，几乎没有甚至没有击穿强度的降低。 通过在电容器中利用多层电介质结构，不仅可以将击穿强度保持在可接受的水平，而且还可以减小电容器的总体厚度以适应显示装置或使用电容器的任何器件的较高密度像素。

    CORNER SPOILER FOR IMPROVING PROFILE UNIFORMITY
    10.
    发明申请
    CORNER SPOILER FOR IMPROVING PROFILE UNIFORMITY 审中-公开
    用于改善轮廓均匀性的角撑板

    公开(公告)号：US20150211120A1

    公开(公告)日：2015-07-30

    申请号：US14610489

    申请日：2015-01-30

    Applicant: Applied Materials, Inc.

    Inventor： Lai ZHAO ,  Gaku FURUTA ,  Qunhua WANG ,  Robin L. TINER ,  Beom Soo PARK ,  Soo Young CHOI ,  Sanjay D. YADAV

    IPC: C23C16/455 ,  H01J37/32

    Abstract: The present disclosure relates to a corner spoiler designed to decrease high deposition rates on corner regions of substrates by changing the gas flow. In one embodiment, a corner spoiler for a processing chamber includes an L-shaped body fabricated from a dielectric material, wherein the L-shaped body is configured to change plasma distribution at a corner of a substrate in the processing chamber. The L-shaped body includes a first and second leg, wherein the first and second legs meet at an inside corner of the L-shaped body. The length of the first or second leg is twice the distance defined between the first or second leg and the inside corner. In another embodiment, a shadow frame for a depositing chamber includes a rectangular shaped body having a rectangular opening therethrough, and one or more corner spoilers coupled to the rectangular shaped body at corners of the rectangular shaped body.

    Abstract translation: 本发明涉及一种设计用于通过改变气体流量来降低基板拐角区域的高沉积速率的拐角扰流板。 在一个实施例中，用于处理室的拐角扰流板包括由介电材料制成的L形主体，其中L形主体被配置为改变处理室中的基板的拐角处的等离子体分布。 L形本体包括第一和第二腿，其中第一和第二腿在L形体的内角处相交。 第一腿或第二腿的长度是在第一腿或第二腿与内角之间限定的距离的两倍。 在另一个实施例中，用于沉积室的阴影框架包括具有矩形开口的矩形体，以及在矩形体的角落处联接到矩形体的一个或多个拐角扰流板。

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