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公开(公告)号:US20200040455A1
公开(公告)日:2020-02-06
申请号:US16517255
申请日:2019-07-19
Applicant: Applied Materials, Inc.
Inventor: Jeffrey A. KHO , Chien-Teh KAO , Jianhua ZHOU
IPC: C23C16/455 , H01L51/56 , C23C16/52
Abstract: The present disclosure relates to methods and apparatus for an atomic layer deposition (ALD) chamber. In one embodiment, a lid assembly is provided that includes a multi-channel showerhead having a plurality of first gas channels and a plurality of second gas channels that are fluidly isolated from each of the first gas channels, and a flow guide coupled to opposing sides of the multi-channel showerhead, each of the flow guides being fluidly coupled to the plurality of second gas channels.
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公开(公告)号:US20160305025A1
公开(公告)日:2016-10-20
申请号:US15196751
申请日:2016-06-29
Applicant: Applied Materials, Inc.
Inventor: Soo Young CHOI , Robin L. TINER , Shinichi KURITA , John M. WHITE , Carl A. SORENSEN , Jeffrey A. KHO , Suhail ANWAR , Makoto INAGAWA , Gaku FURUTA
IPC: C23C16/509
CPC classification number: C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
Abstract translation: 描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。 该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频(RF)装置。 该方法包括相对于另一个电极移动一个电极,并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径,耦合到腔室的底部的RF器件和 电极或其组合。
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公开(公告)号:US20230077652A1
公开(公告)日:2023-03-16
申请号:US17903847
申请日:2022-09-06
Applicant: Applied Materials, Inc.
Inventor: Milan SIRY , Michael LIANG , Jeffrey A. KHO , Kwang Soo HUH
IPC: H01J37/32 , C23C16/455 , C23C16/56
Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas. The gas flow inlet guide having a flow guide bottom plate having an opening. A top plate is disposed over the flow guide bottom plate and a plasma blocker is disposed over the opening. The plasma blocker includes one or more apertures sized based one or more of a plasma density, an electron temperature, an ion temperature, or a characteristic of a process gas.
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公开(公告)号:US20200017971A1
公开(公告)日:2020-01-16
申请号:US16032854
申请日:2018-07-11
Applicant: Applied Materials, Inc.
Inventor: Chien-Teh KAO , Jeffrey A. KHO , Xiangxin RUI , Jianhua ZHOU , Shinichi KURITA , Shouqian SHAO , Guangwei SUN
IPC: C23C16/455 , C23C16/44
Abstract: Embodiments described herein provide a chamber having a gas flow inlet guide to uniformly deliver process gas and a gas flow outlet guide to effectively purge process gasses and reduce purge time. The chamber includes a chamber body having a process gas inlet and a process gas outlet, a lid assembly, a process gas inlet and a process gas outlet configured to be in fluid communication with a processing region in the chamber, a gas flow inlet guide disposed in the process gas inlet, and a gas flow outlet guide disposed in the process gas outlet. The gas flow inlet guide includes a flow modulator and at least two first inlet guide channels having first inlet guide channel areas that are different. The gas flow outlet guide includes at least two first outlet guide channels having first outlet guide channel areas that are different.
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