公开(公告)号：US20220298625A1

公开(公告)日：2022-09-22

申请号：US17834633

申请日：2022-06-07

申请人： Applied Materials, Inc.

发明人： Sang-Ho YU ,  Kevin MORAES ,  Seshadri GANGULI ,  Hua CHUNG ,  See-Eng PHAN

IPC分类号： C23C16/16 ,  H01L21/324 ,  H01L21/768 ,  C23C16/02 ,  C23C16/18 ,  H01L21/02 ,  H01L21/285 ,  C23C16/455 ,  C23C16/50

摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US20240218503A1

公开(公告)日：2024-07-04

申请号：US18608005

申请日：2024-03-18

申请人： Applied Materials, Inc.

发明人： Sang-Ho YU ,  Kevin MORAES ,  Seshadri GANGULI ,  Hua CHUNG ,  See-Eng PHAN

IPC分类号： C23C16/16 ,  C23C16/02 ,  C23C16/18 ,  C23C16/455 ,  C23C16/50 ,  H01L21/02 ,  H01L21/285 ,  H01L21/324 ,  H01L21/768

CPC分类号： C23C16/16 ,  C23C16/0218 ,  C23C16/0245 ,  C23C16/18 ,  C23C16/4554 ,  C23C16/45542 ,  C23C16/50 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US20170321320A1

公开(公告)日：2017-11-09

申请号：US15598687

申请日：2017-05-18

申请人： Applied Materials, Inc.

发明人： Sang-Ho YU ,  Kevin MORAES ,  Seshadri GANGULI ,  Hua CHUNG ,  See-Eng PHAN

IPC分类号： C23C16/16 ,  H01L21/768 ,  H01L21/285 ,  C23C16/02 ,  H01L21/02 ,  C23C16/18 ,  H01L21/324

CPC分类号： C23C16/16 ,  C23C16/0218 ,  C23C16/18 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US20150325446A1

公开(公告)日：2015-11-12

申请号：US14682218

申请日：2015-04-09

申请人： Applied Materials, Inc.

发明人： Sang-Ho YU ,  Kevin MORAES ,  Seshadri GANGULI ,  Hua CHUNG ,  See-Eng PHAN

IPC分类号： H01L21/285 ,  H01L21/768 ,  H01L21/324

CPC分类号： C23C16/16 ,  C23C16/0218 ,  C23C16/18 ,  H01L21/02068 ,  H01L21/02074 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/324 ,  H01L21/76849 ,  H01L21/7685 ,  H01L21/76862 ,  H01L21/76883

摘要： Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface. In another embodiment, a deposition-treatment cycle includes performing the vapor deposition process and subsequently a post-treatment process, which deposition-treatment cycle may be repeated to form multiple cobalt capping layers.

公开(公告)号：US20140076234A1

公开(公告)日：2014-03-20

申请号：US14057477

申请日：2013-10-18

申请人： Applied Materials, Inc.

发明人： Chien-Teh KAO ,  Jing-Pei Connie CHOU ,  Chiukin (Steven) LAI ,  Salvador P. UMOTOY ,  Joel M. HUSTON ,  Son TRINH ,  Mei CHANG ,  Xiaoxiong YUAN ,  Yu CHANG ,  Xinliang LU ,  Wei W. WANG ,  See-Eng PHAN

IPC分类号： H01L21/02

CPC分类号： H01L21/02104 ,  C23C14/022 ,  C23C14/50 ,  C23C14/541 ,  H01J37/32082 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32522 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32862 ,  H01J2237/2001 ,  H01L21/67069 ,  H01L21/67109 ,  H01L2924/0002 ,  H01L2924/00

摘要： A multi-chamber processing system includes a transfer chamber, a first processing chamber outfitted to perform CVD, a second processing chamber, and a robot positioned to transfer substrates between the transfer chamber, the first processing chamber, and the second processing chamber. The second processing chamber may include one or a combination of a first electrode and a second electrode comprising a plasma cavity formed therein.

摘要翻译： 多室处理系统包括传送室，用于执行CVD的第一处理室，第二处理室和位于传送室，第一处理室和第二处理室之间传送基板的机器人。 第二处理室可以包括第一电极和第二电极中的一个或组合，其包括其中形成的等离子体腔。