公开(公告)号：US20170053784A1

公开(公告)日：2017-02-23

申请号：US15240927

申请日：2016-08-18

申请人： APPLIED MATERIALS, INC.

发明人： Anantha K. SUBRAMANI ,  Hanbing WU ,  Wei W. WANG ,  Ashish GOEL ,  Srinivas GUGGILLA ,  Lavinia NISTOR

IPC分类号： H01J37/34 ,  C23C14/34

CPC分类号： H01J37/3417 ,  C23C14/3464 ,  C23C14/564 ,  H01J37/32871 ,  H01J37/3429 ,  H01J37/3441 ,  H01J37/3447 ,  H01J37/3464 ,  H01J37/3485

摘要： Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

摘要翻译： 本文提供了用于共溅射多个靶材料的方法和装置的实施例。 在一些实施例中，包括用于支撑衬底的衬底支撑件的处理室; 耦合到载体并且具有相应的多个靶以溅射到所述衬底上的多个阴极; 以及耦合到所述载体并在所述多个靶的相邻对之间延伸的过程屏蔽。

公开(公告)号：US20160372351A1

公开(公告)日：2016-12-22

申请号：US15188103

申请日：2016-06-21

申请人： Applied Materials, Inc.

发明人： Kaushal K. SINGH ,  Deepak JADHAV ,  Ashutosh AGARWAL ,  Ashish GOEL ,  Vijay PARIHAR ,  Er-Xuan PING ,  Randhir P.S. THAKUR

IPC分类号： H01L21/67 ,  C23C16/455 ,  H01L21/475 ,  H01L21/441 ,  H01L21/02 ,  H01L21/4757

CPC分类号： C23C16/45525 ,  C23C14/56 ,  C23C16/54 ,  H01L21/0217 ,  H01L21/02181 ,  H01L21/02381 ,  H01L21/02568 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67167 ,  H01L21/6719 ,  H01L21/6723

摘要： Embodiments described herein provide a remote plasma system utilizing a microwave source. Additionally, generation and deposition techniques for 2D transition metal chalcogenides with large area uniformity utilizing microwave assisted generation of radicals is disclosed. Plasma may be generated remotely utilizing the microwave source. A processing platform configured to deposit 2D transition metal chalcogenides is also disclosed.

摘要翻译： 本文所述的实施例提供了利用微波源的远程等离子体系统。 另外，公开了利用微波辅助生成自由基的具有大面积均匀性的二维过渡金属硫族化物的生成和沉积技术。 可以使用微波源远程产生等离子体。 还公开了一种配置成沉积2D过渡金属硫属化物的处理平台。

公开(公告)号：US20200098559A1

公开(公告)日：2020-03-26

申请号：US16695793

申请日：2019-11-26

申请人： Applied Materials, Inc.

发明人： Ashish GOEL ,  Anantha SUBRAMANI ,  Maurice E. EWERT

IPC分类号： H01L21/02 ,  C23C16/48 ,  C23C14/54

摘要： In one embodiment, an adapter plate for a deposition chamber is provided. The adapter plate comprises a body, a mounting plate centrally located on the body, a first annular portion extending longitudinally from a first surface of the mounting plate and disposed radially inward from an outer surface of the mounting plate, a second annular portion extending longitudinally from an opposing second surface of the mounting plate and disposed radially inward from the outer surface of the mounting plate, and a mirror-finished surface disposed on the interior of the second annular portion, the mirror-finished surface having an average surface roughness of 6 Ra or less.

公开(公告)号：US20200013597A1

公开(公告)日：2020-01-09

申请号：US16573265

申请日：2019-09-17

申请人： APPLIED MATERIALS, INC.

发明人： Anantha K. SUBRAMANI ,  Hanbing WU ,  Wei W. WANG ,  Ashish GOEL ,  Srinivas GUGGILLA ,  Lavinia NISTOR

IPC分类号： H01J37/34 ,  C23C14/34

摘要： Embodiments of a method and apparatus for co-sputtering multiple target materials are provided herein. In some embodiments, a process chamber including a substrate support to support a substrate; a plurality of cathodes coupled to a carrier and having a corresponding plurality of targets to be sputtered onto the substrate; and a process shield coupled to the carrier and extending between adjacent pairs of the plurality of targets.

公开(公告)号：US20190287758A1

公开(公告)日：2019-09-19

申请号：US15925739

申请日：2018-03-19

申请人： APPLIED MATERIALS, INC.

发明人： Yaoling PAN ,  Vijaykumar KRITHIVASAN ,  Shimin MAO ,  Kelvin CHAN ,  Michael D. WILLWERTH ,  Anantha SUBRAMANI ,  Ashish GOEL ,  Chih-shun LU ,  Philip Allan KRAUS ,  Patrick John TAE ,  Leonard TEDESCHI

IPC分类号： H01J37/244 ,  H01L21/67 ,  H01L41/047 ,  H01L41/053 ,  H01L41/31 ,  H01L41/29 ,  H01L41/04 ,  H01J37/32

摘要： Embodiments described herein include a resonant process monitor and methods of forming such a resonant process monitor. In an embodiment, the resonant process monitor includes a frame that has a first opening and a second opening. In an embodiment, a resonant body seals the first opening of the frame. In an embodiment, a first electrode on a first surface of the resonant body contacts the frame and a second electrode is on a second surface of the resonant body. Embodiments also include a back plate that seals the second opening of the frame. In an embodiment the back plate is mechanically coupled to the frame, and the resonant body, the back plate, and interior surfaces of the frame define a cavity.