公开(公告)号：US20180294146A1

公开(公告)日：2018-10-11

申请号：US15947393

申请日：2018-04-06

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Prashanth KOTHNUR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN ,  Changgong WANG

IPC: H01J37/32

Abstract: Implementations of the present disclosure generally relate to an apparatus for reducing particle contamination on substrates in a plasma processing chamber. The apparatus for reduced particle contamination includes a chamber body, a lid coupled to the chamber body. The chamber body and the lid define a processing volume therebetween. The apparatus also includes a substrate support disposed in the processing volume and an edge ring. The edge ring includes an inner lip disposed over a substrate, a top surface connected to the inner lip, a bottom surface opposite the top surface and extending radially outward from the substrate support, and an inner step between the bottom surface and the inner lip. To avoid depositing the particles on the substrate being processed when the plasma is de-energized, the edge ring shifts the high plasma density zone away from the edge area of the substrate.

公开(公告)号：US20250146119A1

公开(公告)日：2025-05-08

申请号：US18939220

申请日：2024-11-06

Applicant: Applied Materials, Inc.

Inventor： Martin Lee RIKER ,  Abilash SAINATH ,  Suhas UMESH ,  Keyvan KASHEFIZADEH ,  Yunho KIM ,  Sundarapandian Ramaling Vijayalaskshmi REDDY ,  Prashanth KOTHNUR

IPC: C23C14/02 ,  C23C14/35

Abstract: In some embodiments, a physical vapor deposition apparatus includes a top flux optimizer configured to be biased. The physical vapor deposition apparatus further includes an intermediate flux optimizer configured to be biased. The top flux optimizer and the intermediate flux optimizer are separated by a first distance. The physical vapor deposition apparatus further includes a bottom flux optimizer configured to be biased. The bottom flux optimizer and the intermediate flux optimizer are separated by a second distance. The physical vapor deposition apparatus further includes a top power source coupled to the top flux optimizer, an intermediate power source coupled to the intermediate flux optimizer, and a bottom power source coupled to the bottom flux optimizer.

公开(公告)号：US20210069745A1

公开(公告)日：2021-03-11

申请号：US17013462

申请日：2020-09-04

Applicant: Applied Materials, Inc.

Inventor： Alexander N. LERNER ,  Roey SHAVIV ,  Phillip STOUT ,  Prashanth KOTHNUR ,  Joseph M. RANISH

IPC: B05D1/00 ,  B05B1/00 ,  B05B15/60 ,  B05B1/18 ,  B05B11/00 ,  B05B12/14 ,  B05B1/16

Abstract: Embodiments of the present disclosure generally relate to organic vapor deposition systems and substrate processing methods related thereto. In one embodiment, a processing system comprises a lid assembly and a plurality of material delivery systems. The lid assembly includes lid plate having a first surface and a second surface disposed opposite of the first surface and a showerhead assembly coupled to the first surface. The showerhead assembly comprises a plurality of showerheads. Individual ones of the plurality of material delivery systems are fluidly coupled to one or more of the plurality of showerheads and are disposed on the second surface of the lid plate. Each of the material delivery systems comprise a delivery line, a delivery line valve disposed on the delivery line, a bypass line fluidly coupled to the delivery line at a point disposed between the delivery line valve and the showerhead, and a bypass valve disposed on the bypass line.

公开(公告)号：US20220081756A1

公开(公告)日：2022-03-17

申请号：US17021661

申请日：2020-09-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting HOU ,  Jianxin LEI ,  Jothilingam RAMALINGAM ,  Prashanth KOTHNUR ,  William R. JOHANSON

IPC: C23C14/18 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35

Abstract: Method and apparatus that forms low resistivity tungsten film on substrates. In some embodiments, a method of reducing resistivity of tungsten includes generating a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz and a magnetron, applying bias power at frequency of approximately 13.56 MHz to a substrate, and sputtering a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US20150114823A1

公开(公告)日：2015-04-30

申请号：US14062627

申请日：2013-10-24

Applicant: Applied Materials, Inc.

Inventor： Joung Joo LEE ,  Guojun LIU ,  Wei W. WANG ,  Prashanth KOTHNUR

IPC: H01J37/34 ,  C23C14/34

CPC classification number: H01J37/3447 ,  C23C14/042 ,  C23C14/22 ,  C23C14/3471 ,  H01J37/3426

Abstract: The present invention provides an apparatus including a bipolar collimator disposed in a physical vapor deposition chamber and methods of using the same. In one embodiment, an apparatus includes a chamber body and a chamber lid disposed on the chamber body defining a processing region therein, a collimator disposed in the processing region, and a power source coupled to the collimator.

Abstract translation: 本发明提供一种装置，包括设置在物理气相沉积室中的双极准直器及其使用方法。 在一个实施例中，一种装置包括室主体和设置在室主体上的室盖，其限定其中的处理区域，设置在处理区域中的准直器和耦合到准直器的电源。

公开(公告)号：US20220380888A1

公开(公告)日：2022-12-01

申请号：US17334630

申请日：2021-05-28

Applicant: Applied Materials, Inc.

Inventor： Goichi YOSHIDOME ,  Suhas BANGALORE UMESH ,  Sushil Arun SAMANT ,  Martin Lee RIKER ,  Wei LEI ,  Kishor Kumar KALATHIPARAMBIL ,  Shirish A. PETHE ,  Fuhong ZHANG ,  Prashanth KOTHNUR ,  Andrew TOMKO

IPC: C23C14/35 ,  H01J37/34

Abstract: Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

公开(公告)号：US20220341025A1

公开(公告)日：2022-10-27

申请号：US17857370

申请日：2022-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenting HOU ,  Jianxin LEI ,  Jothilingam RAMALINGAM ,  Prashanth KOTHNUR ,  William R. JOHANSON

IPC: C23C14/18 ,  C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/14 ,  C23C14/16

Abstract: Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a crystalline orientation plane approximately parallel to a top surface of the substrate.

公开(公告)号：US20230042777A1

公开(公告)日：2023-02-09

申请号：US17971692

申请日：2022-10-24

Applicant: Applied Materials, Inc.

Inventor： Alexander N. LERNER ,  Roey SHAVIV ,  Prashanth KOTHNUR ,  Satish RADHAKRISHNAN ,  Xiaozhou CHE

IPC: C23C16/448 ,  C23C16/458 ,  C23C16/455 ,  C23C16/52 ,  C23C14/00 ,  C23C16/00

Abstract: One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

公开(公告)号：US20200381222A1

公开(公告)日：2020-12-03

申请号：US16996004

申请日：2020-08-18

Applicant: Applied Materials, Inc.

Inventor： Bhaskar KUMAR ,  Prashanth KOTHNUR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN ,  Changgong WANG

IPC: H01J37/32

Abstract: Embodiments of the present disclosure generally relate to apparatuses for reducing particle contamination on substrates in a plasma processing chamber. In one or more embodiments, an edge ring is provided and includes a top surface, a bottom surface opposite the top surface and extending radially outward, an outer vertical wall extending between and connected to the top surface and the bottom surface, an inner vertical wall opposite the outer vertical wall, an inner lip extending radially inward from the inner vertical wall, and an inner step disposed between and connected to the inner wall and the bottom surface. During processing, the edge ring shifts the high plasma density zone away from the edge area of the substrate to avoid depositing particles on the substrate when the plasma is de-energized.

公开(公告)号：US20140262767A1

公开(公告)日：2014-09-18

申请号：US13836328

申请日：2013-03-15

Applicant: APPLIED MATERIALS, INC.

Inventor： Anantha K. SUBRAMANI ,  Tza-Jing GUNG ,  Prashanth KOTHNUR ,  Hanbing WU

IPC: H01L21/67

CPC classification number: C23C14/3414 ,  C23C14/3407 ,  C23C14/35 ,  H01J37/34 ,  H01J37/3402 ,  H01J37/3405 ,  H01J37/342 ,  H01J37/3423 ,  H01J37/3426 ,  H01J37/345

Abstract: Embodiments of a sputter source for semiconductor process chambers are provided herein. In some embodiments, a sputter source for a semiconductor process chamber may include: a target comprising a magnetic material to be deposited on a substrate, the magnetic material including a front surface where material is to be sputtered and an opposing back surface; and an outer magnet disposed proximate a back surface of the target and arranged symmetrically with respect to a central axis of the target, wherein the target has an annular groove formed in the back surface of the target disposed proximate the outer magnet to reduce a magnetic permeability of a region of the target proximate the outer magnet, wherein the groove is an unfilled v-shaped groove having an inner angle greater than 90 degrees.

Abstract translation: 本文提供了用于半导体处理室的溅射源的实施例。 在一些实施例中，用于半导体处理室的溅射源可以包括：靶，其包括待沉积在基底上的磁性材料，所述磁性材料包括物料被溅射的前表面和相对的后表面; 以及设置在所述靶的后表面附近并相对于所述靶的中心轴对称设置的外磁体，其中所述靶具有形成在所述靶的后表面中的邻近所述外磁体设置的环形槽，以减小磁导率 邻近外磁体的靶的区域，其中所述凹槽是具有大于90度的内角的未填充的V形凹槽。