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    CHUCKING PROCESS AND SYSTEM FOR SUBSTRATE PROCESSING CHAMBERS
    1.
    发明申请
    CHUCKING PROCESS AND SYSTEM FOR SUBSTRATE PROCESSING CHAMBERS 审中-公开

    公开(公告)号：US20200286716A1

    公开(公告)日：2020-09-10

    申请号：US16803479

    申请日：2020-02-27

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN ,  Vivek Bharat SHAH ,  Jiheng ZHAO

    IPC: H01J37/32 ,  C23C16/50 ,  C23C16/458

    Abstract: The present disclosure relates to methods and systems for chucking in substrate processing chambers. In one implementation, a method of chucking one or more substrates in a substrate processing chamber includes applying a chucking voltage to a pedestal. A substrate is disposed on a support surface of the pedestal. The method also includes ramping the chucking voltage from the applied voltage, detecting an impedance shift while ramping the chucking voltage, determining a corresponding chucking voltage at which the impedance shift occurs, and determining a refined chucking voltage based on the impedance shift and the corresponding chucking voltage.

    SHUNT DOOR FOR MAGNETS IN PLASMA PROCESS CHAMBER
    4.
    发明申请
    SHUNT DOOR FOR MAGNETS IN PLASMA PROCESS CHAMBER 有权

    公开(公告)号：US20210269919A1

    公开(公告)日：2021-09-02

    申请号：US17131315

    申请日：2020-12-22

    Applicant: Applied Materials, Inc.

    Inventor： Kallol BERA ,  Sathya Swaroop GANTA ,  Timothy Joseph FRANKLIN ,  Kaushik ALAYAVALLI ,  Akshay DHANAKSHIRUR ,  Stephen C. GARNER ,  Bhaskar KUMAR

    IPC: C23C16/52 ,  H01J37/32 ,  C23C16/54

    Abstract: Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film on a substrate and/or facilitate chamber cleaning after processing. In one embodiment, a system is disclosed that includes a rotational magnetic housing disposed about an exterior sidewall of a chamber. The rotational magnetic housing includes a plurality of magnets coupled to a sleeve that are configured to travel in a circular path when the rotational magnetic housing is rotated around the chamber, and a plurality of shunt doors movably disposed between the chamber and the sleeve, wherein each of the shunt doors are configured to move relative to the magnets.

    ALUMINUM FLUORIDE MITIGATION BY PLASMA TREATMENT
    5.
    发明申请
    ALUMINUM FLUORIDE MITIGATION BY PLASMA TREATMENT 审中-公开

    公开(公告)号：US20180036775A1

    公开(公告)日：2018-02-08

    申请号：US15653785

    申请日：2017-07-19

    Applicant: Applied Materials, Inc.

    Inventor： Vivek Bharat SHAH ,  Anup Kumar SINGH ,  Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN ,  Bok Hoen KIM

    IPC: B08B7/00 ,  C23C16/50 ,  C23C16/44 ,  B08B9/08

    Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate-processing chamber. In one implementation, the method comprises forming a reactive fluorine species from a fluorine-containing cleaning gas mixture. The method further comprises delivering the reactive fluorine species into a processing volume of a substrate-processing chamber. The processing volume includes one or more aluminum-containing interior surfaces having unwanted deposits formed thereon. The method further comprises permitting the reactive fluorine species to react with the unwanted deposits and aluminum-containing interior surfaces of the substrate-processing chamber to form aluminum fluoride. The method further comprises exposing nitrogen-containing cleaning gas mixture to in-situ plasma to form reactive nitrogen species in the processing volume. The method further comprises permitting the reactive nitrogen species to react with the ammonium fluoride to convert the aluminum fluoride to aluminum nitride.

    GAS PHASE PARTICLE REDUCTION IN PECVD CHAMBER
    7.
    发明申请
    GAS PHASE PARTICLE REDUCTION IN PECVD CHAMBER 审中-公开

    公开(公告)号：US20180294139A1

    公开(公告)日：2018-10-11

    申请号：US15945413

    申请日：2018-04-04

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Sidharth BHATIA ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Ganesh BALASUBRAMANIAN

    IPC: H01J37/32 ,  H01L21/02 ,  H01L21/285 ,  C23C16/52

    Abstract: The present disclosure relates to methods and apparatus for reducing particle contamination on substrates in a plasma process chamber. In one embodiment, by applying a DC power to an electrode surrounding a processing region, the boundary of a plasma region formed in the processing region extends closer to the chamber body and outside of the diameter of the substrate support. In another embodiment, by applying a negative bias to an electrode or a positive bias to the lid, negatively charged species located at the boundary of the plasma region are lifted by the electrostatic force created by the negative bias or the positive bias. As a result, species located at the boundary of the plasma region will not fall onto the edge of the substrate disposed on the substrate support as the electric power for sustaining the plasma region is turned off, leading to reduced particle contamination on the substrate.

    TECHNIQUES TO IMPROVE ADHESION AND DEFECTS FOR TUNGSTEN CARBIDE FILM
    9.
    发明申请
    TECHNIQUES TO IMPROVE ADHESION AND DEFECTS FOR TUNGSTEN CARBIDE FILM 有权

    公开(公告)号：US20210108309A1

    公开(公告)日：2021-04-15

    申请号：US16960277

    申请日：2019-01-03

    Applicant: Applied Materials, Inc.

    Inventor： Vivek Bharat SHAH ,  Anup Kumar SINGH ,  Bhaskar KUMAR ,  Ganesh BALASUBRAMANIAN

    IPC: C23C16/02 ,  C23C16/32 ,  C23C16/513 ,  C23C16/455 ,  C23C16/52

    Abstract: Implementations of the present disclosure generally relate to hardmask films and methods for depositing hardmask films. More particularly, implementations of the present disclosure generally relate to tungsten carbide hardmask films and processes for depositing tungsten carbide hardmask films. In one implementation, a method of forming a tungsten carbide film is provided. The method comprises forming a tungsten carbide initiation layer on a silicon-containing surface of a substrate at a first deposition rate. The method further comprises forming a tungsten carbide film on the tungsten carbide initiation layer at a second deposition rate, wherein the second deposition rate is greater than the first deposition rate.

    APPARATUS AND METHODS FOR REMOVING CONTAMINANT PARTICLES IN A PLASMA PROCESS
    10.
    发明申请
    APPARATUS AND METHODS FOR REMOVING CONTAMINANT PARTICLES IN A PLASMA PROCESS 审中-公开

    公开(公告)号：US20190259585A1

    公开(公告)日：2019-08-22

    申请号：US16262307

    申请日：2019-01-30

    Applicant: Applied Materials, Inc.

    Inventor： Bhaskar KUMAR ,  Anup Kumar SINGH ,  Vivek Bharat SHAH ,  Sidharth BHATIA ,  Ganesh BALASUBRAMANIAN

    IPC: H01J37/32

    Abstract: A method and apparatus for operating a plasma processing chamber includes performing a plasma process at a process pressure and a pressure power to generate a plasma. A first ramping-down stage starts in which the process power and the process pressure are ramped down substantially simultaneously to an intermediate power level and an intermediate pressure level, respectively. The intermediate power level and intermediate pressure level are preselected so as to raise a plasma sheath boundary above a threshold height from a surface of a substrate. A purge gas is flowed from a showerhead assembly at a sufficiently high rate to sweep away contaminant particles trapped in the plasma such that one or more contaminant particles move outwardly of an edge of the substrate. A second ramping-down stage starts where the intermediate power level and the intermediate pressure level decline to a zero level and a base pressure, respectively.

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