公开(公告)号：US20220064797A1

公开(公告)日：2022-03-03

申请号：US17403056

申请日：2021-08-16

Applicant: Applied Materials, Inc.

Inventor： Akshay DHANAKSHIRUR ,  Juan Carlos ROCHA-ALVAREZ ,  Kaushik Comandoor ALAYAVALLI ,  Jay D. PINSON, II ,  Rick KUSTRA ,  Badri N. RAMAMURTHI ,  Anup Kumar SINGH ,  Ganesh BALASUBRAMANIAN ,  Bhaskar KUMAR ,  Vinayak Vishwanath HASSAN ,  Canfeng LAI ,  Kallol BERA ,  Sathya Swaroop GANTA

IPC: C23C16/455 ,  H01J37/32

Abstract: A lid for a process chamber includes a plate having a first surface and a second surface opposite the first surface. The first surface has a recess and a seal groove formed in the first surface and surrounding the recess. The lid further includes an array of holes extending from the recess to the second surface.

公开(公告)号：US20220349050A1

公开(公告)日：2022-11-03

申请号：US17660442

申请日：2022-04-25

Applicant: Applied Materials, Inc.

Inventor： Rick KUSTRA ,  Kaushik Comandoor ALAYAVALLI ,  Jay D. PINSON, II ,  Sathya Swaroop GANTA ,  Anup Kumar SINGH

IPC: C23C16/44

Abstract: Embodiments of the present disclosure generally relate a process chamber including a lid and a chamber body coupled to the lid. The chamber body and lid define a process volume and a coupling ring is disposed within the chamber body and below the lid. The coupling ring is coupled to ground or is coupled to a coupling RF power source. A substrate support is disposed and movable within the process volume.

公开(公告)号：US20220093436A1

公开(公告)日：2022-03-24

申请号：US17028550

申请日：2020-09-22

Applicant: Applied Materials, Inc.

Inventor： Rick KUSTRA

IPC: H01L21/677 ,  H01L21/67

Abstract: A process chamber is provided including a chamber body enclosing an inner volume; a substrate support disposed in the inner volume; an electrode disposed above the substrate support; and an actuator configured to move the electrode in the process chamber to change a distance between the electrode and the substrate support.

公开(公告)号：US20230343586A1

公开(公告)日：2023-10-26

申请号：US18342296

申请日：2023-06-27

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Rick KUSTRA ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Krishna NITTALA ,  Pramit MANNA ,  Kaushik ALAYAVALLI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/02 ,  H01J37/32 ,  B08B7/00 ,  H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44

CPC classification number: H01L21/02274 ,  H01J37/32082 ,  H01J37/3244 ,  H01J37/32862 ,  B08B7/0035 ,  H01L21/0332 ,  C23C16/505 ,  C23C16/26 ,  C23C16/4405 ,  H01L21/02115

Abstract: Embodiments of the present disclosure generally relate to methods for cleaning a chamber comprising introducing a gas to a processing volume of the chamber, providing a first radiofrequency (RF) power having a first frequency of about 40 MHz or greater to a lid of the chamber, providing a second RF power having a second frequency to an electrode disposed in a substrate support within the processing volume, and removing at least a portion of a film disposed on a surface of a chamber component of the chamber. The second frequency is about 10 MHz to about 20 MHz.

公开(公告)号：US20220102141A1

公开(公告)日：2022-03-31

申请号：US17035107

申请日：2020-09-28

Applicant: Applied Materials, Inc.

Inventor： Anup Kumar SINGH ,  Rick KUSTRA ,  Vinayak Vishwanath HASSAN ,  Bhaskar KUMAR ,  Krishna NITTALA ,  Pramit MANNA ,  Kaushik Comandoor ALAYAVALLI ,  Ganesh BALASUBRAMANIAN

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/033 ,  C23C16/505 ,  C23C16/26 ,  C23C16/44 ,  B08B7/00

Abstract: Embodiments of the present disclosure generally relate to methods of depositing carbon film layers greater than 3,000 Å in thickness over a substrate and surface of a lid of a chamber using dual frequency, top, sidewall and bottom sources. The method includes introducing a gas to a processing volume of a chamber. A first radiofrequency (RF) power is provided having a first frequency of about 40 MHz or greater to a lid of the chamber. A second RF power is provided having a second frequency to a bias electrode disposed in a substrate support within the processing volume. The second frequency is about 10 MHz to about 40 MHz. An additional third RF power is provided having lower frequency of about 400 kHz to about 2 MHz to the bias electrode.

公开(公告)号：US20210384015A1

公开(公告)日：2021-12-09

申请号：US16896575

申请日：2020-06-09

Applicant: Applied Materials, Inc.

Inventor： Huiyuan WANG ,  Rick KUSTRA ,  Kaushik ALAYAVALLI ,  Eswaranand VENKATASUBRAMANIAN ,  Jay D. PINSON, II ,  Abhijit B. MALLICK

IPC: H01J37/32 ,  B08B5/00 ,  B08B9/08

Abstract: Embodiments of the present disclosure generally relate to clean methods for processing chambers, and more specifically relate to plasma clean methods for removing carbon films from surfaces within the processing chamber. A method for cleaning includes introducing a cleaning gas into a processing region within a processing chamber, where interior surfaces of the processing chamber have a coating containing amorphous carbon. The cleaning gas contains oxygen gas and a noble gas. The method also includes generating an ion coupled plasma (ICP) from the cleaning gas within an upper portion of the processing region and generating a bias across a substrate support in a lower portion of the processing region. The method further includes exposing the amorphous carbon to atomic oxygen ions produced from the oxygen gas and the ICP and removing the amorphous carbon from the interior surfaces with the atomic oxygen ions during a cleaning process.