公开(公告)号：US20250146119A1

公开(公告)日：2025-05-08

申请号：US18939220

申请日：2024-11-06

Applicant: Applied Materials, Inc.

Inventor： Martin Lee RIKER ,  Abilash SAINATH ,  Suhas UMESH ,  Keyvan KASHEFIZADEH ,  Yunho KIM ,  Sundarapandian Ramaling Vijayalaskshmi REDDY ,  Prashanth KOTHNUR

IPC: C23C14/02 ,  C23C14/35

Abstract: In some embodiments, a physical vapor deposition apparatus includes a top flux optimizer configured to be biased. The physical vapor deposition apparatus further includes an intermediate flux optimizer configured to be biased. The top flux optimizer and the intermediate flux optimizer are separated by a first distance. The physical vapor deposition apparatus further includes a bottom flux optimizer configured to be biased. The bottom flux optimizer and the intermediate flux optimizer are separated by a second distance. The physical vapor deposition apparatus further includes a top power source coupled to the top flux optimizer, an intermediate power source coupled to the intermediate flux optimizer, and a bottom power source coupled to the bottom flux optimizer.

公开(公告)号：US20240384396A1

公开(公告)日：2024-11-21

申请号：US18589392

申请日：2024-02-27

Applicant: Applied Materials, Inc.

Inventor： Xiangjin XIE ,  Suhas UMESH ,  Martin Lee RIKER

IPC: C23C14/54

Abstract: Embodiments of process chambers having a collimator are provided herein. In some embodiments, a process chamber includes: a chamber body having sidewalls and a top plate to define an interior volume therein, the top plate configured to support a target in the interior volume; a substrate support disposed in the interior volume opposite the top plate; a collimator disposed in the interior volume between the top plate and the substrate support; and a lower shield disposed in the interior volume about the collimator and coupled to the chamber body at a location below an upper surface of the collimator via a ceramic spacer disposed between the lower shield and the chamber body configured to electrically decouple the lower shield from the chamber body.

公开(公告)号：US20240213007A1

公开(公告)日：2024-06-27

申请号：US18089216

申请日：2022-12-27

Applicant: Applied Materials, Inc.

Inventor： Junjie PAN ,  Yida LIN ,  Xiangjin XIE ,  Martin Lee RIKER ,  Suhas UMESH ,  Keith A. MILLER

IPC: H01J37/34 ,  C23C14/35 ,  C23C14/54

CPC classification number: H01J37/3464 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3476 ,  H01J2237/332

Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.