Power Compensation in PVD Chambers
    1.
    发明公开

    公开(公告)号:US20240213007A1

    公开(公告)日:2024-06-27

    申请号:US18089216

    申请日:2022-12-27

    Abstract: Methods and apparatus for controlling processing of a substrate within a process chamber, comprising: performing statistical analysis on measurements of deposition profile of at least one previously processed substrate processed in the process chamber, wherein the deposition profile is based at least on modulating a power parameter of at least one power supply affecting a magnetron in the process chamber; determining, based on the statistical analysis, a model of the deposition profile as a function of at least the power parameter; fitting the measurements of deposition profile to the model; determining a power parameter setpoint for the at least one power supply using the fitted model based on a desired deposition profile of an unprocessed substrate; and setting the power parameter setpoint for processing the unprocessed substrate.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE

    公开(公告)号:US20230230806A1

    公开(公告)日:2023-07-20

    申请号:US17568836

    申请日:2022-01-05

    CPC classification number: H01J37/32183 B23K15/0006 H01J2237/327

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, an RF power delivery compensation circuit comprises a first input configured to receive an RF forward power from an RF power source connected to a processing chamber and a second input configured to receive an RF delivered power from a matching network connected between the RF power source and the processing chamber. The RF power delivery compensation circuit calculates an RF forward power compensation factor based on the RF forward power and the RF delivered power for adjusting the RF forward power delivered to the processing chamber during operation.

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