公开(公告)号：US20160189941A1

公开(公告)日：2016-06-30

申请号：US14587967

申请日：2014-12-31

申请人： APPLIED MATERIALS, INC.

发明人： Junqi Wei ,  Zhitao Cao ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Kirankumar Savandaiah ,  Xin Wang ,  Sriskantharajah Thirunavukarasu

IPC分类号： H01J37/34 ,  H01J37/32 ,  B22F3/12

CPC分类号： H01J37/3429 ,  B22F3/12 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/0458 ,  C22C14/00 ,  C22C27/04 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/10 ,  B22F2003/247 ,  B22F2202/13

摘要： Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.

摘要翻译： 本公开的实施例包括用于控制钛 - 钨（TiW）靶结节形成的方法和装置。 在一些实施方案中，靶包括：主要由钛粉末和钨粉末的混合物形成的钛（Ti）和钨（W）的源材料，其中主要量的钛粉末的晶粒尺寸小于或等于 等于主要量的钨粉的粒度。

公开(公告)号：US09953812B2

公开(公告)日：2018-04-24

申请号：US15287675

申请日：2016-10-06

申请人： APPLIED MATERIALS, INC.

发明人： William Johanson ,  Kirankumar Savandaiah ,  Xin Wang ,  Prashant Prabhu

IPC分类号： H01J37/34 ,  H01J37/32 ,  C23C14/34 ,  C23C14/56

CPC分类号： H01J37/3441 ,  C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32642 ,  H01J37/32651

摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes: a one-piece process kit shield having a cylindrical body having an upper portion and a lower portion; an adapter section extending radially outward and having a resting surface to support the one-piece process kit shield on walls of a chamber and a sealing surface on which a chamber lid rests to seal off an inner volume of the chamber when the one-piece process kit shield is placed in the chamber; a heat transfer channel extending through the adapter section; and a protruding section extending radially inward from the lower portion; a resting bracket having an upper portion coupled to the adapter section and a lower portion extending radially inward; a cover ring disposed beneath the protruding section; and a deposition ring disposed beneath the cover ring.

公开(公告)号：US09909206B2

公开(公告)日：2018-03-06

申请号：US15201019

申请日：2016-07-01

申请人： APPLIED MATERIALS, INC.

发明人： William Johanson ,  Kirankumar Savandaiah ,  Adolph Miller Allen ,  Xin Wang ,  Prashant Prabhu

IPC分类号： H01J37/34 ,  C23C14/34 ,  C23C14/56 ,  H01J37/32

CPC分类号： C23C14/3407 ,  C23C14/564 ,  H01J37/32477 ,  H01J37/34 ,  H01J37/3488

摘要： Embodiments of process kits and process chambers incorporating same are provided herein. In some embodiments, a process kit includes a deposition ring configured to be disposed on a substrate support designed to support a substrate having a given width, including: an annular band configured to rest on a lower ledge of the substrate support; an inner lip extending upwardly from an inner edge of the annular band, wherein an inner surface of the inner lip and an inner surface of the annular band together form a central opening having a width that is less than the given width, and wherein a depth between an upper surface of the annular band and an upper surface of the inner lip is between about 24 mm and about 38 mm; a channel disposed radially outward of the annular band; and an outer lip extending upwardly and disposed radially outward of the channel.

公开(公告)号：US09960023B2

公开(公告)日：2018-05-01

申请号：US14587967

申请日：2014-12-31

申请人： APPLIED MATERIALS, INC.

发明人： Junqi Wei ,  Zhitao Cao ,  Yueh Sheng Ow ,  Ananthkrishna Jupudi ,  Kirankumar Savandaiah ,  Xin Wang ,  Sriskantharajah Thirunavukarasu

IPC分类号： C23C14/34 ,  H01J37/34 ,  C22C1/04 ,  C22C27/04 ,  B22F3/12 ,  C22C14/00

CPC分类号： H01J37/3429 ,  B22F3/12 ,  B22F2998/10 ,  B22F2999/00 ,  C22C1/0458 ,  C22C14/00 ,  C22C27/04 ,  C23C14/3414 ,  H01J37/3426 ,  H01J37/3491 ,  B22F1/0003 ,  B22F3/02 ,  B22F3/10 ,  B22F2003/247 ,  B22F2202/13

摘要： Embodiments of the present disclosure include methods and apparatus for controlling titanium-tungsten (TiW) target nodule formation. In some embodiments, a target includes: a source material comprising predominantly titanium (Ti) and tungsten (W), formed from a mixture of titanium powder and tungsten powder, wherein a grain size of a predominant quantity of the titanium powder is less than or equal to a grain size of a predominant quantity of the tungsten powder.