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    METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE
    2.
    发明申请
    METHOD AND APPARATUS FOR SURFACE PROCESSING OF A SUBSTRATE 审中-公开
    基板表面处理的方法和装置

    公开(公告)号：US20110089022A1

    公开(公告)日：2011-04-21

    申请号：US12977430

    申请日：2010-12-23

    申请人： Boris Druz ,  Viktor Kanarov ,  Hariharakeshave S. Hegde ,  Alan V. Hayes ,  Emmanuel Lakios

    发明人： Boris Druz ,  Viktor Kanarov ,  Hariharakeshave S. Hegde ,  Alan V. Hayes ,  Emmanuel Lakios

    IPC分类号： C23C14/34 ,  C23C14/46 ,  C23C14/35

    CPC分类号： C23C14/044 ,  C23C14/221

    摘要： Method and apparatus for processing a substrate with a beam of energetic particles. The beam is directed from a source through a rectangular aperture in a shield positioned between the source and substrate to a treatment zone in a plane of substrate movement. Features on the substrate are aligned parallel to a major dimension of the rectangular aperture and the substrate is moved orthogonally to the aperture's major dimension. The beam impinges the substrate through the aperture during movement. The substrate may be periodically rotated by approximately 180° to reorient the features relative to the major dimension of the rectangular aperture. The resulting treatment profile is symmetrical about the sides of the features oriented toward the major dimension of the rectangular aperture.

    摘要翻译： 用高能粒子束处理衬底的方法和装置。 光束从源极通过定位在源极和衬底之间的屏蔽件中的矩形孔引导到衬底移动平面中的处理区域。 衬底上的特征与矩形孔的主要尺寸平行排列，并且衬底与孔的主要尺寸正交地移动。 光束在运动过程中通过光圈撞击基板。 衬底可以周期性地旋转大约180°以重新定向相对于矩形孔的主要尺寸的特征。 所得到的处理轮廓关于朝向矩形孔的主要尺寸的特征的侧面对称。

    Power bridge rectifier assembly
    6.
    发明授权
    Power bridge rectifier assembly 失效
    电桥整流器总成

    公开(公告)号：US4724474A

    公开(公告)日：1988-02-09

    申请号：US938216

    申请日：1986-12-05

    申请人： Richard J. Duchek ,  Alan V. Hayes ,  Gregory T. Laux ,  Francis M. Ray

    发明人： Richard J. Duchek ,  Alan V. Hayes ,  Gregory T. Laux ,  Francis M. Ray

    IPC分类号： H01L25/07 ,  H01L29/44

    CPC分类号： H01L25/072 ,  H01L2224/32245 ,  Y10S257/909

    摘要： A bridge rectifier comprised of four passivated silicon diode chips coupled to convert an alternating voltage input to a direct voltage output includes four L-shaped leads each coupling the anode or cathode of one diode to either the same or opposite terminal of another diode. Each L-shaped lead includes transversely coupled first and second elongated, linear sections with the first sections of each lead forming either the AC input lines or DC output lines. The second section of each lead is coupled to either the anode or cathode of one of the diode chips, each of which includes a dielectric coated moat, or groove, around the periphery of one of its flat, generally rectangular shaped terminal surfaces which prevents charge migration on the edges of the chip and resulting leakage current. Each lead second section includes an upraised portion along the length thereof adapted for engaging and electrical coupling to either the anode or cathode surface of a diode, which when coupled to a diode terminal allows the remaining portion of the second lead section to be positioned in a spaced manner from the passivation moat as well as from an adjacent edge to prevent charge migration over the edge of the diode. In a second embodiment, the second lead section is provided with a pair of adjacent, facing upraised portions which provides for the interchangeability of all four leads.

    摘要翻译： 由四个被钝化的硅二极管芯片耦合以将交流电压输入转换成直流电压输出的桥式整流器包括四个L形引线，每个引线将一个二极管的阳极或阴极耦合到另一个二极管的相同或相对的端子。 每个L形引线包括横向耦合的第一和第二细长的线性部分，每个引线的第一部分形成AC输入线或DC输出线。 每个引线的第二部分耦合到二极管芯片中的一个的阳极或阴极，每个二极管芯片包括介电涂覆的护城河或槽，围绕其平坦的大致矩形的端子表面之一的周边，防止电荷 在芯片的边缘迁移并导致漏电流。 每个引线第二部分包括沿其长度的上升部分，其适于与二极管的阳极或阴极表面接合和电耦合，当二极管端子耦合到二极管端子时，允许将第二引线部分的剩余部分定位在 与钝化护环以及相邻边缘间隔开，以防止电荷迁移过二极管的边缘。 在第二实施例中，第二引线部分设置有一对相邻的面朝上的部分，其提供所有四个引线的互换性。

    ION SOURCES AND METHODS FOR GENERATING AN ION BEAM WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTION
    9.
    发明申请
    ION SOURCES AND METHODS FOR GENERATING AN ION BEAM WITH CONTROLLABLE ION CURRENT DENSITY DISTRIBUTION 有权
    用于产生具有可控离子电流密度分布的离子束的离子源和方法

    公开(公告)号：US20120211166A1

    公开(公告)日：2012-08-23

    申请号：US13448282

    申请日：2012-04-16

    申请人： Rustam Yevtukhov ,  Boris L. Druz ,  Viktor Kanarov ,  Alan V. Hayes

    发明人： Rustam Yevtukhov ,  Boris L. Druz ,  Viktor Kanarov ,  Alan V. Hayes

    IPC分类号： B05C9/00 ,  H01J27/16

    CPC分类号： H01J27/18 ,  H01J37/08 ,  H01J37/3053 ,  H01J2237/061 ,  H01J2237/083 ,  H01J2237/24542 ,  H01L21/31105

    摘要： Ion sources and methods for generating an ion bean with a controllable ion current density distribution. The ion source includes a discharge chamber having an optical grid position proximate at a first end and a re-entrant vessel positioned proximate a second end that opposes the first end. A plasma shaper extends from the re-entrant vessel and into the plasma discharge chamber. A position of the plasma shaper is adjustable relative to the grid-based ion optic such that the plasma shaper may operably change a plasma density distribution within the discharge chamber.

    摘要翻译： 用于产生具有可控离子电流密度分布的离子束的离子源和方法。 离子源包括具有靠近第一端的光栅位置的放电室和靠近与第一端相对的第二端的重入容器。 等离子体成形器从入口容器延伸到等离子体放电室中。 等离子体成形器的位置相对于基于栅格的离子光学器件是可调节的，使得等离子体成形器可以可操作地改变放电室内的等离子体密度分布。