公开(公告)号：US20230187167A1

公开(公告)日：2023-06-15

申请号：US18082543

申请日：2022-12-15

Applicant: Carnegie Mellon University

Inventor： Maarten de Boer ,  Longchang Ni

IPC: H01J37/20 ,  B81B7/00

CPC classification number: H01J37/20 ,  B81B7/0003 ,  H01J2237/20264 ,  H01J2237/20271 ,  H01J2237/20221 ,  H01J2237/3151

Abstract: A micro-electromechanical system (MEMS) device includes a silicon substrate; and a Tantalum (Ta) layer comprising a first portion and a second portion, a first portion being suspended over the silicon substrate and configured to move relative to the silicon substrate, and the second portion of the structure being coupled to the silicon substrate and fixed in place relative to the silicon substrate.

公开(公告)号：US11664193B2

公开(公告)日：2023-05-30

申请号：US17167416

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell ,  Kevin Verrier

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32

CPC classification number: H01J37/3053 ,  H01J37/304 ,  H01J37/32724 ,  H01J2237/0203 ,  H01J2237/3151

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

公开(公告)号：US09773638B2

公开(公告)日：2017-09-26

申请号：US14945630

申请日：2015-11-19

Applicant: JEOL Ltd.

Inventor： Yusuke Sakuda ,  Shunsuke Asahina

IPC: H01J37/147 ,  G01N1/32 ,  H01J37/305 ,  H01J37/08 ,  H01J37/20

CPC classification number: H01J37/1478 ,  G01N1/32 ,  H01J37/08 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/0213 ,  H01J2237/022 ,  H01J2237/3146 ,  H01J2237/3151

Abstract: A specimen preparation device prepares a cross section of a specimen by applying an ion beam, the specimen preparation device including: an ion beam generator that generates the ion beam; a specimen holder that holds the specimen; a shield plate that shields part of the specimen from the ion beam; and a tilted plate that is placed to intersect a path of the ion beam on a downstream side of the specimen, and has an incidence surface that is tilted relative to a direction in which the ion beam is incident.

公开(公告)号：US09734991B2

公开(公告)日：2017-08-15

申请号：US14811272

申请日：2015-07-28

Applicant: Varian Semiconductor Equipment Associates, Inc.

Inventor： Daniel Distaso ,  Svetlana B. Radovanov ,  Joseph P. Dzengeleski

IPC: H01J37/32 ,  H01J27/02 ,  H01J27/16 ,  H01J37/08

CPC classification number: H01J37/32146 ,  H01J27/024 ,  H01J27/028 ,  H01J27/16 ,  H01J37/08 ,  H01J37/3211 ,  H01J37/32422 ,  H01J2237/0815 ,  H01J2237/0827 ,  H01J2237/3151 ,  H01J2237/31701 ,  H01J2237/31732

Abstract: An apparatus and method for the creation of negative ion beams is disclosed. The apparatus includes an RF ion source, having an extraction aperture. An antenna disposed proximate a dielectric window is energized by a pulsed RF power supply. While the RF power supply is actuated, a plasma containing primarily positive ions and electrons is created. When the RF power supply is deactivated, the plasma transforms into an ion-ion plasma. Negative ions may be extracted from the RF ion source while the RF power supply is deactivated. These negative ions, in the form of a negative ribbon ion beam, may be directed toward a workpiece at a specific incident angle. Further, both a positive ion beam and a negative ion beam may be extracted from the same ion source by pulsing the bias power supply multiple times each period.

公开(公告)号：US20170069483A1

公开(公告)日：2017-03-09

申请号：US15122943

申请日：2014-04-01

Applicant: EV GROUP E. THALLNER GMBH

Inventor： Nasser RAZEK

IPC: H01L21/02 ,  H01L21/67 ,  C23C16/50 ,  C23C14/02 ,  H01J37/32

CPC classification number: H01L21/02046 ,  C23C14/022 ,  C23C16/50 ,  H01J37/32009 ,  H01J2237/08 ,  H01J2237/3137 ,  H01J2237/3151 ,  H01L21/67028

Abstract: A method for the surface treatment of a substrate surface of a substrate with the following steps: arrangement of the substrate surface in a process chamber, bombardment of the substrate surface with an ion beam, generated by an ion beam source and aimed at the substrate surface, to remove impurities from the substrate surface, whereby the ion beam has a first component, introduction of a second component into the process chamber to bind the removed impurities. A device for the surface treatment of a substrate surface of a substrate with: a process chamber for receiving the substrate, an ion beam source for generating an ion beam that has a first component and is aimed at the substrate surface to remove impurities from the substrate surface, means to introduce a second component into the process chamber to bind the removed impurities.

Abstract translation: 一种用于基板表面处理的方法，包括以下步骤：在处理室中布置基板表面，用离子束轰击衬底表面，由离子束源产生并瞄准基板表面 从衬底表面去除杂质，由此离子束具有第一组分，将第二组分引入处理室以结合去除的杂质。 一种用于对衬底的衬底表面进行表面处理的装置，其具有：用于接收衬底的处理室，用于产生离子束的离子束源，所述离子束具有第一组分并且靶向衬底表面以从衬底去除杂质 表面，是将第二组分引入处理室以结合去除的杂质的手段。

公开(公告)号：US20170047198A1

公开(公告)日：2017-02-16

申请号：US15306510

申请日：2014-05-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Kento HORINOUCHI ,  Atsushi KAMINO ,  Toru IWAYA ,  Hisayuki TAKASU

IPC: H01J37/305 ,  H01J37/20 ,  G01N1/32

CPC classification number: H01J37/305 ,  G01N1/32 ,  H01J37/09 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/045 ,  H01J2237/3151

Abstract: Provided is a technology for suppressing a heat rise in a sample, the heat rise being generated due to ion beam irradiation at a low acceleration voltage. A blocking plate, which is different from a mask, is disposed in front of a sample. The blocking plate has an opening that overlaps a processing surface, and ion beams pass only through the opening of the blocking plate, and in the areas excluding the opening, the ion beams are blocked by the blocking plate, and the sample is not irradiated thereby. Furthermore, the heat rise in the sample is further suppressed by cooling the blocking plate.

Abstract translation: 本发明提供一种抑制试样的热升高的技术，由于在低加速电压下的离子束照射而产生热量上升。 与样品不同的阻挡板被放置在样品的前面。 阻挡板具有与处理面重叠的开口，离子束仅穿过阻挡板的开口，并且在除开口以外的区域中，离子束被阻挡板阻挡，并且样品不被照射 。 此外，通过冷却阻挡板进一步抑制样品中的热升高。

公开(公告)号：US09507139B2

公开(公告)日：2016-11-29

申请号：US14944517

申请日：2015-11-18

Applicant: JEOL Ltd.

Inventor： Tsutomu Negishi ,  Tooru Kasai

IPC: G01N1/32 ,  G02B21/26 ,  H01J37/20 ,  H01J37/31

CPC classification number: G02B21/26 ,  G01N1/32 ,  H01J37/20 ,  H01J37/3005 ,  H01J37/3053 ,  H01J2237/20207 ,  H01J2237/3151

Abstract: A specimen holder is used for an optical microscope, comprising: a specimen support that supports a specimen to enable the specimen to tilt relative to the optical axis of the optical microscope; an adjustment plate that has an observation surface for making observations using the optical microscope; and an adjustment plate support that supports the adjustment plate, so that the angle formed by the optical axis and the observation surface is larger than the angle formed by the optical axis and a specimen surface of the specimen.

Abstract translation: 样品架用于光学显微镜，包括：样品支撑体，其支撑试样以使样品相对于光学显微镜的光轴倾斜; 调整板，其具有使用光学显微镜进行观察的观察面; 以及支撑调节板的调节板支撑件，使得由光轴和观察表面形成的角度大于由光轴和样本的样本表面形成的角度。

公开(公告)号：US20150307986A1

公开(公告)日：2015-10-29

申请号：US14697441

申请日：2015-04-27

Applicant: Sarpangala H. Hegde ,  Vincent Lee ,  Peter Goglia

Inventor： Sarpangala H. Hegde ,  Vincent Lee ,  Peter Goglia

IPC: C23C14/50 ,  C23C14/22

CPC classification number: C23C14/505 ,  C23C14/221 ,  H01J37/20 ,  H01J37/30 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/3142 ,  H01J2237/3151

Abstract: A planetary arm coupled to a tilt actuator moves a wafer in oscillatory motion along an arcuate path to expose a surface of the wafer to an incident ion beam for deposition and/or etching processing of thin film structures on the surface of the wafer. A wafer holder on an end of the planetary arm may be driven in rotation while the planetary arm executes oscillatory motion at a selected tilt angle relative to an incident ion beam. A slit support plate provides controllable exposure of the wafer to the incident beam. Embodiments are suitable for use in wafer deposition machines and/or wafer etching machines.

Abstract translation: 耦合到倾斜致动器的行星臂沿着弧形路径移动晶片振荡运动，以将晶片的表面暴露于入射离子束，用于在晶片的表面上沉积和/或蚀刻处理薄膜结构。 行星臂的端部上的晶片保持架可以被旋转驱动，同时行星臂相对于入射离子束以选定的倾斜角度执行振荡运动。 狭缝支撑板提供晶片对入射光束的可控曝光。 实施例适用于晶片沉积机和/或晶片蚀刻机。

公开(公告)号：US20150294885A1

公开(公告)日：2015-10-15

申请号：US14747491

申请日：2015-06-23

Applicant: FEI Company

Inventor： Chad Rue ,  Clive D. Chandler

IPC: H01L21/67 ,  H01J37/32

CPC classification number: H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

Abstract translation: 一种用于使用聚焦离子束系统改进半导体器件的平面去除处理的方法和系统。 该方法包括限定要去除的目标区域，所述目标区域包括半导体器件的混合铜和电介质层的至少一部分; 将前体气体引向目标区域; 并且在存在前体气体的情况下将聚焦离子束引向目标区域，从而去除第一混合铜和电介质层的至少一部分，并在研磨的目标区域中产生均匀光滑的地板。 前体气体导致聚焦离子束以与电介质基本相同的速率研磨铜。 在优选的实施方案中，前体气体包括硝基乙酸甲酯。 在替代实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙酸丙酯，硝基乙酸乙酯，甲氧基乙酸甲酯或甲氧基乙酰氯。

公开(公告)号：US20140353151A1

公开(公告)日：2014-12-04

申请号：US14370763

申请日：2012-12-25

Applicant: Hitachi High-Technologies Corporation

Inventor： Asako Kaneko ,  Hisayuki Takasu ,  Hirobumi Mutou

IPC: H01J37/305 ,  H01J37/16 ,  H01J37/20 ,  H01J37/18

CPC classification number: H01J37/3053 ,  C23C8/40 ,  C23C14/505 ,  C23C16/4586 ,  H01J37/16 ,  H01J37/18 ,  H01J37/20 ,  H01J2237/002 ,  H01J2237/2001 ,  H01J2237/2002 ,  H01J2237/28 ,  H01J2237/3151 ,  H01J2237/31749

Abstract: The purpose of the present invention is to provide a charged particle beam irradiation apparatus of a relatively simple structure which performs cooling on a sample or a sample stage. An aspect of the present invention comprises: a charged particle source; a sample stage; and a driving mechanism that comprises a transmission mechanism which transmits a driving force to move the sample stage. The charged particle beam irradiation apparatus comprises a container capable of accommodating an ionic liquid (12), wherein the container is disposed in a vacuum chamber. When the ionic liquid (12) is accommodated in the container, at least a portion of the transmission mechanism is provided at a position submerged in the ionic liquid (12).

Abstract translation: 本发明的目的是提供一种对样品或样品台进行冷却的相对简单结构的带电粒子束照射装置。 本发明的一个方面包括：带电粒子源; 样品台 以及包括传递驱动力以移动样品台的传动机构的驱动机构。 带电粒子束照射装置包括能够容纳离子液体（12）的容器，其中容器设置在真空室中。 当离子液体（12）容纳在容器中时，传播机构的至少一部分设置在浸没在离子液体（12）中的位置处。