公开(公告)号：US20240096584A1

公开(公告)日：2024-03-21

申请号：US18368789

申请日：2023-09-15

Applicant: JEOL Ltd.

Inventor： Munehiro Kozuka ,  Tsutomu Negishi ,  Tatsuhito Kimura

IPC: H01J37/09 ,  H01J37/305

CPC classification number: H01J37/09 ,  H01J37/305

Abstract: There is provided a sample milling apparatus capable of mitigating heat damage to a sample. The apparatus mills the sample by irradiating it with an ion beam and includes: an ion source for emitting the ion beam; and a shield plate placed on the sample and covering a part of the sample. The shield plate includes: a shield surface on which the ion beam impinges; and a bottom surface connected to the shield surface and forming a bottom edge. The bottom surface is smaller in area than the shield surface.

公开(公告)号：US11934096B2

公开(公告)日：2024-03-19

申请号：US17288321

申请日：2019-10-23

Applicant: KYOCERA Corporation

Inventor： Shigenobu Furukawa ,  Koji Akashi

IPC: G03F1/78 ,  G03F7/20 ,  H01J37/305

CPC classification number: G03F1/78 ,  G03F7/2002 ,  H01J37/305

Abstract: A frame member for an electron beam lithography device of the present disclosure includes a frame body comprising sapphire or aluminum oxide-based ceramics having an open porosity of 0.2% or less and a conductive film disposed at least on a main surface of an electron gun side of the frame body.

公开(公告)号：US20240038486A1

公开(公告)日：2024-02-01

申请号：US18298031

申请日：2023-04-10

Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.

Inventor： Yu-Ching Chiu ,  Chih-Kuang Kao ,  Huei-Wen Yang

IPC: H01J37/248 ,  H01J37/305 ,  H01J37/30 ,  H01J37/28

CPC classification number: H01J37/248 ,  H01J37/305 ,  H01J37/3005 ,  H01J37/28 ,  H01J2237/206 ,  H01J2237/31749 ,  H01J2237/2802 ,  H01J2237/20207 ,  H01J2237/20214 ,  H01J2237/024

Abstract: An apparatus for observing a sample using a charged particle beam includes an ion beam column configured to generate and direct an ion beam, an electron beam column configured to generate and direct an electron beam, a vacuum chamber for housing the sample, and a probe positioned in the vacuum chamber. The probe is configured to provide electrical connection between the sample and a power supply.

公开(公告)号：US20230375616A1

公开(公告)日：2023-11-23

申请号：US17749815

申请日：2022-05-20

Applicant: Yangtze Memory Technologies Co., Ltd.

Inventor： Lin QI ,  Xiaoqiong DU ,  Juan WANG ,  Jinyu TONG

IPC: G01R31/28 ,  H01J37/305 ,  H01J37/30 ,  H01J37/317

CPC classification number: G01R31/2898 ,  H01J37/305 ,  H01J37/3005 ,  H01J37/3178 ,  H01J2237/31749

Abstract: A structure for performing analysis includes a first opening formed on a back side of a substrate and passing through the substrate, a second opening connected with a bottom of the first opening and penetrating into a first dielectric layer formed on a front side of the substrate, a first conductive layer formed on a sidewall of the second opening and a contact element in the first dielectric layer, and a second conductive layer formed on a second dielectric layer. The first conductive layer contacts the second conductive layer electrically.

公开(公告)号：US20190252152A1

公开(公告)日：2019-08-15

申请号：US16342859

申请日：2017-10-18

Applicant: RELIANCE PRECISION LIMITED

Inventor： Nigel CROSLAND ,  Andrew MCCLELLAND ,  Phil HOYLE ,  Ian LAIDLER

IPC: H01J37/305 ,  H01J37/147 ,  H01J37/302 ,  B22F3/105

CPC classification number: H01J37/305 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2003/1057 ,  H01J37/1472 ,  H01J37/1475 ,  H01J37/302 ,  H01J37/3023 ,  H01J2237/30483 ,  Y02P10/295

Abstract: A method of forming a product using additive layer manufacture is provided. The method comprises forming the product as a series of layers, each layer being formed by fusing powder deposited as a powder bed by scanning the powder bed using a charged particle beam to form a desired layer shape. For each layer, the powder is fused by melting successive areas of the powder bed by scanning the charged particle beam using a combination of a relatively long-range deflector and a relatively short-range deflector, wherein the relatively long-range deflector deflects the charged particle beam over a larger deflection angle than the short-range deflector. Also provided are a corresponding charged particle optical assembly, and an additive layer manufacturing apparatus.

公开(公告)号：US20180277335A1

公开(公告)日：2018-09-27

申请号：US15547315

申请日：2015-01-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Toru IWAYA ,  Hisayuki TAKASU ,  Sakae KOUBORI ,  Atsushi KAMINO ,  Kento HORINOUCHI

IPC: H01J37/20 ,  H01J37/26 ,  H01J37/31

CPC classification number: H01J37/20 ,  H01J37/261 ,  H01J37/305 ,  H01J37/31

Abstract: The present invention relates to adjustment of a mask position by driving an R-axis of an electron microscope in order to adjust the mask position with high accuracy while performing observation by the electron microscope without providing a heat generation source inside the electron microscope. The R-axis originally exists in a sample chamber of the electron microscope, which enables control with high accuracy. The R-axis driving of a sample stage can be substituted by raster rotation, therefore, the mask position can be adjusted with high accuracy while performing observation by the electron microscope according to the present invention.

公开(公告)号：US20180211812A1

公开(公告)日：2018-07-26

申请号：US15744769

申请日：2016-07-13

Applicant: NATIONAL UNIVERSITY CORPORATION NARA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Fumihiko MATSUI ,  Hiroyuki MATSUDA

IPC: H01J37/05 ,  H01J37/075 ,  H01J37/09 ,  H01J37/12 ,  H01J37/244 ,  H01J37/252 ,  H01J37/305 ,  H01J43/24

CPC classification number: H01J37/05 ,  G01N23/227 ,  H01J37/075 ,  H01J37/09 ,  H01J37/12 ,  H01J37/244 ,  H01J37/252 ,  H01J37/305 ,  H01J43/24 ,  H01J49/06 ,  H01J49/488

Abstract: Provided is a compact device which captures, over a large solid angle range, electrically charged particles emitted from a point source and parallelizes the trajectories of said charged particles. The present invention is configured from: an electrostatic lens comprising a plurality of axisymmetric electrodes (10-14) and an axisymmetric aspherical mesh (2) which has a surface that is concave away from the point source; and a flat collimator plate (3) positioned coaxially with the electrostatic lens. The acceptance angle for the electrically charged particles generated from a point source (7) is ±30° or greater. The shape of the aspherical mesh (2), and the potentials and the positions of a ground electrode (10) and application electrodes (11-15) are adjusted so that the trajectories of the electrically charged particles are substantially parallelized by the electrostatic lens. The electrostatic lens and the flat collimator plate are positioned on a common axis.

公开(公告)号：US10020200B1

公开(公告)日：2018-07-10

申请号：US14966165

申请日：2015-12-11

Applicant: Multibeam Corporation

Inventor： Kevin M. Monahan ,  Theodore A. Prescop ,  Michael C. Smayling ,  David K. Lam

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/308 ,  H01L21/66

CPC classification number: H01L21/3065 ,  B81C1/00373 ,  B81C2201/0143 ,  B81C2201/0188 ,  C23C14/48 ,  C23C16/047 ,  C23C16/48 ,  C23C16/486 ,  C23C16/487 ,  H01J37/05 ,  H01J37/06 ,  H01J37/08 ,  H01J37/228 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J37/305 ,  H01J37/3053 ,  H01J37/3056 ,  H01J37/3172 ,  H01J37/3174 ,  H01J37/3177 ,  H01J37/3178 ,  H01J2237/004 ,  H01J2237/0635 ,  H01J2237/1501 ,  H01J2237/24592 ,  H01J2237/30466 ,  H01J2237/30472 ,  H01J2237/31708 ,  H01J2237/31732 ,  H01J2237/31735 ,  H01J2237/31737 ,  H01J2237/3174 ,  H01J2237/31749 ,  H01L21/0228 ,  H01L21/0262 ,  H01L21/26 ,  H01L21/308 ,  H01L21/3085 ,  H01L22/12 ,  H01L22/20 ,  H01L22/26

Abstract: Methods and systems for direct atomic layer etching and deposition on or in a substrate using charged particle beams. Electrostatically-deflected charged particle beam columns can be targeted in direct dependence on the design layout database to perform atomic layer etch and atomic layer deposition, expressing pattern with selected 3D-structure. Reducing the number of process steps in patterned atomic layer etch and deposition reduces manufacturing cycle time and increases yield by lowering the probability of defect introduction. Local gas and photon injectors and detectors are local to corresponding columns, and support superior, highly-configurable process execution and control.

公开(公告)号：US09937584B2

公开(公告)日：2018-04-10

申请号：US14470190

申请日：2014-08-27

Applicant: Tyco Electronics AMP GmbH

Inventor： Helge Schmidt ,  Eva Henschel ,  Soenke Sachs

IPC: B23K15/00 ,  B23K15/08 ,  H01J37/305 ,  H01R43/16 ,  B23K15/06 ,  B23K101/34 ,  B23K101/38 ,  B23K103/12

CPC classification number: B23K15/0006 ,  B23K15/002 ,  B23K15/0033 ,  B23K15/06 ,  B23K15/08 ,  B23K2101/34 ,  B23K2101/38 ,  B23K2103/12 ,  H01J37/305 ,  H01J2237/31 ,  H01R43/16

Abstract: A method for producing an electrical component is provided. The method includes steps of providing a continuous strip material and separating a section from the continuous strip material using an electron beam.

公开(公告)号：US20170047198A1

公开(公告)日：2017-02-16

申请号：US15306510

申请日：2014-05-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Kento HORINOUCHI ,  Atsushi KAMINO ,  Toru IWAYA ,  Hisayuki TAKASU

IPC: H01J37/305 ,  H01J37/20 ,  G01N1/32

CPC classification number: H01J37/305 ,  G01N1/32 ,  H01J37/09 ,  H01J37/20 ,  H01J37/3053 ,  H01J2237/045 ,  H01J2237/3151

Abstract: Provided is a technology for suppressing a heat rise in a sample, the heat rise being generated due to ion beam irradiation at a low acceleration voltage. A blocking plate, which is different from a mask, is disposed in front of a sample. The blocking plate has an opening that overlaps a processing surface, and ion beams pass only through the opening of the blocking plate, and in the areas excluding the opening, the ion beams are blocked by the blocking plate, and the sample is not irradiated thereby. Furthermore, the heat rise in the sample is further suppressed by cooling the blocking plate.

Abstract translation: 本发明提供一种抑制试样的热升高的技术，由于在低加速电压下的离子束照射而产生热量上升。 与样品不同的阻挡板被放置在样品的前面。 阻挡板具有与处理面重叠的开口，离子束仅穿过阻挡板的开口，并且在除开口以外的区域中，离子束被阻挡板阻挡，并且样品不被照射 。 此外，通过冷却阻挡板进一步抑制样品中的热升高。