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    Environmental scanning electron microscope (ESEM/SEM) gas injection apparatus with anode integrated with gas concentrating structure
    4.
    发明授权
    Environmental scanning electron microscope (ESEM/SEM) gas injection apparatus with anode integrated with gas concentrating structure 有权
    环境扫描电子显微镜（ESEM / SEM）气体注入装置与阳极集成结合

    公开(公告)号：US09070533B2

    公开(公告)日：2015-06-30

    申请号：US13954838

    申请日：2013-07-30

    Applicant: FEI Company

    Inventor： Marc Castagna ,  Clive D. Chandler ,  Wayne Kurowski ,  Daniel Woodrow Phifer, Jr.

    IPC: H01J37/18 ,  H01J37/26 ,  H01J37/28

    CPC classification number: H01J37/26 ,  H01J37/18 ,  H01J37/28 ,  H01J2237/0044 ,  H01J2237/006 ,  H01J2237/24445

    Abstract: A gas injection system provides a local region at the sample surface that has sufficient gas concentration to be ionized by secondary electrons to neutralize charged on the sample surface. In some embodiments, a gas concentration structure concentrates the gas near the surface. An optional hole in the gas concentration structure allows the charged particle beam to impact the interior of a shrouded region. In some embodiments, an anode near the surface increases the number of ions that return to the work piece surface for charge neutralization, the anode in some embodiments being a part of the gas injection system and in some embodiments being a separate structure.

    Abstract translation: 气体注入系统在样品表面处提供具有足够气体浓度的局部区域，以通过二次电子电离以中和样品表面上的带电。 在一些实施例中，气体浓度结构将气体靠近表面集中。 气体浓度结构中的可选孔允许带电粒子束冲击被覆盖区域的内部。 在一些实施例中，表面附近的阳极增加返回到工件表面以进行电荷中和的离子的数量，在一些实施例中，阳极是气体注入系统的一部分，并且在一些实施例中为独立的结构。

    ADAPTIVE CONTROL FOR CHARGED PARTICLE BEAM PROCESSING
    7.
    发明申请
    ADAPTIVE CONTROL FOR CHARGED PARTICLE BEAM PROCESSING 审中-公开
    充电颗粒光束处理的自适应控制

    公开(公告)号：US20170002467A1

    公开(公告)日：2017-01-05

    申请号：US15201590

    申请日：2016-07-04

    Applicant: FEI Company

    Inventor： Marcus Straw ,  Chad Rue ,  Steven Randolph ,  Aurelien Philippe Jean Maclou Botman ,  Clive D. Chandler ,  Mark W. Utlaut

    IPC: C23C16/48 ,  C23C16/56 ,  C23C16/52

    CPC classification number: C23C16/52 ,  C23C16/047 ,  C23C16/4418 ,  H01J37/3023 ,  H01J37/3026 ,  H01J37/304 ,  H01J37/317 ,  H01J37/3178 ,  H01J2237/30416 ,  H01J2237/30455 ,  H01J2237/30472 ,  H01J2237/31735 ,  H01J2237/31749

    Abstract: An improved process control for a charged beam system is provided that allows the capability of accurately producing complex two and three dimensional structures from a computer generated model in a material deposition process. The process control actively monitors the material deposition process and makes corrective adjustments as necessary to produce a pattern or structure that is within an acceptable tolerance range with little or no user intervention. The process control includes a data base containing information directed to properties of a specific pattern or structure and uses an algorithm to instruct the beam system during the material deposition process. Feedback through various means such as image recognition, chamber pressure readings, and EDS signal can be used to instruct the system to make automatic system modifications, such as, beam and gas parameters, or other modifications to the pattern during a material deposition run.

    Abstract translation: 提供了一种用于带电束系统的改进的过程控制，其允许在材料沉积过程中从计算机生成的模型精确地产生复杂的二维和三维结构的能力。 过程控制主动监测材料沉积过程，并根据需要进行校正调整，以产生在可接受的公差范围内，甚至无需用户干预的图案或结构。 过程控制包括包含针对特定模式或结构的属性的信息的数据库，并且使用算法在材料沉积过程期间指示束系统。 可以使用诸如图像识别，室压读数和EDS信号的各种手段的反馈来指示系统在材料沉积运行期间进行自动系统修改，例如光束和气体参数或对图案的其它修改。

    Precursor for planar deprocessing of semiconductor devices using a focused ion beam
    8.
    发明授权
    Precursor for planar deprocessing of semiconductor devices using a focused ion beam 有权
    使用聚焦离子束的半导体器件的平面去加工的前体

    公开(公告)号：US09064811B2

    公开(公告)日：2015-06-23

    申请号：US13910761

    申请日：2013-06-05

    Applicant: FEI Company

    Inventor： Chad Rue ,  Clive D. Chandler

    IPC: B44C1/22 ,  H01L21/461 ,  H01L21/302 ,  C23C14/32 ,  H01L21/3065 ,  H01J37/305 ,  H01L21/3213 ,  H01L21/67

    CPC classification number: H01L21/67069 ,  H01J37/3056 ,  H01J37/3233 ,  H01J37/3244 ,  H01J2237/3151 ,  H01J2237/31744 ,  H01J2237/31749 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31105 ,  H01L21/31116 ,  H01L21/32131 ,  H01L21/32136 ,  H01L21/76892

    Abstract: A method and system for improved planar deprocessing of semiconductor devices using a focused ion beam system. The method comprises defining a target area to be removed, the target area including at least a portion of a mixed copper and dielectric layer of a semiconductor device; directing a precursor gas toward the target area; and directing a focused ion beam toward the target area in the presence of the precursor gas, thereby removing at least a portion of a first mixed copper and dielectric layer and producing a uniformly smooth floor in the milled target area. The precursor gas causes the focused ion beam to mill the copper at substantially the same rate as the dielectric. In a preferred embodiment, the precursor gas comprises methyl nitroacetate. In alternative embodiments, the precursor gas is methyl acetate, ethyl acetate, ethyl nitroacetate, propyl acetate, propyl nitroacetate, nitro ethyl acetate, methyl methoxyacetate, or methoxy acetylchloride.

    Abstract translation: 一种用于使用聚焦离子束系统改进半导体器件的平面去除处理的方法和系统。 该方法包括限定要去除的目标区域，所述目标区域包括半导体器件的混合铜和电介质层的至少一部分; 将前体气体引向目标区域; 并且在存在前体气体的情况下将聚焦离子束引向目标区域，从而去除第一混合铜和电介质层的至少一部分，并在研磨的目标区域中产生均匀光滑的地板。 前体气体导致聚焦离子束以与电介质基本相同的速率研磨铜。 在优选的实施方案中，前体气体包括硝基乙酸甲酯。 在替代实施方案中，前体气体是乙酸甲酯，乙酸乙酯，硝基乙酸乙酯，乙酸丙酯，硝基乙酸丙酯，硝基乙酸乙酯，甲氧基乙酸甲酯或甲氧基乙酰氯。

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