公开(公告)号：US12106943B2

公开(公告)日：2024-10-01

申请号：US17329883

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Jay R. Wallace ,  Simon Ruffell ,  Kevin R. Anglin ,  Tyler Rockwell ,  Christopher Campbell ,  Kevin M. Daniels ,  Richard J. Hertel ,  Kevin T. Ryan

IPC: H01J37/32

CPC classification number: H01J37/32642 ,  H01J37/32467 ,  H01J37/32724

Abstract: A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

公开(公告)号：US20220384156A1

公开(公告)日：2022-12-01

申请号：US17329883

申请日：2021-05-25

Applicant: Applied Materials, Inc.

Inventor： Jay R. Wallace ,  Simon Ruffell ,  Kevin R. Anglin ,  Tyler Rockwell ,  Christopher Campbell ,  Kevin M. Daniels ,  Richard J. Hertel ,  Kevin T. Ryan

IPC: H01J37/32

Abstract: A substrate holder assembly including a substrate platen, the substrate platen disposed to support a substrate at a substrate position, a halo ring, the halo ring being disposed around the substrate position, and an outer halo being disposed around the halo ring and defining a first aperture, wherein the outer halo is disposed to engage the halo ring, the halo ring being disposed at least partially within the first aperture, the halo ring defining a second aperture, concentrically positioned within the first aperture, wherein the outer halo and the halo ring are formed at least partially of silicon, silicon carbide, doped silicon, quartz, and ceramic.

公开(公告)号：US20220246397A1

公开(公告)日：2022-08-04

申请号：US17167416

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell ,  Kevin Verrier

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

公开(公告)号：US11640909B2

公开(公告)日：2023-05-02

申请号：US16676857

申请日：2019-11-07

Applicant: APPLIED Materials, Inc.

Inventor： Kevin Anglin ,  Simon Ruffell

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/311 ,  H01J37/32 ,  H01L21/67

Abstract: A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.

公开(公告)号：US10665421B2

公开(公告)日：2020-05-26

申请号：US16156434

申请日：2018-10-10

Applicant: APPLIED Materials, Inc.

Inventor： Tsung-Liang Chen ,  Kevin R. Anglin ,  Simon Ruffell

IPC: H01J37/20 ,  H01J37/08 ,  H01J37/244

Abstract: A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.

公开(公告)号：US11664193B2

公开(公告)日：2023-05-30

申请号：US17167416

申请日：2021-02-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell ,  Kevin Verrier

IPC: H01J37/305 ,  H01J37/304 ,  H01J37/32

CPC classification number: H01J37/3053 ,  H01J37/304 ,  H01J37/32724 ,  H01J2237/0203 ,  H01J2237/3151

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.

公开(公告)号：US20210343550A1

公开(公告)日：2021-11-04

申请号：US16865860

申请日：2020-05-04

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell

IPC: H01L21/673 ,  H01L21/67 ,  H01L21/02

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

公开(公告)号：US20200118790A1

公开(公告)日：2020-04-16

申请号：US16156434

申请日：2018-10-10

Applicant: APPLIED Materials, Inc.

Inventor： Tsung-Liang Chen ,  Kevin R. Anglin ,  Simon Ruffell

IPC: H01J37/244 ,  H01J37/20

Abstract: A system for determining various parameters of an ion beam is disclosed. A test workpiece may be modified to incorporate a detection pattern. The detection pattern may be configured to measure the height of the ion beam, the uniformity of the ion beam, or the central angle of the ion beam. In certain embodiments, the amount of current striking the detection pattern may be measured using an optical emission spectrometer (OES) system. In other embodiments, a power supply used to bias the workpiece may be used to measure the amount of current striking the detection pattern. Alternative, the detection patterns may be incorporated into the workpiece holder.

公开(公告)号：US20230238264A1

公开(公告)日：2023-07-27

申请号：US18129161

申请日：2023-03-31

Applicant: Applied Materials, Inc.

Inventor： Kevin R. Anglin ,  Simon Ruffell

IPC: H01L21/673 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/673 ,  H01L21/02694 ,  H01L21/67248

Abstract: A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a plurality of independently controlled thermal zones so that the temperature of different regions of the workpiece may be separately controlled. In certain embodiments, etch rate uniformity may be a function of distance from the center of the workpiece, also referred to as radial non-uniformity. Further, when the workpiece is scanned, there may also be etch rate uniformity issues in the translated direction, referred to as linear non-uniformity. The present workpiece holder comprises a plurality of independently controlled thermal zones to compensate for both radial and linear etch rate non-uniformity.

公开(公告)号：US20230223269A1

公开(公告)日：2023-07-13

申请号：US18185638

申请日：2023-03-17

Applicant: APPLIED Materials, Inc.

Inventor： Kevin Anglin ,  Simon Ruffell

IPC: H01J37/147 ,  B05D1/00

CPC classification number: H01J37/1478 ,  B05D1/62 ,  H01J2237/1506

Abstract: A method of patterning a substrate. The method may include providing a cavity in a layer, disposed on the substrate, the cavity having a first length along a first direction and a first width along a second direction, perpendicular to the first direction, and wherein the layer has a first height along a third direction, perpendicular to the first direction and the second direction. The method may include depositing a sacrificial layer over the cavity in a first deposition procedure; and directing angled ions to the cavity in a first exposure, wherein the cavity is etched, and wherein after the first exposure, the cavity has a second length along the first direction, greater than the first length, and wherein the cavity has a second width along the second direction, no greater than the first width.