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    Composite backing plate for a sputtering target
    2.
    发明授权
    Composite backing plate for a sputtering target 失效
    用于溅射靶的复合背板

    公开(公告)号：US5879524A

    公开(公告)日：1999-03-09

    申请号：US608857

    申请日：1996-02-29

    申请人： Steven Hurwitt ,  Ira Reiss

    发明人： Steven Hurwitt ,  Ira Reiss

    IPC分类号： C23C14/34 ,  H01J37/34

    CPC分类号： H01J37/3435 ,  C23C14/3407

    摘要： A composite backing plate (34) for a backing plate-target assembly (41) having a core of structural material (36) with a front face (42) and/or a rear face (44) of a different material laminated thereto. The composite backing plate (35) has the desired mechanical properties of a solid copper backing plate, for example, strength and stiffness, but is preferably less than half the density of a solid copper backing plate. The core material is preferably aluminum; the front face is preferably copper; and the rear face is preferably either copper or an organic material.

    摘要翻译： 一种用于背板 - 目标组件（41）的复合背板（34），其具有结构材料芯（36），其具有层压在其上的不同材料的前表面（42）和/或后表面（44）。 复合背板（35）具有固体铜背板的期望的机械性能，例如强度和刚度，但优选小于实心铜背板的密度的一半。 芯材优选为铝; 前表面最好是铜; 后表面优选为铜或有机材料。

    Wafer holder and clamping ring therefor for use in a deposition chamber
    4.
    发明授权
    Wafer holder and clamping ring therefor for use in a deposition chamber 有权
    晶片支架和夹紧环用于沉积室

    公开(公告)号：US06258228B1

    公开(公告)日：2001-07-10

    申请号：US09227911

    申请日：1999-01-08

    申请人： Ira Reiss

    发明人： Ira Reiss

    IPC分类号： C23C1434

    CPC分类号： H01L21/68721 ,  H01L21/68728

    摘要： Warping of a clamping ring, by which a series of semiconductor wafers is held to a wafer holder for vapor deposition of coatings onto the wafers, is retarded by providing a clamping ring formed of the material having a coefficient of thermal expansion that is approximately the same as or close to that of the coating material being deposited onto the wafers. Preferably also, the material of which the ring is formed has a high modulus of elasticity, high thermal conductivity and a high yield strength. For the deposition of tantalum and gold, which is useful for providing backside thermal conductivity on semiconductor wafers, a clamping ring of molybdenum is preferred. The onset of excessive warping is delayed by replacing clamping rings with clamping rings formed of a material having a thermal expansion coefficient closer to that of the material to be deposited, and preferably having the other preferred properties. Preferably, the clamping ring is one having a generally circular opening that is slightly smaller than the wafers to be clamped and that has a flat edge on the inner edge of the ring corresponding to the orientation flat found on the outer edge of an industry standard wafer, so that the ring engages the wafer during clamping around the entire outer rim of the wafer. A ring having a small number of discrete mounting points for spring attachment to the holder, and having a set of latches connected thereto, is preferred.

    摘要翻译： 将一系列半导体晶片保持在晶片保持器上用于气相沉积到晶片上的夹持环的翘曲通过提供由具有大致相同的热膨胀系数的材料形成的夹紧环来延迟 与被沉积在晶片上的涂层材料相同或接近。 优选地，形成环的材料具有高弹性模量，高导热性和高屈服强度。 对于用于在半导体晶片上提供背面导热性的钽和金的沉积，优选钼的夹紧环。 通过用具有更接近待沉积材料的热膨胀系数的材料形成的夹紧环替换夹紧环，并且优选地具有其它优选的性质来延迟过度翘曲的开始。 优选地，夹紧环是具有大致圆形开口的夹紧环，其稍微小于待夹紧的晶片，并且在环的内边缘上具有对应于在工业标准晶片的外边缘上找到的取向平面的平坦边缘 ，使得环在夹持在晶片的整个外缘周围时与所述晶片接合。 具有少量用于弹簧连接到保持器的离散安装点并且具有与其连接的一组闩锁的环的环是优选的。

    Apparatus for thermal control of variously sized articles in vacuum
    5.
    发明授权
    Apparatus for thermal control of variously sized articles in vacuum 失效
    用于真空中各种尺寸物品的热控制的装置

    公开(公告)号：US06183523B2

    公开(公告)日：2001-02-06

    申请号：US08810359

    申请日：1997-03-03

    申请人： Steven Hurwitt ,  Ira Reiss

    发明人： Steven Hurwitt ,  Ira Reiss

    IPC分类号： H01L2100

    CPC分类号： H01L21/67109 ,  H01J2237/2001 ,  H01L21/68785 ,  Y10T29/41

    摘要： A substrate support platform has a substrate engaging surface which defines a first channel for introducing and distributing a thermal transfer gas to a first region of the engaging surface, and a second channel, nonintersecting with the first channel, for introducing and distributing a thermal transfer gas to a second region of the engaging surface. A gas delivery system is independently connected between a gas source and the first and second channels, for independently providing (via valved connections) a thermal transfer gas to the first and second channels, so that gas delivery may be limited to one of the channels, or gas may be delivered to both of the channels in case a substrate is placed over either or both of the associated regions. A pressure measuring device is independently coupled to each of the channels via measuring ports, permitting measurement and control of gas pressure from the gas source.

    摘要翻译： 基板支撑平台具有基板接合表面，该基板接合表面限定用于将热传递气体引入和分配到接合表面的第一区域的第一通道，以及与第一通道不间接的第二通道，用于引入和分配热传递气体 到达接合表面的第二区域。 气体输送系统独立地连接在气体源和第一和第二通道之间，用于独立地将热转移气体（通过阀连接）提供给第一和第二通道，使得气体输送可以限于通道之一， 或者在将衬底放置在相关联的区域中的任一个或两者上的情况下，气体可以被传送到两个通道。 压力测量装置通过测量端口独立地连接到每个通道，允许测量和控制来自气源的气体压力。

    Magnetic device for rotating a substrate
    6.
    发明授权
    Magnetic device for rotating a substrate 失效
    用于旋转衬底的磁性装置

    公开(公告)号：US5795448A

    公开(公告)日：1998-08-18

    申请号：US570220

    申请日：1995-12-08

    申请人： Steven Hurwitt ,  Ira Reiss ,  Marian Zielinski ,  Swie-In Tan

    发明人： Steven Hurwitt ,  Ira Reiss ,  Marian Zielinski ,  Swie-In Tan

    IPC分类号： C23C14/34 ,  C23C14/50 ,  H01L21/00 ,  H01L21/203 ,  H01L21/285

    CPC分类号： H01L21/6715 ,  C23C14/505

    摘要： A device for rotating a substrate in a complex motion within a chamber which during a sputtering process. The device includes a first support element positioned within the chamber. The first support element includes a first rotating structure which is affixed between a platform for supporting the substrate and a first magnet positioned adjacent to the inner wall surface. Further, the first rotating structure is adapted to rotate about a first axis. The device further includes a second support element positioned outside of the chamber. The second support element includes a second rotating structure affixed between a planet gear adapted for engagement with a sun gear outside of the chamber and a second magnet positioned adjacent the outer wall surface and spaced apart from the first magnet. This causes the formation of a magnetic bond between the first and second magnets. Further, the second rotating structure is adapted to rotate about the first axis thereby enabling the first and second rotating structures to rotate in unison about the first axis. In addition, the device includes a drive element affixed to the first and second support elements, wherein rotation of the drive element causes a first rotation of the first and second rotating elements and thus the substrate about a center axis. This also causes a second rotation wherein the engagement of the sun gear and the planet gear causes simultaneous rotation of the substrate about the first axis.

    摘要翻译： 一种用于在溅射过程中在腔室内以复杂运动旋转衬底的装置。 该装置包括位于腔室内的第一支撑元件。 第一支撑元件包括第一旋转结构，其被固定在用于支撑基板的平台和邻近内壁表面定位的第一磁体之间。 此外，第一旋转结构适于围绕第一轴线旋转。 该装置还包括位于腔室外部的第二支撑元件。 第二支撑元件包括固定在适于与室外的太阳轮啮合的行星齿轮之间的第二旋转结构，以及邻近外壁表面定位并与第一磁体隔开的第二磁体。 这导致在第一和第二磁体之间形成磁性结合。 此外，第二旋转结构适于围绕第一轴线旋转，从而使得第一和第二旋转结构能够围绕第一轴线一致地旋转。 此外，该装置包括固定到第一和第二支撑元件的驱动元件，其中驱动元件的旋转引起第一和第二旋转元件的第一旋转，从而使基板围绕中心轴线进行第一旋转。 这也导致第二旋转，其中太阳齿轮和行星齿轮的接合导致基板围绕第一轴线的同时旋转。

    Physical vapor deposition apparatus for depositing thin multilayer films and methods of depositing such films
    7.
    发明申请
    Physical vapor deposition apparatus for depositing thin multilayer films and methods of depositing such films 审中-公开
    用于沉积薄多层膜的物理气相沉积设备和沉积这种膜的方法

    公开(公告)号：US20060054494A1

    公开(公告)日：2006-03-16

    申请号：US10943115

    申请日：2004-09-16

    申请人： Ira Reiss

    发明人： Ira Reiss

    IPC分类号： C23C14/00 ,  C23C14/32

    CPC分类号： H01J37/3447 ,  C23C14/352 ,  C23C14/505

    摘要： A compact and economical physical vapor deposition (PVD) module for depositing thin film multi-layers with extreme control of thickness, uniformity and surface smoothness. The module includes multiple deposition sources positioned in a conical cluster with confocal arrangement about a single common deposition zone that is defined by a deposition aperture and a substrate carrier with two independently controlled (rotation and scanning) substrate motions. A substrate carrier rotates the substrate at high speed and translates the substrate through the deposition zone. The module lacks a shutter for controlling the film deposition process. Methods of depositing thin film multi-layers are also described.

    摘要翻译： 一种紧凑且经济的物理气相沉积（PVD）模块，用于沉积薄膜多层，极大地控制厚度，均匀性和表面光滑度。 该模块包括多个沉积源，其定位在具有共焦排列的多个沉积源中，所述沉积源围绕由沉积孔限定的单个公共沉积区和具有两个独立控制（旋转和扫描）衬底运动的衬底载体。 衬底载体高速旋转衬底并使衬底平移通过沉积区。 该模块缺少用于控制成膜过程的快门。 还描述了沉积薄膜多层的方法。

    Method and system using power modulation for maskless vapor deposition of spatially graded thin film and multilayer coatings with atomic-level precision and accuracy
    8.
    发明授权
    Method and system using power modulation for maskless vapor deposition of spatially graded thin film and multilayer coatings with atomic-level precision and accuracy 有权
    使用功率调制的方法和系统，用于空间梯度薄膜和多层涂层的无掩模气相沉积，具有原子级精度和准确度

    公开(公告)号：US06425988B1

    公开(公告)日：2002-07-30

    申请号：US09711441

    申请日：2000-11-13

    申请人： Claude Montcalm ,  James Allen Folta ,  Swie-In Tan ,  Ira Reiss

    发明人： Claude Montcalm ,  James Allen Folta ,  Swie-In Tan ,  Ira Reiss

    IPC分类号： C23C1434

    CPC分类号： C23C14/54 ,  C23C14/543 ,  C23C14/545 ,  G02B1/10

    摘要： A method and system for producing a film (preferably a thin film with highly uniform or highly accurate custom graded thickness) on a flat or graded substrate (such as concave or convex optics), by sweeping the substrate across a vapor deposition source operated with time-varying flux distribution. In preferred embodiments, the source is operated with time-varying power applied thereto during each sweep of the substrate to achieve the time-varying flux distribution as a function of time. A user selects a source flux modulation recipe for achieving a predetermined desired thickness profile of the deposited film. The method relies on precise modulation of the deposition flux to which a substrate is exposed to provide a desired coating thickness distribution.

    摘要翻译： 通过扫描基板穿过随时间操作的气相沉积源，在平坦或渐变的基板（例如凹凸光学元件）上制造膜（优选具有高度均匀或高精度定制分级厚度的薄膜）的方法和系统 - 通量分布。 在优选实施例中，在衬底的每次扫描期间，源施加到其上的时变功率，以实现作为时间的函数的时变通量分布。 用户选择源通量调制配方以实现沉积膜的预定期望厚度分布。 该方法依赖于对衬底暴露的沉积通量的精确调制，以提供所需的涂层厚度分布。