Abstract:
A bonding tool cooling apparatus (10) provided in the vicinity of a bonding stage, including a frame (12); a cooling member (16) including a ground plate (14) having a ground surface (14a) on which a front edge surface of a bonding tool (61) is grounded, and a heat radiation fin (15) attached to an opposite surface of the ground plate (14) to the ground surface (14a), wherein the cooling member (16) is supported on the frame (12) by a support mechanism (200) so that the cooling member (16) is rotatable about two axes, i.e., an X axis extending along the ground surface (14a) and a Y axis extending along the ground surface (14a). Bonding tool cooling time can be thereby reduced.
Abstract:
A bonding apparatus, which includes: an intermediate stage; a transfer unit configured to transfer a semiconductor chip and to place the semiconductor chip on the intermediate stage; and a first bonding unit and a second bonding unit each configured to pick up the semiconductor chip from the intermediate stage, and to bond the semiconductor chip to a circuit substrate. The intermediate stage moves between a first position and a second position. The first position is a position at which the first bonding unit is allowed to pick up the semiconductor chip, and the second position is a position at which the second bonding unit is allowed to pick up the semiconductor chip. With this, it is possible to provide a bonding apparatus capable of reducing processing time per circuit substrate and suppressing an increase of a space, as well as such a bonding method.
Abstract:
A method of die bonding, the method has steps of: heating a substrate to a predetermined temperature; sucking at least one die, the at least one die with a base temperature, the base temperature being less than the predetermined temperature; the at least one die bonding on the substrate; cooling the substrate with the bonded die; and moving the substrate with the bonded die to a loading and unloading position, heating another substrate to a predetermined temperature, and repeating the said steps.
Abstract:
A bonding apparatus configured to bond substrates includes a first holder configured to vacuum-exhaust a first substrate to attract and hold the first substrate on a bottom surface thereof; a second holder disposed under the first holder and configured to vacuum-exhaust a second substrate to attract and hold the second substrate on a top surface thereof; a rotator configured to rotate the first holder and the second holder relatively; a moving device configured to move the first holder and the second holder relatively in a horizontal direction; three position measurement devices disposed at the first holder or the second holder rotated by the rotator and configured to measure a position of the first holder or the second holder; and a controller configured to control the rotator and the moving device based on measurement results of the three position measurement devices.
Abstract:
A method for fabricating a flip-chip semiconductor package. The method comprises processing a semiconductor device, for example a semiconductor chip and processing a device carrier, for example a substrate. The semiconductor device comprises bump structures formed on a surface thereof. The substrate comprises bond pads formed on a surface thereof. Processing of the semiconductor chip results in heating of the semiconductor chip to a chip process temperature. The chip process temperature melts solder portions on the bump structures Processing of the substrate results in heating of the substrate to a substrate process temperature. The method comprises spatially aligning the semiconductor chip in relation to the substrate to correspondingly align the bump structures in relation to the bump pads. The semiconductor chip is then displaced towards the substrate for abutting the bump structures of the semiconductor chip with the bond pads of the substrate to thereby form bonds therebetween. A system for performing the above method is also disclosed.
Abstract:
[Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.
Abstract:
Alignment systems, and wafer bonding alignment systems and methods are disclosed. In some embodiments, an alignment system for a wafer bonding system includes means for monitoring an alignment of a first wafer and a second wafer, and means for adjusting a position of the second wafer. The alignment system includes means for feeding back a relative position of the first wafer and the second wafer to the means for adjusting the position of the second wafer before and during a bonding process for the first wafer and the second wafer.
Abstract:
There is provided a method of bonding substrates to each other, which includes: holding a first substrate on a lower surface of a first holding part; adjusting a temperature of a second substrate by a temperature adjusting part to become higher than a temperature of the first substrate; holding the second substrate on an upper surface of a second holding part; inspecting a state of the second substrate by imaging a plurality of reference points of the second substrate with a first imaging part, measuring positions of the reference points, and comparing a measurement result with a predetermined permissible range; and pressing a central portion of the first substrate with a pressing member, bringing the central portion of the first substrate into contact with a central portion of the second substrate, and sequentially bonding the first substrate and the second substrate.
Abstract:
Provided is a flip chip mounting apparatus for mounting chips (400) to a substrate (200), and the apparatus includes at least one sectionalized mounting stage (45) divided into a heating section (452) and a non-heating section (456), the heating section being for heating a substrate (200) fixed to a front surface of the heating section, the non-heating section not heating the substrate (200) suctioned to a front surface of the non-heating section. With this, it is possible to provide an electronic-component mounting apparatus that is simple and capable of efficiently mounting a large number of electronic components.
Abstract:
Provided are a semiconductor substrate manufacturing apparatus and a substrate treating method, and more particularly, an apparatus and method for performing a reflow treating process on a semiconductor wafer. The apparatus treating apparatus includes a load port on which a carrier accommodating a substrate is seated, a substrate treating module including one process chamber or a plurality of process chambers having a treating space in which a reflow process with respect to the substrate is performed, a cleaning unit cleaning the substrate, and a substrate transfer module disposed between the load port and the substrate treating module. The substrate transfer module includes a transfer robot transferring the substrate among the load port, the substrate treating module, and the cleaning unit.