Abstract:
A bonding tool cooling apparatus (10) provided in the vicinity of a bonding stage, including a frame (12); a cooling member (16) including a ground plate (14) having a ground surface (14a) on which a front edge surface of a bonding tool (61) is grounded, and a heat radiation fin (15) attached to an opposite surface of the ground plate (14) to the ground surface (14a), wherein the cooling member (16) is supported on the frame (12) by a support mechanism (200) so that the cooling member (16) is rotatable about two axes, i.e., an X axis extending along the ground surface (14a) and a Y axis extending along the ground surface (14a). Bonding tool cooling time can be thereby reduced.
Abstract:
Provided is an electronic component mounting method including the steps of: placing an electronic component having a primary surface on which a first electrode is formed, on a circuit member having a primary surface on which a second electrode corresponding to the first electrode is formed, with solder and a bonding material including a thermosetting resin interposed between the first and second electrodes; subjecting the thermosetting resin to a first heating at a temperature lower than the melting point of the solder and thus causing the resin to cure, while pressing the electronic component against the circuit member, and then releasing pressure applied for the pressing; and subjecting the solder interposed between the first and second electrodes to a second heating with the pressure released, and thus melting the solder to electrically connect the first and second electrodes.
Abstract:
An apparatus includes a tool head configured for bonding to establish 100 or more electrical and mechanical connections between a silicon chip having a thickness of about 50 microns (μm) or smaller and a substrate, wherein 100 or more solder bumps set on a plurality of contacts on the silicon chip or a plurality of contacts on the substrate are melted by heating between the plurality of contacts of the silicon chip and the substrate, and wherein the melted solder bumps are solidified by cooling using forced convection of air flowing from around the silicon chip. The tool head includes a pyrolytic graphite sheet configured to be used in direct contact with the silicon chip, and having a thickness between about 75 μm and 125 μm.
Abstract:
A bonding apparatus includes a thermal treating unit and a bonding unit that are integrally bonded together. The thermal treating unit includes a first thermal treating plate for supporting and thermally processing a superimposed substrate. The bonding unit includes a second thermal treating plate for supporting and thermally processing the superimposed substrate processed in thermal treating unit, and a pressing mechanism for pressing the superimposed substrate against the second thermal treating plate. The first thermal treating plate includes a cooling mechanism for cooling the superimposed substrate placed on the first heating plate. Each unit can depressurize the internal atmosphere to a specified degree of vacuum. The thermal treating unit has a plurality of carrying mechanisms for conveying the wafers between the two units.
Abstract:
A bonding apparatus includes a thermal treating unit and a bonding unit that are integrally bonded together. The thermal treating unit includes a first thermal treating plate for supporting and thermally processing a superimposed substrate. The bonding unit includes a second thermal treating plate for supporting and thermally processing the superimposed substrate processed in thermal treating unit, and a pressing mechanism for pressing the superimposed substrate against the second thermal treating plate. The first thermal treating plate includes a cooling mechanism for cooling the superimposed substrate placed on the first heating plate. Each unit can depressurize the internal atmosphere to a specified degree of vacuum. The thermal treating unit has a plurality of carrying mechanisms for conveying the wafers between the two units.
Abstract:
A method for cooling electrical components on a substrate during a rework process. A block of a porous, thermally conductive material, saturated with a liquid, is positioned on an electrical component to be cooled. During the rework processing of an adjacent electrical component, the liquid in the porous, thermally conductive block vaporizes, thereby maintaining the temperature of the electrical component below its reflow temperature. A second thermally conductive block, in thermal contact with the porous, thermally conductive block, and the substrate on which the electronic component to be cooled is attached, is positioned between the electronic component to be cooled and the electronic component undergoing rework. A supply of liquid is provided to the porous, thermally conductive block to maintain the temperature of the electronic component to be cooled at a predetermined level for a specified period of time.
Abstract:
This invention relates to a connecting structure for electrically connecting an electronic part such as an LSI chip to a substrate, its production method and an electronic device using the former. The present invention is particularly useful for connecting electrically a plurality of chips, for which an absorption function of the difference of thermal expansion in a horizontal direction and capability of displacement in a vertical direction are requisite, to a substrate. Moreover, the connecting structure of the present invention can simplify the fabrication process, has high reliability and can be applied to high performance electronic appliances and apparatuses such as electronic computers.
Abstract:
A method of operating a bonding machine is provided. The method includes the steps of: (a) carrying a semiconductor element with a transfer tool; and (b) transferring the semiconductor element from the transfer tool to a bonding tool of the bonding machine without the transfer tool and the bonding tool contacting the semiconductor element at the same time.
Abstract:
Process for producing an electronic subassembly by low-temperature pressure sintering, comprising the following steps: arranging an electronic component on a circuit carrier having a conductor track, connecting the electronic component to the circuit carrier by the low-temperature pressure sintering of a joining material which connects the electronic component to the circuit carrier, characterized in that, to avoid the oxidation of the electronic component or of the conductor track, the low-temperature pressure sintering is carried out in a low-oxygen atmosphere having a relative oxygen content of 0.005 to 0.3%.
Abstract:
A substrate bonding apparatus that bonds a first substrate and a second substrate together, comprising a joining section that joins the first substrate and second substrate together aligned to each other for stacking; a detecting section that detects an uneven state on at least one of the first substrate and second substrate prior to joining by the joining section; and a determining section that determines whether the uneven state detected by the detecting section satisfies a predetermined condition, wherein the joining section does not join the first substrate and the second substrate if it is determined by the determining section that the uneven state does not satisfy the predetermined condition.