公开(公告)号：US08823166B2

公开(公告)日：2014-09-02

申请号：US12871565

申请日：2010-08-30

申请人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

发明人： Cheng-Chung Lin ,  Chung-Shi Liu ,  Meng-Wei Chou ,  Kuo Cheng Lin ,  Wen-Hsiung Lu ,  Chien Ling Hwang ,  Ying-Jui Huang ,  De-Yuan Lu

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/11 ,  H01L21/02052 ,  H01L21/32125 ,  H01L21/76873 ,  H01L21/76885 ,  H01L23/488 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2221/1084 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05073 ,  H01L2224/05541 ,  H01L2224/05573 ,  H01L2224/1111 ,  H01L2224/1132 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/11472 ,  H01L2224/11474 ,  H01L2224/11614 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/11903 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13018 ,  H01L2224/1308 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/13084 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/81191 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01019 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/0541 ,  H01L2924/07025 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/20102 ,  H01L2924/3512 ,  H01L2924/381 ,  H01L2924/3841 ,  H01L2924/0105 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/207

摘要： Apparatus and methods for providing solder pillar bumps. Pillar bump connections are formed on input/output terminals for integrated circuits by forming a pillar of conductive material using plating of a conductive material over terminals of an integrated circuit. A base portion of the pillar bump has a greater width than an upper portion. A cross-section of the base portion of the pillar bump may make a trapezoidal, rectangular or sloping shape. Solder material may be formed on the top surface of the pillar. The resulting solder pillar bumps form fine pitch package solder connections that are more reliable than those of the prior art.

摘要翻译： 用于提供焊料柱凸块的装置和方法。 通过在集成电路的端子上通过导电材料的电镀形成导电材料的支柱，在集成电路的输入/输出端子上形成支柱凸点连接。 柱状凸块的基部具有比上部更大的宽度。 柱形凸起的基部的横截面可以形成梯形，矩形或倾斜的形状。 焊料可以形成在柱的顶表面上。 所得到的焊料柱凸起形成比现有技术更可靠的细间距封装焊接连接。

公开(公告)号：US20140166194A1

公开(公告)日：2014-06-19

申请号：US14089612

申请日：2013-11-25

申请人： Taiwan Semiconductor Manufacturing Company, Ltd. ,  IMEC

发明人： Yu-Hsiang Hu ,  Chung-Shi Liu

IPC分类号： H01L23/00

CPC分类号： H01L24/06 ,  G03F7/0002 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/742 ,  H01L24/81 ,  H01L24/83 ,  H01L24/92 ,  H01L24/98 ,  H01L2224/02126 ,  H01L2224/0401 ,  H01L2224/05026 ,  H01L2224/05562 ,  H01L2224/05572 ,  H01L2224/10126 ,  H01L2224/111 ,  H01L2224/1144 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11602 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13541 ,  H01L2224/13562 ,  H01L2224/13693 ,  H01L2224/14051 ,  H01L2224/14505 ,  H01L2224/1703 ,  H01L2224/17505 ,  H01L2224/29036 ,  H01L2224/2919 ,  H01L2224/73104 ,  H01L2224/73204 ,  H01L2224/742 ,  H01L2224/81193 ,  H01L2224/81815 ,  H01L2224/81902 ,  H01L2224/81903 ,  H01L2224/83191 ,  H01L2224/83862 ,  H01L2924/00014 ,  H01L2924/12042 ,  H01L2924/15747 ,  Y10T29/49 ,  Y10T29/49014 ,  Y10T29/49117 ,  Y10T156/1028 ,  Y10T156/11 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2224/05552 ,  H01L2924/00

摘要： A method is provided for transferring a graphene sheet to metal contact bumps of a substrate that is to be used in a semiconductor device package, i.e. a stack of substrates connected by said contact bumps, e.g., copper contact bumps for which graphene forms a protective layer. An imprinter device can be used comprising an imprinter substrate, said substrate being provided with cavities, whereof each cavity is provided with a rim portion. The imprinter substrate is aligned with the substrate comprising the bumps and lowered onto said substrate so that each bump becomes enclosed by a cavity, until the rim portion of the cavities cuts through the graphene sheet, leaving graphene layer portions on top of each of bumps when the imprinter is removed. The graphene sheet is preferably attached to the substrate by imprinting it into a passivation layer surrounding the bumps.

摘要翻译： 提供了一种用于将石墨烯片材转移到用于半导体器件封装中的衬底的金属接触凸块的方法，即由所述接触凸块连接的一叠衬底，例如，石墨烯形成保护层的铜接触凸块 。 可以使用包含打印机基板的打印机装置，所述基板设置有空腔，每个空腔设置有边缘部分。 打印机基板与包括凸块的基板对准并且下降到所述基板上，使得每个凸块被空腔包围，直到空腔的边缘部分穿过石墨烯片，在每个凸块的顶部留下石墨烯层部分， 打印机被删除。 石墨烯片优选通过将其印刷到围绕凸起的钝化层中附着到基底上。

公开(公告)号：US20140131861A1

公开(公告)日：2014-05-15

申请号：US14096435

申请日：2013-12-04

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Fa Lu ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Wei-Yu Chen ,  Cheng-Ting Chen

IPC分类号： H01L23/00

CPC分类号： H01L24/13 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0362 ,  H01L2224/03831 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/1183 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H05K3/28 ,  H05K3/3478 ,  H05K3/4007 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/1082

摘要： A semiconductor device having a polymer layer and a method of fabricating the same is provided. A two-step plasma treatment for a surface of the polymer layer includes a first plasma process to roughen the surface of the polymer layer and loosen contaminants, and a second plasma process to make the polymer layer smoother or make the polymer layer less rough. An etch process may be used between the first plasma process and the second plasma process to remove the contaminants loosened by the first plasma process. In an embodiment, the polymer layer exhibits a surface roughness between about 1% and about 8% as measured by Atomic Force Microscopy (AFM) with the index of surface area difference percentage (SADP) and/or has surface contaminants of less than about 1% of Ti, less than about 1% of F, less than about 1.5% Sn, and less than about 0.4% of Pb.

摘要翻译： 提供了具有聚合物层的半导体器件及其制造方法。 用于聚合物层表面的两步等离子体处理包括使聚合物层的表面粗糙化并且使污染物松动的第一等离子体工艺，以及使聚合物层更平滑或使聚合物层变得粗糙的第二等离子体工艺。 可以在第一等离子体工艺和第二等离子体工艺之间使用蚀刻工艺，以除去由第一等离子体工艺松动的污染物。 在一个实施方案中，聚合物层通过原子力显微镜（AFM）测量的表面粗糙度在约1％至约8％之间，其表面积差异百分比（SADP）指数和/或具有小于约1的表面污染物 的Ti％，小于约1％的F，小于约1.5％的Sn和小于约0.4％的Pb。

公开(公告)号：US20130270329A1

公开(公告)日：2013-10-17

申请号：US13781927

申请日：2013-03-01

申请人： SET NORTH AMERICA, LLC

发明人： Eric Frank Schulte

IPC分类号： H05K13/04

CPC分类号： H05K13/046 ,  B32B38/0008 ,  B32B2310/14 ,  B32B2457/00 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0381 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/05568 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/1181 ,  H01L2224/11831 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13105 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/1312 ,  H01L2224/13124 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/16145 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81054 ,  H01L2224/81099 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/812 ,  H01L2224/81201 ,  H01L2224/81365 ,  H01L2224/81895 ,  H01L2224/81897 ,  H01L2225/06513 ,  H01L2225/06565 ,  H01L2924/00 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1431 ,  H01L2924/1461

摘要： Methods and systems for low-force, low-temperature thermocompression bonding. The present application teaches new methods and structures for three-dimensional integrated circuits, in which cold thermocompression bonding is used to provide reliable bonding. To achieve this, reduction and passivation steps are preferably both used to reduce native oxide on the contact metals and to prevent reformation of native oxide, preferably using atmospheric plasma treatments. Preferably the physical compression height of the elements is set to be only enough to reliably achieve at least some compression of each bonding element pair, compensating for any lack of flatness. Preferably the thermocompression bonding is performed well below the melting point. This not only avoids the deformation of lower levels which is induced by reflow techniques, but also provides a steep relation of force versus z-axis travel, so that a drastically-increasing resistance to compression helps to regulate the degree of thermocompression.

摘要翻译： 低力，低温热压接的方法和系统。 本申请教导了三维集成电路的新方法和结构，其中使用冷热压接用于提供可靠的结合。 为了实现这一点，还原和钝化步骤优选地用于减少接触金属上的自然氧化物并且防止天然氧化物的重整，优选使用大气等离子体处理。 优选地，元件的物理压缩高度被设置为仅足以可靠地实现每个结合元件对的至少一些压缩，补偿任何缺乏平坦度。 优选地，热压粘合在熔点以下进行。 这不仅避免了通过回流技术引起的较低水平的变形，而且还提供了力与z轴行程的陡峭关系，使得对压缩的显着增加的阻力有助于调节热压的程度。

公开(公告)号：US20130017681A1

公开(公告)日：2013-01-17

申请号：US13181111

申请日：2011-07-12

申请人： Reiner Willeke ,  Sören Zenner

发明人： Reiner Willeke ,  Sören Zenner

IPC分类号： H01L21/28

CPC分类号： H01L24/11 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/206 ,  B23K2101/42 ,  H01L24/13 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/119 ,  H01L2224/13022 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2224/849 ,  H01L2924/00 ,  H01L2224/05552

摘要： Generally, the subject matter disclosed herein relates to methods for forming modern sophisticated semiconductor devices, and more specifically, methods wherein substantially lead-free solder bumps may be formed above a contact layer of a semiconductor chip. One illustrative method disclosed herein includes forming a solder bump above a metallization layer of a semiconductor device, removing an oxide film from a surface of the solder bump, and, after removing the oxide film, performing a solder bump reflow process in a reducing ambient to reflow the solder bump.

摘要翻译： 通常，本文公开的主题涉及用于形成现代复杂半导体器件的方法，更具体地，其中可以在半导体芯片的接触层上方形成基本上无铅的焊料凸块的方法。 本文公开的一种说明性方法包括在半导体器件的金属化层上方形成焊料凸块，从焊料凸块的表面去除氧化膜，在除去氧化膜之后，在还原环境中进行焊料回流焊接工艺 回流焊锡凸块。

公开(公告)号：US20120208321A1

公开(公告)日：2012-08-16

申请号：US13025717

申请日：2011-02-11

申请人： David Keating Foote ,  James Donald Getty

发明人： David Keating Foote ,  James Donald Getty

IPC分类号： H01L21/461

CPC分类号： H01L24/11 ,  H01L23/3171 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L2224/02215 ,  H01L2224/03009 ,  H01L2224/0381 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05557 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11003 ,  H01L2224/11009 ,  H01L2224/1181 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/81013 ,  H01L2224/81022 ,  H01L2224/81024 ,  H01L2224/81395 ,  H01L2224/85375 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/00012 ,  H01L2924/06 ,  H01L2924/00 ,  H01L2224/05552

摘要： Methods of protecting a surface of a copper layer or a copper bonding pad on a semiconductor device against oxidation. A surface of the layer or bonding pad is cleaned by removing an oxidation layer with a plasma. A polymer layer is formed on the cleaned surface of the layer using a plasma-enhanced deposition process to protect the cleaned surface of the layer against exposure to an oxidizing gas.

摘要翻译： 保护半导体器件上的铜层或铜焊盘的表面免受氧化的方法。 通过用等离子体去除氧化层来清洁该层或接合焊盘的表面。 使用等离子体增强沉积工艺在层的清洁表面上形成聚合物层，以保护层的清洁表面免于暴露于氧化气体。

公开(公告)号：US08242011B2

公开(公告)日：2012-08-14

申请号：US13004376

申请日：2011-01-11

申请人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

发明人： Zheng-Yi Lim ,  Yi-Wen Wu ,  Wen-Hsiung Lu ,  Chih-Wei Lin ,  Tzong-Huann Yang ,  Hsiu-Jen Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/44

CPC分类号： H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/0345 ,  H01L2224/0361 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05027 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/1145 ,  H01L2224/11452 ,  H01L2224/1146 ,  H01L2224/1147 ,  H01L2224/1181 ,  H01L2224/11824 ,  H01L2224/11827 ,  H01L2224/11849 ,  H01L2224/1308 ,  H01L2224/13083 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13565 ,  H01L2224/1357 ,  H01L2224/13583 ,  H01L2224/13693 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/94 ,  H01L2924/00014 ,  H01L2924/12044 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/01047 ,  H01L2924/01024 ,  H01L2924/01028 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/01073 ,  H01L2924/01049 ,  H01L2924/0103 ,  H01L2924/01025 ,  H01L2924/01022 ,  H01L2924/01032 ,  H01L2924/01078 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/0104 ,  H01L2924/01046 ,  H01L2924/01082 ,  H01L2924/01029 ,  H01L2924/01083 ,  H01L2924/01051 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/05552

摘要： The disclosure relates to fabrication of to a metal pillar. An exemplary method of fabricating a semiconductor device comprises the steps of providing a substrate having a contact pad; forming a passivation layer extending over the substrate having an opening over the contact pad; forming a metal pillar over the contact pad and a portion of the passivation layer; forming a solder layer over the metal pillar; and causing sidewalls of the metal pillar to react with an organic compound to form a self-assembled monolayer or self-assembled multi-layers of the organic compound on the sidewalls of the metal pillar.

摘要翻译： 本公开涉及制造金属柱。 制造半导体器件的示例性方法包括以下步骤：提供具有接触焊盘的衬底; 形成在所述衬底上延伸的钝化层，所述钝化层在所述接触焊盘上具有开口; 在所述接触焊盘和所述钝化层的一部分上形成金属柱; 在金属柱上形成焊料层; 并且使金属柱的侧壁与有机化合物反应，以在金属柱的侧壁上形成自组装单层或有机化合物的自组装多层。

公开(公告)号：US20110316154A1

公开(公告)日：2011-12-29

申请号：US13230395

申请日：2011-09-12

申请人： Takeshi MATSUMOTO

发明人： Takeshi MATSUMOTO

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/03 ,  H01L23/3157 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02125 ,  H01L2224/0213 ,  H01L2224/03464 ,  H01L2224/03828 ,  H01L2224/0384 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05541 ,  H01L2224/05551 ,  H01L2224/05554 ,  H01L2224/05557 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2224/11334 ,  H01L2224/1181 ,  H01L2224/11849 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/3512 ,  H01L2924/00014 ,  H01L2224/05099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/29099 ,  H01L2224/29599

摘要： A semiconductor device includes a semiconductor substrate having a plurality of electrode pads, a protective film covering the upper surface of the semiconductor substrate and having an opening so that the electrode pad is exposed therethrough, a metal film formed on the electrode pad exposed through the opening, and a bump formed on the metal film. The metal film includes a plurality of grooves radially formed from the center thereof toward the periphery thereof.

摘要翻译： 半导体器件包括具有多个电极焊盘的半导体衬底，覆盖半导体衬底的上表面并具有开口以使得电极焊盘暴露于其中的保护膜，形成在通过开口暴露的电极焊盘上的金属膜 和在金属膜上形成的凸点。 金属膜包括从其中心向其周边径向形成的多个槽。

公开(公告)号：US20110309490A1

公开(公告)日：2011-12-22

申请号：US12818890

申请日：2010-06-18

申请人： Chen-Fa Lu ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Wei-Yu Chen ,  Cheng-Ting Chen

发明人： Chen-Fa Lu ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Wei-Yu Chen ,  Cheng-Ting Chen

IPC分类号： H01L23/498 ,  H01L21/60

CPC分类号： H01L24/13 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0362 ,  H01L2224/03831 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/1183 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H05K3/28 ,  H05K3/3478 ,  H05K3/4007 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/1082

摘要： A semiconductor device having a polymer layer and a method of fabricating the same is provided. A two-step plasma treatment for a surface of the polymer layer includes a first plasma process to roughen the surface of the polymer layer and loosen contaminants, and a second plasma process to make the polymer layer smoother or make the polymer layer less rough. An etch process may be used between the first plasma process and the second plasma process to remove the contaminants loosened by the first plasma process. In an embodiment, the polymer layer exhibits a surface roughness between about 1% and about 8% as measured by Atomic Force Microscopy (AFM) with the index of surface area difference percentage (SADP) and/or has surface contaminants of less than about 1% of Ti, less than about 1% of F, less than about 1.5% Sn, and less than about 0.4% of Pb.

摘要翻译： 提供了具有聚合物层的半导体器件及其制造方法。 用于聚合物层表面的两步等离子体处理包括使聚合物层的表面粗糙化并且使污染物松动的第一等离子体工艺，以及使聚合物层更平滑或使聚合物层变得粗糙的第二等离子体工艺。 可以在第一等离子体工艺和第二等离子体工艺之间使用蚀刻工艺，以除去由第一等离子体工艺松动的污染物。 在一个实施方案中，聚合物层通过原子力显微镜（AFM）测量的表面粗糙度在约1％至约8％之间，其表面积差异百分比（SADP）指数和/或具有小于约1的表面污染物 的Ti％，小于约1％的F，小于约1.5％的Sn和小于约0.4％的Pb。

公开(公告)号：US20110223765A1

公开(公告)日：2011-09-15

申请号：US12724396

申请日：2010-03-15

申请人： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Ryan YAMASE ,  Ji Ae PARK ,  Shamik PATEL ,  Thomas NOWAK ,  Zhengjiang "David" CUI ,  Mehul NAIK ,  Heung Lak PARK ,  Ran DING ,  Bok Hoen KIM

发明人： Nagarajan RAJAGOPALAN ,  Xinhai HAN ,  Ryan YAMASE ,  Ji Ae PARK ,  Shamik PATEL ,  Thomas NOWAK ,  Zhengjiang "David" CUI ,  Mehul NAIK ,  Heung Lak PARK ,  Ran DING ,  Bok Hoen KIM

IPC分类号： H01L21/311 ,  H01L21/318

CPC分类号： H01L21/02068 ,  C23C16/345 ,  C23C16/45523 ,  H01L21/0217 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/56 ,  H01L21/76832 ,  H01L21/76834 ,  H01L23/291 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/13 ,  H01L24/742 ,  H01L2224/1181 ,  H01L2224/1182 ,  H01L2224/11827 ,  H01L2224/11831 ,  H01L2224/119 ,  H01L2224/11901 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/13562 ,  H01L2224/1358 ,  H01L2224/13583 ,  H01L2224/13687 ,  H01L2224/742 ,  H01L2924/0001 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/351 ,  H01L2924/05042 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

摘要翻译： 描述了在衬底的特征上形成包含氮化硅的钝化层的方法。 在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。 在第二阶段中，将具有不同于介电沉积气体的组成不同的处理气体引入处理区并通电以处理氮化硅层。 第一和第二阶段可以执行多次。