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公开(公告)号:US08268675B2
公开(公告)日:2012-09-18
申请号:US13025717
申请日:2011-02-11
IPC分类号: H04L21/00
CPC分类号: H01L24/11 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02215 , H01L2224/03009 , H01L2224/0381 , H01L2224/03828 , H01L2224/0401 , H01L2224/04042 , H01L2224/05557 , H01L2224/05567 , H01L2224/05572 , H01L2224/05647 , H01L2224/11003 , H01L2224/11009 , H01L2224/1181 , H01L2224/131 , H01L2224/13147 , H01L2224/81013 , H01L2224/81022 , H01L2224/81024 , H01L2224/81395 , H01L2224/85375 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/00012 , H01L2924/06 , H01L2924/00 , H01L2224/05552
摘要: Methods of protecting a surface of a copper layer or a copper bonding pad on a semiconductor device against oxidation. A surface of the layer or bonding pad is cleaned by removing an oxidation layer with a plasma. A polymer layer is formed on the cleaned surface of the layer using a plasma-enhanced deposition process to protect the cleaned surface of the layer against exposure to an oxidizing gas.
摘要翻译: 保护半导体器件上的铜层或铜焊盘的表面免受氧化的方法。 通过用等离子体去除氧化层来清洁该层或接合焊盘的表面。 使用等离子体增强沉积工艺在层的清洁表面上形成聚合物层,以保护层的清洁表面免于暴露于氧化气体。
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公开(公告)号:US20120208321A1
公开(公告)日:2012-08-16
申请号:US13025717
申请日:2011-02-11
IPC分类号: H01L21/461
CPC分类号: H01L24/11 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/13 , H01L2224/02215 , H01L2224/03009 , H01L2224/0381 , H01L2224/03828 , H01L2224/0401 , H01L2224/04042 , H01L2224/05557 , H01L2224/05567 , H01L2224/05572 , H01L2224/05647 , H01L2224/11003 , H01L2224/11009 , H01L2224/1181 , H01L2224/131 , H01L2224/13147 , H01L2224/81013 , H01L2224/81022 , H01L2224/81024 , H01L2224/81395 , H01L2224/85375 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01075 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/00012 , H01L2924/06 , H01L2924/00 , H01L2224/05552
摘要: Methods of protecting a surface of a copper layer or a copper bonding pad on a semiconductor device against oxidation. A surface of the layer or bonding pad is cleaned by removing an oxidation layer with a plasma. A polymer layer is formed on the cleaned surface of the layer using a plasma-enhanced deposition process to protect the cleaned surface of the layer against exposure to an oxidizing gas.
摘要翻译: 保护半导体器件上的铜层或铜焊盘的表面免受氧化的方法。 通过用等离子体去除氧化层来清洁该层或接合焊盘的表面。 使用等离子体增强沉积工艺在层的清洁表面上形成聚合物层,以保护层的清洁表面免于暴露于氧化气体。
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