公开(公告)号：US20140154867A1

公开(公告)日：2014-06-05

申请号：US14232911

申请日：2011-08-30

申请人： Klaus Martinschitz ,  Markus Wimplinger ,  Bernhard Rebhan ,  Kurt Hingerl

发明人： Klaus Martinschitz ,  Markus Wimplinger ,  Bernhard Rebhan ,  Kurt Hingerl

IPC分类号： H01L21/762

CPC分类号： H01L21/76251 ,  B23K20/021 ,  B23K20/023 ,  B23K35/001 ,  B23K35/0255 ,  B23K35/262 ,  B23K35/302 ,  B23K2101/40 ,  H01L21/185 ,  H01L24/05 ,  H01L24/08 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/038 ,  H01L2224/0384 ,  H01L2224/04026 ,  H01L2224/05557 ,  H01L2224/05647 ,  H01L2224/0801 ,  H01L2224/08501 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/275 ,  H01L2224/27505 ,  H01L2224/278 ,  H01L2224/2784 ,  H01L2224/29019 ,  H01L2224/2908 ,  H01L2224/29111 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29166 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/29211 ,  H01L2224/29311 ,  H01L2224/29347 ,  H01L2224/3201 ,  H01L2224/325 ,  H01L2224/32501 ,  H01L2224/7565 ,  H01L2224/83013 ,  H01L2224/83022 ,  H01L2224/83191 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83345 ,  H01L2224/83365 ,  H01L2224/83385 ,  H01L2224/838 ,  H01L2224/8383 ,  H01L2224/8384 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/1434 ,  H01L2924/351 ,  H01L2924/3511 ,  H01L2924/0105 ,  H01L2224/83

摘要： A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.

摘要翻译： 一种用于将第一固体基质与含有第一材料的第二固体基质结合的方法，其特征在于以下步骤：形成或施加包含第二材料的功能层至第二固体基质，使第 所述第一固体基底具有所述功能层上的第二固体基底，将固体基底压在一起以在所述第一和第二固体基底之间形成永久性结合，至少部分地通过所述第一材料的固体扩散和/或相变而与 第二种材料，会引起功能层上的体积增加。

公开(公告)号：US08368205B2

公开(公告)日：2013-02-05

申请号：US12971737

申请日：2010-12-17

申请人： Seshasayee Ankireddi ,  Vadim Gektin ,  James A. Jones ,  Margaret B. Stern

发明人： Seshasayee Ankireddi ,  Vadim Gektin ,  James A. Jones ,  Margaret B. Stern

IPC分类号： H01L23/34

CPC分类号： H01L23/3675 ,  H01L21/50 ,  H01L23/42 ,  H01L24/27 ,  H01L24/83 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0508 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27334 ,  H01L2224/27849 ,  H01L2224/29109 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75755 ,  H01L2224/75756 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83014 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83211 ,  H01L2224/83815 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16171 ,  H01L2924/16251 ,  H01L2924/16747 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/00012 ,  H01L2924/01032

摘要： A method for the assembly of a semiconductor package that includes cleaning a surface of a chip and a surface of a heat removal device by reverse sputtering is given. The method includes sequentially coating the surface of the chip and the surface of the heat removal device with an adhesive layer, a barrier layer, and a protective layer over a target joining area. The chip and the heat removal device are placed into carrier fixtures and preheated to a target temperature. Then a metallic thermal interface material (TIM) preform is mechanically rolled onto the surface of the chip and the first and the second carrier fixtures are attached together such that the metallic TIM layer on the surface of the chip is joined to the coated surface of the heat removal device through a fluxless process. The method includes heating the joined carrier fixtures in a reflow oven.

摘要翻译： 给出了一种用于组装半导体封装的方法，其包括通过反溅射清洗芯片的表面和散热装置的表面。 该方法包括在目标接合区域上用粘合剂层，阻挡层和保护层依次涂覆芯片的表面和除热装置的表面。 将芯片和散热装置放置在载体夹具中并预热至目标温度。 然后将金属热界面材料（TIM）预成型件机械地轧制到芯片的表面上，并且将第一和第二载体固定装置附接在一起，使得芯片表面上的金属TIM层连接到芯片的涂覆表面 散热装置通过无助焊剂工艺。 该方法包括在回流炉中加热接合的载体夹具。

公开(公告)号：US11942447B2

公开(公告)日：2024-03-26

申请号：US17459496

申请日：2021-08-27

申请人： TAIWAN SEMINCONDUCTOR MANUFACTURING CO., LTD.

发明人： De-Yang Chiou ,  Fu-Ting Yen ,  Yu-Yun Peng ,  Keng-Chu Lin

IPC分类号： H01L23/48 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

CPC分类号： H01L24/32 ,  H01L23/481 ,  H01L24/29 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/29188 ,  H01L2224/32145 ,  H01L2224/83013 ,  H01L2224/83896 ,  H01L2225/06541 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/3512

摘要： The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.

公开(公告)号：US20180330982A1

公开(公告)日：2018-11-15

申请号：US15774454

申请日：2016-11-10

申请人： Nanyang Technological University ,  Massachusetts Institute of Technology

发明人： Kwang Hong Lee ,  Chuan Seng Tan ,  Eugene A. Fitzgerald ,  Shuyu Bao ,  Eng Kian Kenneth Lee ,  David Kohen

IPC分类号： H01L21/762 ,  H01L21/02 ,  H01L21/324 ,  H01L23/00

CPC分类号： H01L21/76251 ,  H01L21/02002 ,  H01L21/02054 ,  H01L21/304 ,  H01L21/30604 ,  H01L21/3245 ,  H01L21/762 ,  H01L21/8258 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L28/00 ,  H01L2224/27452 ,  H01L2224/29186 ,  H01L2224/83002 ,  H01L2224/83005 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83019 ,  H01L2224/8389 ,  H01L2924/10253 ,  H01L2924/10329

摘要： A method of manufacturing a hybrid substrate is disclosed, which comprises: bonding a first semiconductor substrate to a first combined substrate via at least one layer of dielectric material to form a second combined substrate, the first combined substrate includes a layer of III-V compound semiconductor and a second semiconductor substrate, the layer of III-V compound semiconductor arranged intermediate the layer of dielectric material and second semiconductor substrate; removing the second semiconductor substrate from the second combined substrate to expose at least a portion of the layer of III-V compound semiconductor to obtain a third combined substrate; and annealing the third combined substrate at a temperature about 250° C. to 1000° C. to reduce threading dislocation density of the layer of III-V compound semiconductor to obtain the hybrid substrate.

公开(公告)号：US09640510B2

公开(公告)日：2017-05-02

申请号：US14787397

申请日：2013-07-05

申请人： EV GROUP E. THALLNER GMBH

发明人： Bernhard Rebhan

IPC分类号： H01L21/00 ,  H01L23/00 ,  H01L21/66

CPC分类号： H01L24/83 ,  H01L22/12 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/743 ,  H01L2223/54426 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03602 ,  H01L2224/03616 ,  H01L2224/0381 ,  H01L2224/05561 ,  H01L2224/05564 ,  H01L2224/05567 ,  H01L2224/05647 ,  H01L2224/061 ,  H01L2224/274 ,  H01L2224/2741 ,  H01L2224/27444 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/27464 ,  H01L2224/2781 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29023 ,  H01L2224/29028 ,  H01L2224/29187 ,  H01L2224/8301 ,  H01L2224/83011 ,  H01L2224/83012 ,  H01L2224/83013 ,  H01L2224/83026 ,  H01L2224/8312 ,  H01L2224/83121 ,  H01L2224/83203 ,  H01L2224/8383 ,  H01L2224/83907 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/00012 ,  H01L2924/05442 ,  H01L2224/05552

摘要： A method for bonding of a first, at least partially metallic contact surface of a first substrate to a second, at least partially metallic contact surface of a second substrate, with the following steps, especially the following progression: application of a sacrificial layer which is at least partially, especially predominantly soluble in the material of at least one of the contact surfaces to at least one of the contact surfaces, bonding of the contact surfaces with at least partial solution of the sacrificial layer in at least one of the contact surfaces.

公开(公告)号：US09550353B2

公开(公告)日：2017-01-24

申请号：US14804047

申请日：2015-07-20

申请人： X-Celeprint Limited

发明人： Christopher Bower ,  Matthew Meitl ,  David Gomez ,  Salvatore Bonafede ,  David Kneeburg

IPC分类号： B41F16/00 ,  H01L21/3065 ,  H01L21/52 ,  H01L21/56 ,  H01L23/29 ,  B41K3/12 ,  H01L21/683 ,  H01L21/67 ,  H01L23/00 ,  B25J15/00 ,  H01L23/31 ,  H01L25/00 ,  H01L31/18

CPC分类号： B41F16/00 ,  B25J15/00 ,  B41F16/0046 ,  B41F16/006 ,  B41F16/0073 ,  B41K3/04 ,  B41K3/12 ,  H01L21/3065 ,  H01L21/52 ,  H01L21/565 ,  H01L21/568 ,  H01L21/67103 ,  H01L21/683 ,  H01L21/6835 ,  H01L23/293 ,  H01L23/3171 ,  H01L24/75 ,  H01L24/83 ,  H01L24/97 ,  H01L25/50 ,  H01L31/1892 ,  H01L2221/68318 ,  H01L2221/68354 ,  H01L2221/68368 ,  H01L2221/68377 ,  H01L2221/68381 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/75315 ,  H01L2224/7598 ,  H01L2224/83001 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83024 ,  H01L2224/832 ,  H01L2224/83894 ,  H01L2224/83895 ,  H01L2924/10253 ,  H01L2924/1032 ,  H01L2924/10328 ,  H01L2924/10329 ,  H01L2924/10332 ,  H01L2924/10335 ,  H01L2924/10336 ,  H01L2924/10337 ,  H01L2924/10338 ,  H01L2924/1034

摘要： In an aspect, a system and method for assembling a semiconductor device on a receiving surface of a destination substrate is disclosed. In another aspect, a system and method for assembling a semiconductor device on a destination substrate with topographic features is disclosed. In another aspect, a gravity-assisted separation system and method for printing semiconductor device is disclosed. In another aspect, various features of a transfer device for printing semiconductor devices are disclosed.

摘要翻译： 在一方面，公开了一种用于在目的基板的接收表面上组装半导体器件的系统和方法。 另一方面，公开了一种用于在具有地形特征的目的地基板上组装半导体器件的系统和方法。 另一方面，公开了一种用于印刷半导体器件的重力辅助分离系统和方法。 另一方面，公开了用于印刷半导体器件的转印装置的各种特征。

公开(公告)号：US09142532B2

公开(公告)日：2015-09-22

申请号：US14397038

申请日：2013-04-24

申请人： Tadatomo Suga ,  BONDTECH CO., LTD.

发明人： Tadatomo Suga ,  Akira Yamauchi

IPC分类号： H01L21/00 ,  H01L25/065 ,  H01L23/00 ,  H01L25/00 ,  B23K31/02 ,  B23K37/00 ,  B23K37/04 ,  H01L21/66 ,  H01L25/10 ,  H01L23/10 ,  H01L21/683

CPC分类号： H01L25/0652 ,  B23K31/02 ,  B23K37/00 ,  B23K37/0408 ,  B23K2101/40 ,  H01L21/6836 ,  H01L22/10 ,  H01L23/10 ,  H01L23/562 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/08 ,  H01L24/09 ,  H01L24/11 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/17 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/74 ,  H01L24/742 ,  H01L24/743 ,  H01L24/75 ,  H01L24/80 ,  H01L24/81 ,  H01L24/83 ,  H01L24/94 ,  H01L24/95 ,  H01L25/105 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2224/0384 ,  H01L2224/03845 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05611 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/06134 ,  H01L2224/0615 ,  H01L2224/06177 ,  H01L2224/08145 ,  H01L2224/08225 ,  H01L2224/09181 ,  H01L2224/1184 ,  H01L2224/11845 ,  H01L2224/13009 ,  H01L2224/13016 ,  H01L2224/13017 ,  H01L2224/13021 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14134 ,  H01L2224/1415 ,  H01L2224/14177 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/17181 ,  H01L2224/27009 ,  H01L2224/2755 ,  H01L2224/27823 ,  H01L2224/2784 ,  H01L2224/27845 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/33181 ,  H01L2224/73103 ,  H01L2224/74 ,  H01L2224/7501 ,  H01L2224/75101 ,  H01L2224/75102 ,  H01L2224/7525 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75283 ,  H01L2224/753 ,  H01L2224/75301 ,  H01L2224/7531 ,  H01L2224/75501 ,  H01L2224/75502 ,  H01L2224/7565 ,  H01L2224/75701 ,  H01L2224/75702 ,  H01L2224/75753 ,  H01L2224/75802 ,  H01L2224/75804 ,  H01L2224/75824 ,  H01L2224/75842 ,  H01L2224/7598 ,  H01L2224/80003 ,  H01L2224/8001 ,  H01L2224/80013 ,  H01L2224/80065 ,  H01L2224/8013 ,  H01L2224/80132 ,  H01L2224/80143 ,  H01L2224/80201 ,  H01L2224/80203 ,  H01L2224/8022 ,  H01L2224/8023 ,  H01L2224/80447 ,  H01L2224/8083 ,  H01L2224/80907 ,  H01L2224/81002 ,  H01L2224/8101 ,  H01L2224/81013 ,  H01L2224/81065 ,  H01L2224/8113 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81193 ,  H01L2224/81201 ,  H01L2224/81203 ,  H01L2224/8122 ,  H01L2224/8123 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81805 ,  H01L2224/8183 ,  H01L2224/81907 ,  H01L2224/83002 ,  H01L2224/8301 ,  H01L2224/83013 ,  H01L2224/83048 ,  H01L2224/83051 ,  H01L2224/83065 ,  H01L2224/83091 ,  H01L2224/8313 ,  H01L2224/83132 ,  H01L2224/83136 ,  H01L2224/83143 ,  H01L2224/83193 ,  H01L2224/83201 ,  H01L2224/83203 ,  H01L2224/8322 ,  H01L2224/8323 ,  H01L2224/83234 ,  H01L2224/83355 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/83907 ,  H01L2224/94 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06565 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/01322 ,  H01L2924/10157 ,  H01L2924/10253 ,  H01L2924/3511 ,  H01L2224/81 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2224/80 ,  H01L2224/83 ,  H01L2924/00

摘要： [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.[Solution] A method for bonding plural chips each having a chip-side-bond-surface having metal regions to a substrate having plural bond portions has the step (S1) of subjecting the metal regions of the chip-side-bond-surface to surface activating treatment and hydrophilizing treatment; the step (S2) of subjecting the bond portions of the substrate to surface activating treatment and hydrophilizing treatment; the step (S3) of fitting the chips subjected to the surface activating treatment and the hydrophilizing treatment onto the corresponding bond portions of the substrate subjected to the surface activating treatment and the hydrophilizing treatment to bring the metal regions of the chips into contact with the bond portions of the substrate; and the step (S4) of heating the resultant structure, which includes the substrate, and the chips fitted onto the substrate.

摘要翻译： [问题]提供了一种将芯片有效地接合到晶片上以建立电连接并提高芯片和晶片之间或芯片之间的机械强度的技术，该芯片是在树脂和其它不期望的残留物的状态下彼此层压的芯片 不保留在它们之间的结合界面上。 [解决方案]将具有金属区域的具有芯片侧接合面的多个芯片接合到具有多个结合部的基板的方法具有将芯片侧接合面的金属区域 表面活化处理和亲水处理; 对所述基板的所述接合部进行表面活化处理和亲水化处理的工序（S2） 将经过表面活化处理和亲水化处理的芯片装配到经过表面活化处理的基板的相应接合部分和亲水化处理上以使芯片的金属区域与键接触的步骤（S3） 基板的一部分; 以及加热包括基板的所得结构和安装在基板上的芯片的步骤（S4）。

公开(公告)号：US08844793B2

公开(公告)日：2014-09-30

申请号：US13231749

申请日：2011-09-13

申请人： Buu Diep ,  Thomas A. Kocian ,  Roland W. Gooch

发明人： Buu Diep ,  Thomas A. Kocian ,  Roland W. Gooch

IPC分类号： B23K37/00 ,  H01L21/67 ,  H01L23/00 ,  B23K3/047 ,  B23K1/20 ,  B23K1/008 ,  B23K1/00 ,  B23K3/08

CPC分类号： B23K1/206 ,  B23K1/0016 ,  B23K1/008 ,  B23K1/20 ,  B23K1/203 ,  B23K3/047 ,  B23K3/08 ,  B23K2101/40 ,  H01L21/67092 ,  H01L21/67173 ,  H01L21/67207 ,  H01L24/27 ,  H01L24/29 ,  H01L24/742 ,  H01L24/75 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/0401 ,  H01L2224/056 ,  H01L2224/27318 ,  H01L2224/27334 ,  H01L2224/2745 ,  H01L2224/2746 ,  H01L2224/2781 ,  H01L2224/27826 ,  H01L2224/291 ,  H01L2224/29144 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/7501 ,  H01L2224/75102 ,  H01L2224/83013 ,  H01L2224/83201 ,  H01L2224/834 ,  H01L2224/83815 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/1461 ,  H01L2924/181 ,  H01L2224/83 ,  H01L2924/0105 ,  H01L2924/00

摘要： In certain embodiments, a system includes a deposition system and a plasma/bonding system. The deposition system deposits a solder outwardly from a substrate of a number of substrates. The plasma/bonding system comprises a plasma system configured to plasma clean the substrate and a bonding system configured to bond the substrates. The plasma/bonding system at least reduces reoxidation of the solder. In certain embodiments, a method comprises depositing solder outwardly from a substrate, removing metal oxide from the substrate, and depositing a capping layer outwardly from the substrate to at least reduce reoxidation of the solder.

摘要翻译： 在某些实施例中，系统包括沉积系统和等离子/粘合系统。 沉积系统从许多基底的衬底向外沉积焊料。 等离子体/粘合系统包括构造成等离子体清洁基板的等离子体系统和被配置为结合基板的接合系统。 等离子体/粘合系统至少减少了焊料的再氧化。 在某些实施例中，一种方法包括从衬底向外沉积焊料，从衬底去除金属氧化物，以及从衬底向外沉积覆盖层以至少减少焊料的再氧化。

公开(公告)号：US20140035167A1

公开(公告)日：2014-02-06

申请号：US13954346

申请日：2013-07-30

申请人： Robert Bosch GmbH

发明人： Christoph Schelling ,  David Borowsky

IPC分类号： H01L21/48 ,  H01L23/48

CPC分类号： H01L21/4814 ,  B81B7/007 ,  B81B2207/095 ,  B81C2203/0118 ,  B81C2203/019 ,  H01L23/48 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/81 ,  H01L24/83 ,  H01L2224/02379 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05023 ,  H01L2224/05073 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05186 ,  H01L2224/05548 ,  H01L2224/05568 ,  H01L2224/05569 ,  H01L2224/05573 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/08148 ,  H01L2224/08221 ,  H01L2224/1145 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/1147 ,  H01L2224/11825 ,  H01L2224/13008 ,  H01L2224/13023 ,  H01L2224/13124 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13564 ,  H01L2224/1357 ,  H01L2224/13647 ,  H01L2224/27825 ,  H01L2224/29011 ,  H01L2224/29023 ,  H01L2224/29035 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29564 ,  H01L2224/2957 ,  H01L2224/29647 ,  H01L2224/3003 ,  H01L2224/30051 ,  H01L2224/33517 ,  H01L2224/73103 ,  H01L2224/73203 ,  H01L2224/81011 ,  H01L2224/81013 ,  H01L2224/81193 ,  H01L2224/81203 ,  H01L2224/8183 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/8383 ,  H01L2224/9211 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01029 ,  H01L2924/01079 ,  H01L2924/01013 ,  H01L2924/04941 ,  H01L2924/04953

摘要： A method produces a bonding pad for thermocompression bonding. The method includes providing a carrier material having semiconductor structures, wherein an outermost edge layer of the carrier material is a wiring metal layer configured to make electrical contact with the semiconductor structures. The method also includes depositing a single-layered bonding metal layer directly on a surface of the wiring metal layer to produce the bonding pad.

摘要翻译： 一种方法产生用于热压接的接合焊盘。 该方法包括提供具有半导体结构的载体材料，其中载体材料的最外边缘层是配置为与半导体结构电接触的布线金属层。 该方法还包括在布线金属层的表面上直接沉积单层结合金属层以产生接合焊盘。

公开(公告)号：US20120153453A1

公开(公告)日：2012-06-21

申请号：US12971737

申请日：2010-12-17

申请人： Seshasayee Ankireddi ,  Vadim Gektin ,  James A. Jones ,  Margaret B. Stern

发明人： Seshasayee Ankireddi ,  Vadim Gektin ,  James A. Jones ,  Margaret B. Stern

IPC分类号： H01L23/34 ,  H01L21/50

CPC分类号： H01L23/3675 ,  H01L21/50 ,  H01L23/42 ,  H01L24/27 ,  H01L24/83 ,  H01L2224/0345 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/0508 ,  H01L2224/05155 ,  H01L2224/05157 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05644 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/27334 ,  H01L2224/27849 ,  H01L2224/29109 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/75 ,  H01L2224/75251 ,  H01L2224/75252 ,  H01L2224/75755 ,  H01L2224/75756 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83014 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83211 ,  H01L2224/83815 ,  H01L2924/01029 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/16152 ,  H01L2924/16171 ,  H01L2924/16251 ,  H01L2924/16747 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/00012 ,  H01L2924/01032

摘要： A method for the assembly of a semiconductor package that includes cleaning a surface of a chip and a surface of a heat removal device by reverse sputtering is given. The method includes sequentially coating the surface of the chip and the surface of the heat removal device with an adhesive layer, a barrier layer, and a protective layer over a target joining area. The chip and the heat removal device are placed into carrier fixtures and preheated to a target temperature. Then a metallic thermal interface material (TIM) preform is mechanically rolled onto the surface of the chip and the first and the second carrier fixtures are attached together such that the metallic TIM layer on the surface of the chip is joined to the coated surface of the heat removal device through a fluxless process. The method includes heating the joined carrier fixtures in a reflow oven.

摘要翻译： 给出了一种用于组装半导体封装的方法，其包括通过反溅射清洗芯片的表面和散热装置的表面。 该方法包括在目标接合区域上用粘合剂层，阻挡层和保护层依次涂覆芯片的表面和除热装置的表面。 将芯片和散热装置放置在载体夹具中并预热至目标温度。 然后将金属热界面材料（TIM）预成型件机械地轧制到芯片的表面上，并且将第一和第二载体固定装置附接在一起，使得芯片表面上的金属TIM层结合到 散热装置通过无助焊剂工艺。 该方法包括在回流炉中加热接合的载体夹具。