公开(公告)号：US20190259678A1

公开(公告)日：2019-08-22

申请号：US16403869

申请日：2019-05-06

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Chih-Fan Huang ,  Chih-Wei Lin ,  Wei-Hung Lin ,  Ming-Da Cheng

IPC分类号： H01L23/29 ,  H01L23/00 ,  H01L23/31 ,  H01L25/10 ,  H01L23/538

摘要： Apparatus, and methods of manufacture thereof, in which a molding compound is formed between spaced apart microelectronic devices. The molding compound comprises micro-filler elements. No boundary of any of the micro-filler elements is substantially parallel to a substantially planar surface of the molding compound, or to a substantially planar surface of any of the microelectronic devices.

公开(公告)号：US10032734B2

公开(公告)日：2018-07-24

申请号：US15268739

申请日：2016-09-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hui-Min Huang ,  Chih-Wei Lin ,  Tsai-Tsung Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L23/498 ,  H01L23/31 ,  H01L23/538 ,  H01L23/48

摘要： A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

公开(公告)号：US09911675B2

公开(公告)日：2018-03-06

申请号：US14995865

申请日：2016-01-14

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Chih-Fan Huang ,  Chih-Wei Lin ,  Wei-Hung Lin ,  Ming-Da Cheng

IPC分类号： H01L23/02 ,  H01L23/28 ,  H01L23/48 ,  H01L23/31 ,  H01L25/10 ,  H01L21/56 ,  H01L23/528 ,  H01L21/768 ,  H01L21/82 ,  H01L23/04 ,  H01L23/367 ,  H01L23/00 ,  H01L23/538 ,  H01L23/498

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/768 ,  H01L21/82 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/528 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48096 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48095

摘要： Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

公开(公告)号：US09627234B2

公开(公告)日：2017-04-18

申请号：US14208124

申请日：2014-03-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hui-Min Huang ,  Chih-Wei Lin ,  Cheng-Ting Chen ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L21/67 ,  H01L21/02 ,  G03F7/42

CPC分类号： H01L21/6708 ,  G03F7/42 ,  H01L21/02052 ,  H01L21/02057

摘要： A method and a system that include providing a localized dispensing apparatus. A substrate having a material disposed on its top surface is oriented above the localized dispensing apparatus. A chemical is then dispensed from the localized dispensing apparatus onto the top surface of the oriented substrate. The chemical removes the material. The path for the material removal may be determined and the localized dispensing apparatus programmed to provide chemical according to the path.

公开(公告)号：US20170005049A1

公开(公告)日：2017-01-05

申请号：US15268739

申请日：2016-09-19

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Hui-Min Huang ,  Chih-Wei Lin ,  Tsai-Tsung Tsai ,  Ming-Da Cheng ,  Chung-Shi Liu ,  Chen-Hua Yu

IPC分类号： H01L23/00 ,  H01L23/48 ,  H01L21/56 ,  H01L23/31

CPC分类号： H01L24/05 ,  H01L21/481 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/481 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49833 ,  H01L23/49838 ,  H01L23/49861 ,  H01L23/49866 ,  H01L23/5389 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/02372 ,  H01L2224/0239 ,  H01L2224/0401 ,  H01L2224/05083 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05184 ,  H01L2224/12105 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13147 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/83191 ,  H01L2224/94 ,  H01L2924/01029 ,  H01L2924/18162 ,  H01L2224/03 ,  H01L2224/27

摘要： A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

摘要翻译： 在第一模具和第二模具上形成第一保护层，并且在第一保护层内形成开口。 第一管芯和第二管芯被封装成使得密封剂比第一管芯和第二管芯更厚，并且通孔形成在开口内。 还可以形成再分布层以在密封剂上延伸，并且第一管芯可以与第二管芯分离。

公开(公告)号：US09373610B2

公开(公告)日：2016-06-21

申请号：US14825722

申请日：2015-08-13

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chih-Wei Lin ,  Ming-Da Cheng ,  Meng-Tse Chen ,  Wen-Hsiung Lu ,  Kuei-Wei Huang ,  Chung-Shi Liu

IPC分类号： H01L21/00 ,  H01L25/00 ,  H01L21/56 ,  H01L25/065 ,  H01L21/786 ,  H01L21/311 ,  H01L23/00 ,  H01L21/3105 ,  H01L25/10 ,  H01L23/538 ,  H01L23/522 ,  H01L23/31 ,  H01L23/498

CPC分类号： H01L25/50 ,  H01L21/31051 ,  H01L21/31127 ,  H01L21/565 ,  H01L21/568 ,  H01L21/76885 ,  H01L21/786 ,  H01L23/3128 ,  H01L23/49805 ,  H01L23/49816 ,  H01L23/5226 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/02371 ,  H01L2224/02381 ,  H01L2224/03618 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/13024 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13164 ,  H01L2224/16225 ,  H01L2224/19 ,  H01L2224/27019 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/73267 ,  H01L2224/81005 ,  H01L2224/82005 ,  H01L2224/83005 ,  H01L2224/92125 ,  H01L2224/92244 ,  H01L2225/06513 ,  H01L2225/0652 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1047 ,  H01L2225/1058 ,  H01L2924/01029 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15321 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/00

摘要： A device includes an inter-layer dielectric, a device die under the inter-layer dielectric; and a die-attach film under the inter-layer dielectric and over the device die, wherein the die-attach film is attached to the device die. A plurality of redistribution lines includes portions level with the die-attach film. A plurality of Z-interconnects is electronically coupled to the device die and the plurality of redistribution lines. A polymer-comprising material is under the inter-layer dielectric. The device die, the die-attach film, and the plurality of Z-interconnects are disposed in the polymer-comprising material.

公开(公告)号：US09368460B2

公开(公告)日：2016-06-14

申请号：US13937726

申请日：2013-07-09

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chen-Hua Yu ,  Yen-Chang Hu ,  Ching-Wen Hsiao ,  Mirng-Ji Lii ,  Chung-Shi Liu ,  Chien Ling Hwang ,  Chih-Wei Lin ,  Chen-Shien Chen

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L23/538 ,  H01L23/29 ,  H01L23/31 ,  H01L23/525

CPC分类号： H01L24/02 ,  H01L21/561 ,  H01L21/568 ,  H01L23/293 ,  H01L23/3185 ,  H01L23/3192 ,  H01L23/525 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/19 ,  H01L24/96 ,  H01L24/97 ,  H01L2224/0231 ,  H01L2224/02315 ,  H01L2224/0235 ,  H01L2224/02379 ,  H01L2224/02381 ,  H01L2224/024 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/05008 ,  H01L2224/05016 ,  H01L2224/05017 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05567 ,  H01L2224/05573 ,  H01L2224/05647 ,  H01L2224/05666 ,  H01L2224/11002 ,  H01L2224/12105 ,  H01L2224/13007 ,  H01L2224/13024 ,  H01L2224/13111 ,  H01L2224/1411 ,  H01L2224/97 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2224/03 ,  H01L2224/05644 ,  H01L2924/00014 ,  H01L2224/05624 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/00

摘要： A method embodiment includes forming a sacrificial film layer over a top surface of a die, the die having a contact pad at the top surface. The die is attached to a carrier, and a molding compound is formed over the die and the sacrificial film layer. The molding compound extends along sidewalls of the die. The sacrificial film layer is exposed. The contact pad is exposed by removing at least a portion of the sacrificial film layer. A first polymer layer is formed over the die, and a redistribution layer (RDL) is formed over the die and electrically connects to the contact pad.

摘要翻译： 方法实施例包括在模具的顶表面上形成牺牲膜层，模具在顶表面具有接触垫。 模具附接到载体上，并且在模具和牺牲膜层上形成模塑料。 模塑料沿模具的侧壁延伸。 牺牲膜层被暴露。 通过去除牺牲膜层的至少一部分来暴露接触垫。 在模具上形成第一聚合物层，并且在芯片上形成再分配层（RDL），并且电连接到接触焊盘。

公开(公告)号：US20150228632A1

公开(公告)日：2015-08-13

申请号：US14180208

申请日：2014-02-13

申请人： TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

发明人： Chen-Hua Yu ,  Chung-Shi Liu ,  Chih-Fan Huang ,  Chih-Wei Lin ,  Wei-Hung Lin ,  Ming-Da Cheng

IPC分类号： H01L25/10 ,  H01L23/31 ,  H01L23/367 ,  H01L21/768 ,  H01L21/82 ,  H01L23/04 ,  H01L21/56 ,  H01L23/528

CPC分类号： H01L23/3114 ,  H01L21/561 ,  H01L21/565 ,  H01L21/568 ,  H01L21/768 ,  H01L21/82 ,  H01L23/04 ,  H01L23/3128 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/367 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49822 ,  H01L23/528 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/73 ,  H01L24/96 ,  H01L24/97 ,  H01L25/105 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48096 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18162 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48095

摘要： Packaged semiconductor devices and methods of packaging semiconductor devices are disclosed. In some embodiments, a packaged semiconductor device includes an integrated circuit die, a molding compound disposed around the integrated circuit die, and an interconnect structure disposed over the integrated circuit die and the molding compound. The molding compound is thicker than the integrated circuit die.

摘要翻译： 公开了封装半导体器件和封装半导体器件的方法。 在一些实施例中，封装半导体器件包括集成电路管芯，设置在集成电路管芯周围的模塑料，以及设置在集成电路管芯和模塑料上的互连结构。 模塑料比集成电路模具厚。

公开(公告)号：US20140231988A1

公开(公告)日：2014-08-21

申请号：US14265164

申请日：2014-04-29

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Meng-Tse Chen ,  Wei-Hung Lin ,  Yu-Peng Tsai ,  Chun-Cheng Lin ,  Chih-Wei Lin ,  Ming-Da Cheng ,  Chung-Shi Liu

IPC分类号： H01L23/00

CPC分类号： H01L24/32 ,  B23K35/24 ,  B23K35/3612 ,  H01L23/49816 ,  H01L24/17 ,  H01L25/105 ,  H01L25/50 ,  H01L2224/16237 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48228 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/81815 ,  H01L2225/1023 ,  H01L2225/1058 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/00014 ,  H01L2224/48227 ,  H01L2924/00 ,  H01L2924/00012

摘要： Packaging methods and packaged semiconductor devices are disclosed. In one embodiment, a packaging method includes providing a first die, partially packaging the first die, and forming a plurality of solder balls on a surface of the partially packaged first die. An epoxy flux is disposed over the plurality of solder balls. A second die is provided, and the second die is partially packaged. The plurality of solder balls is coupled to the partially packaged second die.

摘要翻译： 公开了封装方法和封装的半导体器件。 在一个实施例中，包装方法包括提供第一模具，部分地包装第一模具，以及在部分封装的第一模具的表面上形成多个焊球。 环氧助焊剂设置在多个焊球上。 提供第二模具，并且第二模具被部分包装。 多个焊球与部分封装的第二管连接。

公开(公告)号：US20240355691A1

公开(公告)日：2024-10-24

申请号：US18761238

申请日：2024-07-01

申请人： Taiwan Semiconductor Manufacturing Company, Ltd.

发明人： Chun-Cheng Lin ,  Ching-Hua Hsieh ,  Chen-Hua Yu ,  Chung-Shi Liu ,  Chih-Wei Lin

IPC分类号： H01L23/31 ,  B29C45/14 ,  B29K63/00 ,  B29L31/34 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/29 ,  H01L23/367 ,  H01L23/498 ,  H01L23/538 ,  H01L25/065

CPC分类号： H01L23/3114 ,  H01L21/4853 ,  H01L21/486 ,  H01L21/565 ,  H01L21/566 ,  H01L23/295 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/3675 ,  H01L23/49816 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L24/16 ,  H01L24/32 ,  H01L24/33 ,  H01L24/73 ,  H01L24/81 ,  H01L24/95 ,  H01L25/0655 ,  B29C45/14655 ,  B29K2063/00 ,  B29K2995/0007 ,  B29L2031/3406 ,  H01L24/13 ,  H01L2224/13109 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13118 ,  H01L2224/1312 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13149 ,  H01L2224/13155 ,  H01L2224/16225 ,  H01L2224/33181 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/81192 ,  H01L2924/1431 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/19101 ,  H01L2924/3511

摘要： A semiconductor package including a circuit substrate, an interposer structure, a plurality of dies, and an insulating encapsulant is provided. The interposer structure is disposed on the circuit substrate. The plurality of dies is disposed on the interposer structure, wherein the plurality of dies is electrically connected to the circuit substrate through the interposer structure. The insulating encapsulant is disposed on the circuit substrate, wherein the insulating encapsulant surrounds the plurality of dies and the interposer structure and encapsulates at least the interposer structure, the insulating encapsulant has a groove that surrounds the interposer structure and the plurality of dies, and the interposer structure and the plurality of dies are confined to be located within the groove.