摘要:
A method for bonding two confronting electronic devices together wherein the two electronic devices are initially temporarily coupled together using a room temperature process with a plurality of knife-edge microstructures on at least a first one of the electronic devices engaging portions of the a second one of the electronic devices. The room temperature process involves applying a relatively low compressive force or pressure between the two electronic devices compared to the forces or pressures used in convention flip-chip bonding. The first one of the electronic devices and the second one of the electronic devices also have traditional contact pads that are spaced from each other by a standoff distance when the devices are initially coupled together using the room temperature process. This allows for inspection of the two electronic devices while they are initially temporarily coupled together. In need be, the two can be separated at this stage for re-work After passing inspection, a relatively higher compressive force or pressure is applied between the two electronic devices to cause the standoff distance to decrease to zero and for the contact pads confronting each other on the confronting two electronic devices to weld thereby permanently bonding the two electronic devices together.
摘要:
A soldering device includes a control unit to predict a final rise temperature of an electronic device, based on power of a light pulse from at least one pulsed light irradiator, a weight of the electronic device, a real-time temperature of the electronic device, the quantity of exposures of the light pulse, and an irradiation period of the light pulse, and change a condition of the light pulse, based on a predicted result. A soldering method includes calculating power of the light pulse based on a time width of the light pulse, measuring a temperature of the electronic device, and predicting a final rise temperature of the electronic device, based on the calculated power, a weight of the electronic device, the measured temperature, the quantity of exposures of the light pulse, and the irradiation period.
摘要:
A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.
摘要:
A method includes performing a first strike process to strike a metal bump of a first package component against a metal pad of a second package component. A first one of the metal bump and the metal pad includes copper. A second one of the metal bump and the metal pad includes aluminum. The method further includes performing a second strike process to strike the metal bump against the metal pad. An annealing is performed to bond the metal bump on the metal pad.
摘要:
An electronic structure includes a packaging structure, a circuit pattern structure, an underfill and a protrusion structure. The circuit pattern structure is disposed over the packaging structure. A gap is between the circuit pattern structure and the packaging structure. The underfill is disposed in the gap. The protrusion structure is disposed in the gap, and is configured to facilitate the distributing of the underfill in the gap.
摘要:
A semiconductor device and a method of manufacturing a semiconductor device. As a non-limiting example, various aspects of this disclosure provide a semiconductor device, and a method of manufacturing thereof, that comprises a substrate including a dielectric layer, at least one conductive trace and conductive bump pad formed on one surface of the dielectric layer, and a protection layer covering the at least one conductive trace and conductive bump pad, the at least one conductive bump pad having one end exposed through the protection layer, and a semiconductor die electrically connected to the conductive bump pad of the substrate.
摘要:
A chip packaging method using a hydrophobic surface includes forming superhydrophobic surfaces forming hydrophilic surfaces on predetermined positions of the superhydrophobic surfaces formed on the one of a first chip or the first board and the one of a second chip or a second board, respectively, generating liquid metal balls on the hydrophilic surfaces formed on the one of the first chip or the first board and the one of the second chip or the second board, respectively, and packaging the one of the first chip or the first board and the one of the second chip or the second board by combing the liquid metal ball of the one of the first chip or the first board and the liquid metal ball of the one of the second chip or the second board with each other.
摘要:
A chip packaging method using a hydrophobic surface includes forming superhydrophobic surfaces forming hydrophilic surfaces on predetermined positions of the superhydrophobic surfaces formed on the one of a first chip or the first board and the one of a second chip or a second board, respectively, generating liquid metal balls on the hydrophilic surfaces formed on the one of the first chip or the first board and the one of the second chip or the second board, respectively, and packaging the one of the first chip or the first board and the one of the second chip or the second board by combing the liquid metal ball of the one of the first chip or the first board and the liquid metal ball of the one of the second chip or the second board with each other.
摘要:
Bump electrodes and wiring layers are formed by selectively removing a copper sheet while the copper sheet is being held on a supporting base by an adhesion layer. Subsequently, a device mounting board is formed by laminating an insulating resin layer in such a manner that Au/Ni layers are exposed on the bump electrodes and the adhesion layer. The device mounting board and a semiconductor device held on the supporting base are temporarily press-bonded to each other and then the supporting base and the adhesion layer are removed. Then the device mounting board and the semiconductor device are finally and permanently press-bonded together.
摘要:
An electronic element including an electronic element base and electrodes each of which has a first electrode having a surface composed of at least Al or an Al alloy and a second electrode composed of a metal nanoparticle sintered body and bonded to the first electrode. A bonding interface between the first electrode and the second electrode has a multilayer structure including, from the side of the first electrode to the side of the second electrode, (a) a first layer primarily composed of Al, (b) a second layer primarily composed of an Al oxide, (c) a third layer primarily composed of an alloy of Al and a constituent element of metal nanoparticles, and (d) a fourth layer primarily composed of the constituent element of the metal nanoparticles.