公开(公告)号：US20190103341A1

公开(公告)日：2019-04-04

申请号：US16083389

申请日：2017-03-07

Applicant: WASEDA UNIVERSITY ,  MITSUI HIGH-TEC, INC.

Inventor： Kohei Tatsumi ,  Kazutoshi Ueda ,  Nobuaki Sato ,  Koji Shimizu

IPC: H01L23/495 ,  H01L23/498 ,  H01L23/00

Abstract: [Problem] To provide an electrode connection structure and the like in which a plurality of elongated leads are arranged in parallel and a longitudinal side surface of each lead is connected to an electrode by plating treatment with high quality.[Solution] An electrode connection structure in which a semiconductor chip 12 electrode and/or a substrate electrode is connected to a plurality of elongated leads 11 of a lead frame 10 by plating. The plurality of elongated leads 11 of the lead frame 10 are arranged in parallel, and a longitudinal side surface of each lead 11 is connected to the semiconductor chip 12 electrode and/or the substrate electrode by plating. At a connection portion of a first connection surface 13 of the semiconductor chip 12 electrode and/or the substrate electrode, the first connection surface 13 being connected to the leads 11, and a second connection surface 14 in the longitudinal side surface of each lead 11, the second connection surface 14 being connected to the first connection surface 13, a distance between the first connection surface 13 and the second connection surface 14 continuously increases from an edge portion 15 of the second connection surface 14, the edge portion 15 being in contact with the first connection surface 13, toward an outer portion 16 of the second connection surface 14.

公开(公告)号：US11152286B2

公开(公告)日：2021-10-19

申请号：US16254049

申请日：2019-01-22

Applicant: WASEDA UNIVERSITY

Inventor： Kohei Tatsumi

IPC: H01L23/00 ,  H01L23/482 ,  H01L23/12 ,  H01L23/492 ,  H01L21/56 ,  H01L23/367 ,  H01L25/00 ,  H01L21/48 ,  H01L25/07 ,  H01L25/18 ,  H01L23/538

Abstract: A power semiconductor module device includes: a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane; an insulating support that fixes the semiconductor elements; a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side. The first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.

公开(公告)号：US20160225730A1

公开(公告)日：2016-08-04

申请号：US15094759

申请日：2016-04-08

Applicant: Waseda University

Inventor： Kohei Tatsumi

IPC: H01L23/00

CPC classification number: H01L24/10 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/76 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05173 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05673 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/13012 ,  H01L2224/13017 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13411 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/24225 ,  H01L2224/24245 ,  H01L2224/245 ,  H01L2224/2499 ,  H01L2224/29012 ,  H01L2224/29017 ,  H01L2224/29147 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40991 ,  H01L2224/40996 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/48991 ,  H01L2224/48996 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/73273 ,  H01L2224/73277 ,  H01L2224/75754 ,  H01L2224/76754 ,  H01L2224/81002 ,  H01L2224/81205 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81473 ,  H01L2224/81815 ,  H01L2224/8184 ,  H01L2224/81901 ,  H01L2224/8192 ,  H01L2224/82002 ,  H01L2224/82101 ,  H01L2224/82399 ,  H01L2224/83002 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83473 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83901 ,  H01L2224/8392 ,  H01L2224/8492 ,  H01L2224/85205 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/9201 ,  H01L2924/00011 ,  H01L2924/3656 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01045 ,  H01L2224/18 ,  H01L2224/24 ,  H01L2224/82 ,  H01L2224/83205

Abstract: An electrode connection structure includes: a first electrode of an electrical circuit; and a second electrode of the electrical circuit that is electrically connected to the first electrode. The first and second electrodes are oppositely disposed in direct or indirect contact with each other. A plated lamination is substantially uniformly formed by plating process from a surface of a contact region and opposed surfaces of the first and second electrodes. A void near the surface of the contact region is filled by formation of the plated lamination. Portions of the plated lamination formed from the opposed surfaces of the first and second electrodes in a region other than the contact region are not joined together.

Abstract translation: 电极连接结构包括：电路的第一电极; 以及电连接到第一电极的电路的第二电极。 第一和第二电极彼此直接或间接地相对地设置。 通过从接触区域的表面和第一和第二电极的相对表面的电镀工艺基本均匀地形成电镀层叠体。 接触区域表面附近的空隙通过形成电镀层而被填充。 在接触区域以外的区域中由第一电极和第二电极的相对表面形成的电镀层的部分不接合在一起。

公开(公告)号：US20210225794A1

公开(公告)日：2021-07-22

申请号：US17187452

申请日：2021-02-26

Applicant: WASEDA UNIVERSITY

Inventor： Kohei Tatsumi ,  Yasunori Tanaka

IPC: H01L23/00

Abstract: A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

公开(公告)号：US09059003B2

公开(公告)日：2015-06-16

申请号：US14364555

申请日：2013-02-22

Applicant: NIPPON MICROMETAL CORPORATION ,  WASEDA UNIVERSITY

Inventor： Kohei Tatsumi ,  Takashi Yamada ,  Daizo Oda

IPC: H01L23/00

CPC classification number: H01L24/05 ,  H01L24/03 ,  H01L24/43 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/03444 ,  H01L2224/0345 ,  H01L2224/0346 ,  H01L2224/04042 ,  H01L2224/05007 ,  H01L2224/05073 ,  H01L2224/05082 ,  H01L2224/05083 ,  H01L2224/05084 ,  H01L2224/05118 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05169 ,  H01L2224/05171 ,  H01L2224/05172 ,  H01L2224/05184 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05666 ,  H01L2224/05669 ,  H01L2224/05671 ,  H01L2224/05672 ,  H01L2224/05684 ,  H01L2224/32245 ,  H01L2224/43 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/43986 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45611 ,  H01L2224/45618 ,  H01L2224/45624 ,  H01L2224/45639 ,  H01L2224/45644 ,  H01L2224/45647 ,  H01L2224/45655 ,  H01L2224/45664 ,  H01L2224/45666 ,  H01L2224/45669 ,  H01L2224/45671 ,  H01L2224/45672 ,  H01L2224/45684 ,  H01L2224/45686 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48463 ,  H01L2224/48472 ,  H01L2224/48818 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48866 ,  H01L2224/48869 ,  H01L2224/48871 ,  H01L2224/48872 ,  H01L2224/48884 ,  H01L2224/73265 ,  H01L2224/78313 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15747 ,  H01L2924/20103 ,  H01L2924/351 ,  H01L2924/00015 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01202 ,  H01L2924/20107 ,  H01L2924/20106 ,  H01L2224/29099 ,  H01L2924/01023 ,  H01L2924/01074 ,  H01L2924/01049

Abstract: It is an object of the present invention to provide a power semiconductor device, which is capable of being operable regardless of thermal stress generation, reducing a heat generation from wire, securing the reliability of bonding portion when the device is used for dealing with a large amount current and/or under a high temperature atmosphere, a method of manufacturing the device and a bonding wire. In a power semiconductor device in which a metal electrode (die electrode 3) on a power semiconductor die 2 and another metal electrode (connection electrode 4) are connected by metal wire 5 using wedge bonding connection, the metal wire is Ag or Ag alloy wire of which diameter is greater than 50 μm and not greater than 2 mm and the die 3 has thereon one or more metal and/or alloy layers, each of the layer(s) being 50 Å or more in thickness and a metal for the layer is selected from Ni, Cr, Cu, Pd, V, Ti, Pt, Zn, Ag, Au, W and Al.

Abstract translation: 本发明的目的是提供一种功率半导体器件，该功率半导体器件能够在不受热应力产生的情况下运行，从而减少线材的发热，确保当器件用于处理大的时候的接合部分的可靠性 量电流和/或在高温气氛下，制造该装置的方法和接合线。 在功率半导体器件中，功率半导体管芯2上的金属电极（管芯电极3）和另一个金属电极（连接电极4）通过金属线5使用楔形接合连接，金属线是Ag或Ag合金线 其直径大于50μm且不大于2mm，并且模具3上具有一个或多个金属和/或合金层，每个层的厚度均为50或更大，并且该层的金属 选自Ni，Cr，Cu，Pd，V，Ti，Pt，Zn，Ag，Au，W和Al。

公开(公告)号：US11810885B2

公开(公告)日：2023-11-07

申请号：US17187452

申请日：2021-02-26

Applicant: WASEDA UNIVERSITY

Inventor： Kohei Tatsumi ,  Yasunori Tanaka

IPC: H01L23/00 ,  H01L23/495

CPC classification number: H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L23/49582 ,  H01L24/05 ,  H01L2224/05124 ,  H01L2224/27464 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/29324 ,  H01L2224/29355 ,  H01L2224/32245 ,  H01L2224/8384 ,  H01L2224/83091 ,  H01L2224/83099 ,  H01L2224/83192 ,  H01L2224/83395 ,  H01L2224/83455 ,  H01L2224/83951 ,  H01L2924/10272 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/3512

Abstract: A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

公开(公告)号：US10903146B2

公开(公告)日：2021-01-26

申请号：US16083389

申请日：2017-03-07

Applicant: WASEDA UNIVERSITY ,  MITSUI HIGH-TEC, INC.

Inventor： Kohei Tatsumi ,  Kazutoshi Ueda ,  Nobuaki Sato ,  Koji Shimizu

IPC: H01L23/495 ,  H01L23/50 ,  H01L23/498 ,  H01L23/00

Abstract: [Problem] To provide an electrode connection structure and the like in which a plurality of elongated leads are arranged in parallel and a longitudinal side surface of each lead is connected to an electrode by plating treatment with high quality.
[Solution] An electrode connection structure in which a semiconductor chip 12 electrode and/or a substrate electrode is connected to a plurality of elongated leads 11 of a lead frame 10 by plating. The plurality of elongated leads 11 of the lead frame 10 are arranged in parallel, and a longitudinal side surface of each lead 11 is connected to the semiconductor chip 12 electrode and/or the substrate electrode by plating. At a connection portion of a first connection surface 13 of the semiconductor chip 12 electrode and/or the substrate electrode, the first connection surface 13 being connected to the leads 11, and a second connection surface 14 in the longitudinal side surface of each lead 11, the second connection surface 14 being connected to the first connection surface 13, a distance between the first connection surface 13 and the second connection surface 14 continuously increases from an edge portion 15 of the second connection surface 14, the edge portion 15 being in contact with the first connection surface 13, toward an outer portion 16 of the second connection surface 14.

公开(公告)号：US20190198428A1

公开(公告)日：2019-06-27

申请号：US16254049

申请日：2019-01-22

Applicant: WASEDA UNIVERSITY

Inventor： Kohei Tatsumi

IPC: H01L23/482 ,  H01L23/12 ,  H01L23/492 ,  H01L25/07 ,  H01L23/367 ,  H01L25/00 ,  H01L21/48 ,  H01L21/56

CPC classification number: H01L23/482 ,  H01L21/4853 ,  H01L21/561 ,  H01L23/12 ,  H01L23/367 ,  H01L23/492 ,  H01L25/07 ,  H01L25/072 ,  H01L25/18 ,  H01L25/50

Abstract: A power semiconductor module device includes: a plurality of semiconductor elements that are arranged at intervals and flush with each other on a plane; an insulating support that fixes the semiconductor elements; a first thick-film plating layer that is formed as a first-surface-side electrode that electrically connects the semiconductor elements to each other on at least one surface of a front surface side and a rear surface side. The first thick-film plating layer supports the semiconductor elements from at least one of an upper direction and a lower direction.

公开(公告)号：US09960140B2

公开(公告)日：2018-05-01

申请号：US15024682

申请日：2014-11-11

Applicant: NIPPON STEEL & SUMITOMO METAL CORPORATION ,  WASEDA University

Inventor： Kohei Tatsumi ,  Shinji Ishikawa ,  Norie Matsubara ,  Masamoto Tanaka

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  B23K35/28 ,  B23K35/30 ,  C22C5/06 ,  C22C5/08 ,  C22C21/00 ,  B22F7/08 ,  B23K35/02 ,  C22C19/00

CPC classification number: H01L24/32 ,  B22F7/08 ,  B22F2999/00 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/28 ,  B23K35/30 ,  B23K35/3033 ,  C22C5/06 ,  C22C5/08 ,  C22C19/00 ,  C22C21/00 ,  H01L24/27 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/03436 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/04026 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/2741 ,  H01L2224/29083 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29294 ,  H01L2224/29311 ,  H01L2224/29318 ,  H01L2224/29339 ,  H01L2224/29344 ,  H01L2224/29347 ,  H01L2224/29355 ,  H01L2224/2949 ,  H01L2224/29639 ,  H01L2224/29644 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/83055 ,  H01L2224/83065 ,  H01L2224/83075 ,  H01L2224/83101 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83424 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8384 ,  H01L2224/85207 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/351 ,  H01L2924/3512 ,  H01L2924/00015 ,  B22F1/0018 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01014 ,  H01L2924/0104 ,  H01L2924/01026 ,  H01L2924/01025 ,  H01L2924/01047 ,  H01L2924/01015 ,  H01L2924/01079 ,  H01L2924/0103 ,  H01L2924/0105 ,  H01L2924/00012

Abstract: The present invention can give a joining structure using metal nanoparticles to join the same types or different types of metal where when one surface metal is Al based, the parts are joined through a joining layer containing Ni nanoparticles, whereby a good joining strength is obtained. Further, by using two joining layers (6, 8) including metal nanoparticles to sandwich metal foil (7) so as to form a joining layer and joining the same type or different types of surface metals (3-4) through this joining layer, it is possible to ease the thermal stress due to the difference in amounts of thermal expansion of joined members which have two surface metals.

公开(公告)号：US09601448B2

公开(公告)日：2017-03-21

申请号：US15094759

申请日：2016-04-08

Applicant: Waseda University

Inventor： Kohei Tatsumi

IPC: H01L23/48 ,  H01L21/44 ,  H01L23/00 ,  H01L21/52 ,  H01L23/498

CPC classification number: H01L24/10 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/76 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05173 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05673 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/13012 ,  H01L2224/13017 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13411 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/24225 ,  H01L2224/24245 ,  H01L2224/245 ,  H01L2224/2499 ,  H01L2224/29012 ,  H01L2224/29017 ,  H01L2224/29147 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40991 ,  H01L2224/40996 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/48991 ,  H01L2224/48996 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/73273 ,  H01L2224/73277 ,  H01L2224/75754 ,  H01L2224/76754 ,  H01L2224/81002 ,  H01L2224/81205 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81473 ,  H01L2224/81815 ,  H01L2224/8184 ,  H01L2224/81901 ,  H01L2224/8192 ,  H01L2224/82002 ,  H01L2224/82101 ,  H01L2224/82399 ,  H01L2224/83002 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83473 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83901 ,  H01L2224/8392 ,  H01L2224/8492 ,  H01L2224/85205 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/9201 ,  H01L2924/00011 ,  H01L2924/3656 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01045 ,  H01L2224/18 ,  H01L2224/24 ,  H01L2224/82 ,  H01L2224/83205

Abstract: An electrode connection structure includes: a first electrode of an electrical circuit; and a second electrode of the electrical circuit that is electrically connected to the first electrode. The first and second electrodes are oppositely disposed in direct or indirect contact with each other. A plated lamination is substantially uniformly formed by plating process from a surface of a contact region and opposed surfaces of the first and second electrodes. A void near the surface of the contact region is filled by formation of the plated lamination. Portions of the plated lamination formed from the opposed surfaces of the first and second electrodes in a region other than the contact region are not joined together.