公开(公告)号：US11810885B2

公开(公告)日：2023-11-07

申请号：US17187452

申请日：2021-02-26

申请人： WASEDA UNIVERSITY

发明人： Kohei Tatsumi ,  Yasunori Tanaka

IPC分类号： H01L23/00 ,  H01L23/495

CPC分类号： H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L23/49582 ,  H01L24/05 ,  H01L2224/05124 ,  H01L2224/27464 ,  H01L2224/29247 ,  H01L2224/29255 ,  H01L2224/29324 ,  H01L2224/29355 ,  H01L2224/32245 ,  H01L2224/8384 ,  H01L2224/83091 ,  H01L2224/83099 ,  H01L2224/83192 ,  H01L2224/83395 ,  H01L2224/83455 ,  H01L2224/83951 ,  H01L2924/10272 ,  H01L2924/15738 ,  H01L2924/15747 ,  H01L2924/3512

摘要： A semiconductor element bonding structure capable of strongly bonding a semiconductor element and an object to be bonded and relaxing thermal stress caused by a difference in thermal expansion, by interposing metal particles and Ni between the semiconductor element and the object to be bonded, the metal particles having a lower hardness than Ni and having a micro-sized particle diameter. A plurality of metal particles 5 (aluminum (Al), for example) having a lower hardness than nickel (Ni) and having a micro-sized particle diameter are interposed between a semiconductor chip 3 and a substrate 2 to be bonded to the semiconductor chip 3, and the metal particles 5 are fixedly bonded by the nickel (Ni). Optionally, aluminum (Al) or an aluminum alloy (Al alloy) is used as the metal particles 5, and aluminum (Al) or an aluminum alloy (Al alloy) is used on the surface of the semiconductor chip 3 and/or the surface of the substrate 2.

公开(公告)号：US09648720B2

公开(公告)日：2017-05-09

申请号：US13947525

申请日：2013-07-22

申请人： Frank Ferdinandi ,  Rodney Edward Smith ,  Mark Robson Humphries

发明人： Frank Ferdinandi ,  Rodney Edward Smith ,  Mark Robson Humphries

IPC分类号： H05K3/28 ,  H05K1/02 ,  H05K3/00 ,  H01L23/00

CPC分类号： H05K1/02 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/81024 ,  H01L2224/81395 ,  H01L2224/81815 ,  H01L2224/83024 ,  H01L2224/83205 ,  H01L2224/83395 ,  H01L2224/83815 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85395 ,  H01L2224/85447 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/00 ,  H05K3/282 ,  H05K3/285 ,  H05K3/288 ,  H05K3/3484 ,  H05K3/3489 ,  H05K3/3494 ,  H05K2201/015 ,  H05K2201/0179 ,  H05K2203/092 ,  H05K2203/107 ,  H05K2203/1338 ,  H05K2203/1366 ,  H05K2203/1372 ,  H05K2203/1383 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A method including: attaching a plurality of conductive tracks to at least one surface of a substrate, depositing a coating comprising at least one halo-hydrocarbon polymer on the at least one surface of the substrate, and soldering through the coating.

公开(公告)号：US12094850B2

公开(公告)日：2024-09-17

申请号：US17595826

申请日：2020-05-28

申请人： OSAKA UNIVERSITY

发明人： Katsuaki Suganuma ,  Chuantong Chen ,  Zheng Zhang

IPC分类号： H01L23/00

CPC分类号： H01L24/83 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29339 ,  H01L2224/29394 ,  H01L2224/29499 ,  H01L2224/32227 ,  H01L2224/83192 ,  H01L2224/83395 ,  H01L2224/83487 ,  H01L2224/8384 ,  H01L2924/05432

摘要： A bonding structure production method for producing a bonding structure (100) includes at least bonding a semiconductor element (30) and a substrate (10) using a silver paste. The substrate (10) includes a die attachment portion (12) to which the semiconductor element (30) is to be bonded. The die attachment portion (12) includes an alumina layer (16) serving as a surface layer on a bonding side of the die attachment portion (12) to which the semiconductor element (30) is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.

公开(公告)号：US20120007234A1

公开(公告)日：2012-01-12

申请号：US12967839

申请日：2010-12-14

申请人： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

发明人： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H01L23/48 ,  H01L21/56

CPC分类号： H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/81395 ,  H01L2224/81439 ,  H01L2224/83395 ,  H01L2224/83439 ,  H01L2224/85001 ,  H01L2224/85395 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the metal studs. The first encapsulant is bonded with the metal studs directly. Each of the bonding pads and one of the metal studs corresponding to the bonding pad form a T-shaped structure. Therefore, bonding force between the metal studs and the first encapsulant is enhanced such that delamination is avoided. Die mounting, wire-bonding and molding processes are performed subsequently. Since the half-etched grooves are filled with the first encapsulant, the drawback of having pliable metallic carrier that makes transportation difficult to carry out as encountered in prior techniques is overcome, and the manufacturing cost is educed by not requiring the use of costly metals as an etching resist layer.

摘要翻译： 其上形成有芯片载体的半导体封装及其制造方法。 金属载体被半蚀刻以形成对应于凹槽的多个凹槽和金属螺柱。 凹槽填充有第一密封剂，并且在金属螺柱上形成多个接合焊盘。 第一密封剂直接与金属螺栓结合。 每个接合焊盘和对应于接合焊盘的一个金属螺柱形成T形结构。 因此，金属螺柱和第一密封剂之间的结合力增强，从而避免分层。 随后进行模具安装，引线接合和成型工艺。 由于半蚀刻槽被第一密封剂填充，因此克服了使现有技术中遇到的导致难以进行运输的柔韧金属载体的缺陷，并且通过不需要使用昂贵的金属来促进制造成本 抗蚀剂层。

公开(公告)号：US20100025091A1

公开(公告)日：2010-02-04

申请号：US12526586

申请日：2008-02-18

申请人： Frank Ferdinandi ,  Rodney Edward Smith ,  Mark Robson Humphries

发明人： Frank Ferdinandi ,  Rodney Edward Smith ,  Mark Robson Humphries

IPC分类号： H05K1/09 ,  H05K1/02 ,  B23K37/00 ,  B05D5/12 ,  C23C16/513

CPC分类号： H05K1/02 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45686 ,  H01L2224/4569 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48245 ,  H01L2224/48247 ,  H01L2224/48647 ,  H01L2224/48747 ,  H01L2224/48847 ,  H01L2224/81024 ,  H01L2224/81395 ,  H01L2224/81815 ,  H01L2224/83024 ,  H01L2224/83205 ,  H01L2224/83395 ,  H01L2224/83815 ,  H01L2224/85203 ,  H01L2224/85207 ,  H01L2224/85395 ,  H01L2224/85447 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H05K3/00 ,  H05K3/282 ,  H05K3/285 ,  H05K3/288 ,  H05K3/3484 ,  H05K3/3489 ,  H05K3/3494 ,  H05K2201/015 ,  H05K2201/0179 ,  H05K2203/092 ,  H05K2203/107 ,  H05K2203/1338 ,  H05K2203/1366 ,  H05K2203/1372 ,  H05K2203/1383 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A printed circuit board to which a localised solder connection is to be made, the surface of said printed circuit board having a continuous or non-continuous coating of a composition comprising a halo-hydrocarbon polymer at a thickness of from 1 nm to 10 μm.

摘要翻译： 印刷电路板将要制成局部焊接连接，所述印刷电路板的表面具有包含厚度为1nm至10μm的卤代烃聚合物的组合物的连续或非连续涂层。

公开(公告)号：US20240178125A1

公开(公告)日：2024-05-30

申请号：US18071164

申请日：2022-11-29

申请人： TEXAS INSTRUMENTS INCORPORATED

发明人： Masamitsu Matsuura

IPC分类号： H01L23/498 ,  H01L21/48 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49861 ,  H01L21/4803 ,  H01L23/3121 ,  H01L24/05 ,  H01L24/29 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L21/561 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/29006 ,  H01L2224/29012 ,  H01L2224/29014 ,  H01L2224/2919 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45664 ,  H01L2224/48106 ,  H01L2224/48225 ,  H01L2224/48464 ,  H01L2224/48465 ,  H01L2224/48479 ,  H01L2224/4848 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/83395 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/8346 ,  H01L2224/83464 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85395 ,  H01L2224/85439 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/85455 ,  H01L2224/8546 ,  H01L2224/85464 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/01404 ,  H01L2924/0665

摘要： In a described example, an apparatus includes: a metal leadframe including a dielectric die support formed in a central portion of the leadframe, and having metal leads extending from the central portion, portions of the metal leads extending into the central portion contacted by the dielectric die support; die attach material over the dielectric die support; a semiconductor die mounted to the dielectric die support by the die attach material, the semiconductor die having bond pads on a device side surface facing away from the dielectric die support; electrical connections extending from the bond pads to metal leads of the leadframe; and mold compound covering the semiconductor die, the electrical connections, the dielectric die support, and portions of the metal leads, the mold compound forming a package body.

公开(公告)号：US20230282611A1

公开(公告)日：2023-09-07

申请号：US18159272

申请日：2023-01-25

申请人： FUJI ELECTRIC CO., LTD.

发明人： Hiroki TAKAHASHI ,  Tsunehiro NAKAJIMA ,  Takashi SAITO

IPC分类号： H01L23/00 ,  H01L25/07 ,  H01L25/00

CPC分类号： H01L24/83 ,  H01L24/95 ,  H01L24/32 ,  H01L24/29 ,  H01L25/072 ,  H01L25/50 ,  H01L2224/95053 ,  H01L2224/83054 ,  H01L2224/83201 ,  H01L2224/8384 ,  H01L2224/83815 ,  H01L2224/83948 ,  H01L2224/83455 ,  H01L2924/0132 ,  H01L2224/83463 ,  H01L2924/01005 ,  H01L2224/83439 ,  H01L2224/83395 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2924/13055 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/13091 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L24/40 ,  H01L24/73 ,  H01L2224/73263 ,  H01L2224/40225 ,  H01L2224/73265 ,  H01L2224/73221 ,  H01L24/48 ,  H01L2224/48225 ,  H01L2224/48106 ,  H01L24/45 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45124 ,  H01L24/37 ,  H01L2224/37147 ,  H01L2224/37655 ,  H01L2224/37638

摘要： When a semiconductor unit is heated, a heater having a flat heating surface is used for performing heating in a state in which a lower surface of an insulated circuit board is placed on the heating surface. When the semiconductor unit is cooled, a cooler having a cooling surface including a pair of support portions is used for performing cooling in which a lower surface of a pair of outer regions of the insulated circuit board are respectively placed to be contact with the pair of support portions, and in which a central region between the pair of outer regions of the insulated circuit board is pressed downward so as to be downward convex.

公开(公告)号：US09190296B2

公开(公告)日：2015-11-17

申请号：US14319321

申请日：2014-06-30

申请人： Siliconware Precision Industries Co., Ltd.

发明人： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H01L21/44 ,  H01L21/48 ,  H01L21/50 ,  H01L21/56 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/81395 ,  H01L2224/81439 ,  H01L2224/83395 ,  H01L2224/83439 ,  H01L2224/85001 ,  H01L2224/85395 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the metal studs. The first encapsulant is bonded with the metal studs directly. Each of the bonding pads and one of the metal studs corresponding to the bonding pad form a T-shaped structure. Therefore, bonding force between the metal studs and the first encapsulant is enhanced such that delamination is avoided. Die mounting, wire-bonding and molding processes are performed subsequently. Since the half-etched grooves are filled with the first encapsulant, the drawback of having pliable metallic carrier that makes transportation difficult to carry out as encountered in prior techniques is overcome, and the manufacturing cost is educed by not requiring the use of costly metals as an etching resist layer.

摘要翻译： 其上形成有芯片载体的半导体封装及其制造方法。 金属载体被半蚀刻以形成对应于凹槽的多个凹槽和金属螺柱。 凹槽填充有第一密封剂，并且在金属螺柱上形成多个接合焊盘。 第一密封剂直接与金属螺栓结合。 每个接合焊盘和对应于接合焊盘的一个金属螺柱形成T形结构。 因此，金属螺柱和第一密封剂之间的结合力增强，从而避免分层。 随后进行模具安装，引线接合和成型工艺。 由于半蚀刻槽被第一密封剂填充，因此克服了使现有技术中遇到的导致难以进行运输的柔韧金属载体的缺陷，并且通过不需要使用昂贵的金属来促进制造成本 抗蚀剂层。

公开(公告)号：US20140315351A1

公开(公告)日：2014-10-23

申请号：US14319321

申请日：2014-06-30

申请人： Siliconware Precision Industries Co., Ltd.

发明人： Yueh-Ying Tsai ,  Fu-Di Tang ,  Chien-Ping Huang ,  Chun-Chi Ke

IPC分类号： H01L21/48 ,  H01L23/00

CPC分类号： H01L21/486 ,  H01L21/565 ,  H01L21/568 ,  H01L23/3114 ,  H01L23/3135 ,  H01L23/3142 ,  H01L24/11 ,  H01L24/16 ,  H01L24/48 ,  H01L24/81 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/48247 ,  H01L2224/484 ,  H01L2224/73265 ,  H01L2224/81395 ,  H01L2224/81439 ,  H01L2224/83395 ,  H01L2224/83439 ,  H01L2224/85001 ,  H01L2224/85395 ,  H01L2224/85439 ,  H01L2924/00014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/15311 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/351 ,  H01L2224/45099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package without a chip carrier formed thereon and a fabrication method thereof. A metallic carrier is half-etched to form a plurality of grooves and metal studs corresponding to the grooves. The grooves are filled with a first encapsulant and a plurality of bonding pads are formed on the metal studs. The first encapsulant is bonded with the metal studs directly. Each of the bonding pads and one of the metal studs corresponding to the bonding pad form a T-shaped structure. Therefore, bonding force between the metal studs and the first encapsulant is enhanced such that delamination is avoided. Die mounting, wire-bonding and molding processes are performed subsequently. Since the half-etched grooves are filled with the first encapsulant, the drawback of having pliable metallic carrier that makes transportation difficult to carry out as encountered in prior techniques is overcome, and the manufacturing cost is educed by not requiring the use of costly metals as an etching resist layer.

摘要翻译： 其上形成有芯片载体的半导体封装及其制造方法。 金属载体被半蚀刻以形成对应于凹槽的多个凹槽和金属螺柱。 凹槽填充有第一密封剂，并且在金属螺柱上形成多个接合焊盘。 第一密封剂直接与金属螺栓结合。 每个接合焊盘和对应于接合焊盘的一个金属螺柱形成T形结构。 因此，金属螺柱和第一密封剂之间的结合力增强，从而避免分层。 随后进行模具安装，引线接合和成型工艺。 由于半蚀刻槽被第一密封剂填充，因此克服了使现有技术中遇到的导致难以进行运输的柔韧金属载体的缺陷，并且通过不需要使用昂贵的金属来促进制造成本 抗蚀剂层。

公开(公告)号：US20170207187A1

公开(公告)日：2017-07-20

申请号：US15364702

申请日：2016-11-30

申请人： FUJI ELECTRIC CO., LTD.

发明人： Shinji SANO ,  Yoshihiro KODAIRA ,  Masayuki SOUTOME ,  Kazunaga ONISHI

IPC分类号： H01L23/00 ,  H01L21/48

CPC分类号： H01L24/27 ,  H01L21/4853 ,  H01L21/4857 ,  H01L21/4875 ,  H01L23/3735 ,  H01L23/48 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/2712 ,  H01L2224/2746 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29116 ,  H01L2224/29561 ,  H01L2224/2969 ,  H01L2224/321 ,  H01L2224/32227 ,  H01L2224/32501 ,  H01L2224/83002 ,  H01L2224/83065 ,  H01L2224/83101 ,  H01L2224/83192 ,  H01L2224/83395 ,  H01L2224/83815 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01051 ,  H01L2924/01028 ,  H01L2924/01032 ,  H01L2924/01015 ,  H01L2924/01049 ,  H01L2924/01083 ,  H01L2924/0103 ,  H01L2924/01082 ,  H01L2924/0105

摘要： There is provided a method for producing a member for semiconductor device which can reduce generation of a large number of voids in a solder-bonded portion without increasing production cost. The method includes the step of preparing a first member including a metal portion capable of being bonded by solder and the step of coating the surface of the metal portion of the first member with a treatment agent to form a treated coating which vaporizes at a temperature lower than or equal to the solidus temperature of the solder.