公开(公告)号：US09847253B2

公开(公告)日：2017-12-19

申请号：US12757750

申请日：2010-04-09

申请人： Byung Tai Do ,  Heap Hoe Kuan ,  Seng Guan Chow

发明人： Byung Tai Do ,  Heap Hoe Kuan ,  Seng Guan Chow

IPC分类号： H01L21/00 ,  H01L21/768 ,  H01L23/31 ,  H01L23/48 ,  H01L23/00 ,  H01L25/03 ,  H01L25/065 ,  H01L25/10 ,  H01L23/538

CPC分类号： H01L21/76898 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/5389 ,  H01L24/18 ,  H01L24/19 ,  H01L24/24 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/82 ,  H01L25/03 ,  H01L25/0657 ,  H01L25/105 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/16 ,  H01L2224/16145 ,  H01L2224/16227 ,  H01L2224/16235 ,  H01L2224/18 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48472 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/06513 ,  H01L2225/06524 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/10161 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： A semiconductor package-on-package (PoP) device includes a first die incorporating a through-hole via (THV) disposed along a peripheral surface of the first die. The first die is disposed over a substrate or leadframe structure. A first semiconductor package is electrically connected to the THV of the first die, or electrically connected to the substrate or leadframe structure. An encapsulant is formed over a portion of the first die and the first semiconductor package.

公开(公告)号：US09831204B2

公开(公告)日：2017-11-28

申请号：US15635478

申请日：2017-06-28

申请人： ROHM CO., LTD.

发明人： Kazumasa Tanida ,  Osamu Miyata

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L21/56

CPC分类号： H01L24/16 ,  H01L21/563 ,  H01L23/3142 ,  H01L23/3157 ,  H01L23/3185 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49838 ,  H01L23/52 ,  H01L23/562 ,  H01L24/01 ,  H01L24/17 ,  H01L24/28 ,  H01L24/32 ,  H01L24/73 ,  H01L24/75 ,  H01L24/81 ,  H01L24/83 ,  H01L51/5246 ,  H01L2224/01 ,  H01L2224/0554 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/26175 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/75252 ,  H01L2224/81191 ,  H01L2224/81815 ,  H01L2224/83102 ,  H01L2224/92125 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01075 ,  H01L2924/14 ,  H01L2924/153 ,  H01L2924/183 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2224/0555 ,  H01L2224/0556

摘要： A semiconductor device includes a wiring board, a semiconductor chip, and a connecting member provided between a surface of the wiring board and a functional surface of the semiconductor chip. The connecting member extends a distance between the wiring board surface and the functional surface. A sealing material seals a gap space between the wiring board and the semiconductor chip. An electrode is formed at the wiring board surface and arranged outside of an outer periphery of the sealing material. A lateral distance between an outer periphery of the semiconductor chip and the outer periphery of the sealing material is between 0.1 mm and a lateral distance from the outer periphery of the semiconductor chip to the electrode.

公开(公告)号：US09824996B2

公开(公告)日：2017-11-21

申请号：US14845357

申请日：2015-09-04

申请人： RENESAS ELECTRONICS CORPORATION

发明人： Yukihiro Satou ,  Toshiyuki Hata

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/00 ,  H01L23/495 ,  H01L23/31 ,  H01L29/78

CPC分类号： H01L24/49 ,  H01L23/3107 ,  H01L23/3142 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L24/06 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/97 ,  H01L29/7827 ,  H01L2224/02166 ,  H01L2224/04034 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05155 ,  H01L2224/05553 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/0603 ,  H01L2224/37124 ,  H01L2224/40091 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45014 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4846 ,  H01L2224/48472 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48744 ,  H01L2224/4903 ,  H01L2224/49051 ,  H01L2224/49111 ,  H01L2224/4912 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/49431 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2224/85 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10161 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/1811 ,  H01L2924/2075 ,  H01L2924/20752 ,  H01L2924/20753 ,  H01L2924/20754 ,  H01L2924/20755 ,  H01L2924/20756 ,  H01L2924/20757 ,  H01L2924/20758 ,  H01L2924/20759 ,  H01L2924/2076 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a header, a semiconductor chip fixed to the header constituting a MOSFET, and a sealing body of insulating resin which covers the semiconductor chip, the header and the like, and further includes a drain lead contiguously formed with the header and projects from one side surface of the sealing body, and a source lead and a gate lead which project in parallel from one side surface of the sealing body, and wires which are positioned in the inside of the sealing body and connect electrodes on an upper surface of the semiconductor chip and the source lead and the gate lead, with a gate electrode pad arranged at a position from the gate lead and the source lead farther than a source electrode pad.

公开(公告)号：US09818785B2

公开(公告)日：2017-11-14

申请号：US15230281

申请日：2016-08-05

申请人： Sony Corporation

发明人： Hiroshi Takahashi ,  Taku Umebayashi

IPC分类号： H01L27/146 ,  H01L21/768 ,  H01L23/48 ,  H01L23/00 ,  H01L31/02 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/18 ,  H01L21/762

CPC分类号： H01L27/14636 ,  H01L21/76251 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L27/14632 ,  H01L27/14634 ,  H01L27/1464 ,  H01L27/14645 ,  H01L27/14687 ,  H01L27/1469 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/02325 ,  H01L31/18 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/45124 ,  H01L2224/45147 ,  H01L2224/48463 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10253 ,  H01L2924/12043 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/48 ,  H01L2924/01005 ,  H01L2924/01033 ,  H01L2224/45099

摘要： A semiconductor device having a first semiconductor section including a first wiring layer at one side thereof; a second semiconductor section including a second wiring layer at one side thereof, the first and second semiconductor sections being secured together with the respective first and second wiring layer sides of the first and second semiconductor sections facing each other; a conductive material extending through the first semiconductor section to the second wiring layer of the second semiconductor section and by means of which the first and second wiring layers are in electrical communication; and an opening, other than the opening for the conductive material, which extends through the first semiconductor section to the second wiring layer.

公开(公告)号：US20170323864A1

公开(公告)日：2017-11-09

申请号：US15107417

申请日：2015-06-05

申请人： NIPPON MICROMETAL CORPORATION ,  NIPPON STEEL & SUMIKIN MATERIALS CO., LTD.

发明人： Daizo ODA ,  Motoki ETO ,  Takashi YAMADA ,  Teruo HAIBARA ,  Ryo OISHI ,  Tomohiro UNO ,  Tetsuya OYAMADA

IPC分类号： H01L23/00

CPC分类号： H01L24/45 ,  C22C9/00 ,  C22F1/08 ,  H01L24/05 ,  H01L24/43 ,  H01L24/48 ,  H01L24/85 ,  H01L2224/05624 ,  H01L2224/4312 ,  H01L2224/43125 ,  H01L2224/4321 ,  H01L2224/43848 ,  H01L2224/45 ,  H01L2224/45005 ,  H01L2224/45015 ,  H01L2224/45109 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/45565 ,  H01L2224/45572 ,  H01L2224/45609 ,  H01L2224/45644 ,  H01L2224/45664 ,  H01L2224/48011 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48824 ,  H01L2224/85045 ,  H01L2224/85054 ,  H01L2224/85065 ,  H01L2224/85075 ,  H01L2224/8509 ,  H01L2224/85203 ,  H01L2224/85439 ,  H01L2924/00011 ,  H01L2924/01005 ,  H01L2924/01012 ,  H01L2924/01015 ,  H01L2924/01028 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01078 ,  H01L2924/10253 ,  H01L2924/1576 ,  H01L2924/181 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20108 ,  H01L2924/20109 ,  H01L2924/20111 ,  H01L2924/20752 ,  H01L2924/01204 ,  H01L2924/01049 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/013 ,  H01L2924/00013 ,  H01L2924/01001 ,  H01L2924/01007 ,  H01L2924/20105 ,  H01L2924/20656 ,  H01L2924/00 ,  H01L2924/2011 ,  H01L2924/01004 ,  H01L2924/01033

摘要： There is provided a Cu bonding wire having a Pd coating layer on a surface thereof, that improves bonding reliability of a ball bonded part in a high-temperature and high-humidity environment and is suitable for on-vehicle devices.The bonding wire for a semiconductor device includes a Cu alloy core material and a Pd coating layer formed on a surface of the Cu alloy core material, and the bonding wire contains In of 0.011 to 1.2% by mass and has the Pd coating layer of a thickness of 0.015 to 0.150 μm. With this configuration, it is able to increase the bonding longevity of a ball bonded part in a high-temperature and high-humidity environment, and thus to improve the bonding reliability. When the Cu alloy core material contains one or more elements of Pt, Pd, Rh and Ni in an amount, for each element, of 0.05 to 1.2% by mass, it is able to increase the reliability of a ball bonded part in a high-temperature environment of 175° C. or more. When an Au skin layer is further formed on a surface of the Pd coating layer, wedge bondability improves.

公开(公告)号：US20170301647A1

公开(公告)日：2017-10-19

申请号：US15593176

申请日：2017-05-11

申请人： Skyworks Solutions, Inc.

发明人： Sandra Louise Petty-Weeks ,  Guohao Zhang ,  Hardik Bhupendra Modi

IPC分类号： H01L23/00 ,  H01L23/66 ,  H05K1/02 ,  H05K3/24

CPC分类号： H01L24/85 ,  H01L23/66 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2223/6611 ,  H01L2223/6655 ,  H01L2223/6677 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48159 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48644 ,  H01L2224/48844 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2924/00011 ,  H01L2924/00012 ,  H01L2924/01015 ,  H01L2924/01047 ,  H01L2924/10329 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/13051 ,  H01L2924/1421 ,  H01L2924/1423 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/3011 ,  H05K1/0243 ,  H05K3/244 ,  H05K2201/0341 ,  H01L2924/00014 ,  H01L2924/00

摘要： This disclosure relates to a radio frequency (RF) transmission line for high performance RF applications. The RF transmission line includes a conductive layer and finish plating on the conductive layer. The finish plating includes a gold layer, a palladium layer proximate the gold layer, and a nickel layer proximate the palladium layer. The nickel layer has a thickness that allows a radio frequency signal received at the gold layer to penetrate the nickel layer and propagate in the conductive layer.

公开(公告)号：US20170301598A1

公开(公告)日：2017-10-19

申请号：US15583826

申请日：2017-05-01

申请人： Micron Technology, Inc.

发明人： Seng Kim Dalson Ye ,  Chin Hui Chong ,  Choon Kuan Lee ,  Wang Lai Lee ,  Roslan Bin Said

IPC分类号： H01L23/31 ,  H01L23/00 ,  H01L21/56 ,  H01L25/00 ,  H01L25/10 ,  H01L25/11 ,  H01L23/498

CPC分类号： H01L23/3128 ,  H01L21/561 ,  H01L23/49833 ,  H01L24/16 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/97 ,  H01L25/00 ,  H01L25/105 ,  H01L25/117 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/05599 ,  H01L2224/06136 ,  H01L2224/16055 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/4824 ,  H01L2224/73204 ,  H01L2224/73215 ,  H01L2224/73253 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2224/92147 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2225/1023 ,  H01L2225/1041 ,  H01L2225/1058 ,  H01L2225/1088 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01052 ,  H01L2924/0106 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/14 ,  H01L2924/15184 ,  H01L2924/15311 ,  H01L2924/15331 ,  H01L2924/181 ,  H01L2924/1815 ,  H01L2924/19107 ,  H01L2924/30105 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： Microelectronic devices, stacked microelectronic devices, and methods for manufacturing microelectronic devices are described herein. In one embodiment, a set of stacked microelectronic devices includes (a) a first microelectronic die having a first side and a second side opposite the first side, (b) a first substrate attached to the first side of the first microelectronic die and electrically coupled to the first microelectronic die, (c) a second substrate attached to the second side of the first microelectronic die, (d) a plurality of electrical couplers attached to the second substrate, (e) a third substrate coupled to the electrical couplers, and (f) a second microelectronic die attached to the third substrate. The electrical couplers are positioned such that at least some of the electrical couplers are inboard the first microelectronic die.

公开(公告)号：US20170271285A1

公开(公告)日：2017-09-21

申请号：US15072655

申请日：2016-03-17

申请人： GLOBALFOUNDRIES INC.

发明人： Richard S. Graf ,  Kibby B. Horsford ,  Sudeep Mandal

IPC分类号： H01L23/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0332 ,  H01L2224/03464 ,  H01L2224/0362 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/0519 ,  H01L2224/0529 ,  H01L2224/05339 ,  H01L2224/05344 ,  H01L2224/05347 ,  H01L2224/05355 ,  H01L2224/0539 ,  H01L2224/05444 ,  H01L2224/05455 ,  H01L2224/05564 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/11334 ,  H01L2224/11849 ,  H01L2224/13111 ,  H01L2224/13113 ,  H01L2224/13116 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/1319 ,  H01L2224/94 ,  H01L2224/03 ,  H01L2224/11 ,  H01L2924/013 ,  H01L2924/00014 ,  H01L2924/01046 ,  H01L2924/01079 ,  H01L2924/01005 ,  H01L2924/01015

摘要： A conductive polymer-solder ball structure is provided. The conductive polymer-solder ball structure includes a wafer having at least one metal pad providing an electrical conductive path to a substrate layer, a conductive polymer pad located directly on the wafer over the at least one metal pad, an electrolessly plated layer located on a surface of the conductive polymer pad, and a solder ball located on a surface of the electrolessly plated layer.

公开(公告)号：US09761563B2

公开(公告)日：2017-09-12

申请号：US15189387

申请日：2016-06-22

申请人： Hyung-lae Eun

发明人： Hyung-lae Eun

IPC分类号： H01L25/065 ,  H01L21/768 ,  H01L23/31 ,  H01L23/00 ,  H01L25/00 ,  H01L23/498

CPC分类号： H01L25/0657 ,  H01L21/76898 ,  H01L23/3128 ,  H01L23/3142 ,  H01L23/49811 ,  H01L23/49816 ,  H01L23/49827 ,  H01L24/06 ,  H01L24/13 ,  H01L24/17 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L24/85 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/06155 ,  H01L2224/06156 ,  H01L2224/06165 ,  H01L2224/13025 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16237 ,  H01L2224/17181 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45139 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/81801 ,  H01L2224/85 ,  H01L2224/9202 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06527 ,  H01L2225/06541 ,  H01L2225/06551 ,  H01L2225/06555 ,  H01L2225/06562 ,  H01L2225/06586 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012 ,  H01L2924/00011

摘要： Provided is a multi-chip package in which a plurality of semiconductor chips having different sizes are stacked. A multi-chip package may include a substrate, and a plurality of semiconductor chips stacked on the substrate, each of the plurality of semiconductor chips having a different size. Each of the plurality of semiconductor chips including a pad group and a reference region associated with the pad group, each pad group having a plurality of pads, and the plurality of pads in each pad group located at same coordinates with respect to the associated reference region, and each of the plurality of semiconductor chips having their reference regions vertically aligned.

公开(公告)号：US20170250152A1

公开(公告)日：2017-08-31

申请号：US15436778

申请日：2017-02-18

申请人： Infineon Technologies AG

发明人： Thorsten SCHARF ,  Steffen Jordan ,  Wolfgang Schober ,  Thomas Ziegler

IPC分类号： H01L23/00 ,  H01L21/56 ,  H01L25/065 ,  H01L25/00 ,  H01L21/78 ,  H01L23/31

CPC分类号： H01L24/08 ,  H01L21/561 ,  H01L21/78 ,  H01L23/3128 ,  H01L23/3157 ,  H01L23/49827 ,  H01L23/5383 ,  H01L23/5386 ,  H01L24/03 ,  H01L24/06 ,  H01L24/17 ,  H01L24/43 ,  H01L24/45 ,  H01L24/83 ,  H01L25/0652 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05111 ,  H01L2224/05116 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05155 ,  H01L2224/18 ,  H01L2924/01015

摘要： A package comprising an electronic chip, a laminate-type encapsulant at least partially encapsulating the electronic chip, a wiring structure extending from the electronic chip up to a contact pad, and a completely galvanically formed solderable exterior electric contact electrically coupled with the electronic chip by being arranged on the contact pad.