Abstract:
A semiconductor device includes a via electrode penetrating a substrate and a back-side molding layer covering a back-side surface of the substrate. The back-side molding layer contacts a sidewall of a back-side end portion of the via electrode, which is a portion of the via electrode that protrudes from the back-side surface of the substrate.
Abstract:
A semiconductor device has a semiconductor wafer with a plurality of semiconductor die. A first conductive layer is formed over a surface of the wafer. A first insulating layer is formed over the surface of the wafer and first conductive layer. A second conductive layer has first and second segments formed over the first insulating layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A UBM layer is formed over the second insulating layer and the first segment of the second conductive layer. A first bump is formed over the UBM layer. The first bump is electrically connected to the second segment and electrically isolated from the first segment of the second conductive layer. A second bump is formed over the surface of the wafer and electrically connected to the first segment of the second conductive layer.
Abstract:
A semiconductor package includes a packaging substrate including a first bond finger and a second bond finger, a first semiconductor chip mounted on the packaging substrate, and including a first chip pad and a second chip pad, the first bond finger being electrically connected to the first chip pad by a first bonding wire, and the second bond finger being electrically connected to the second chip pad by a second bonding wire, and a first decoupling semiconductor capacitor mounted on the first semiconductor chip, and including a first capacitor pad, the first capacitor pad being electrically connected to the second chip pad.
Abstract:
A circuit board surface structure includes a circuit board having at least one surface provided with a plurality of electrically connecting pads, an insulating protective layer characterized by photosensitivity and solder resisting and formed on the circuit board, and a plurality of openings formed in the insulating protective layer to expose the electrical connecting pads on the circuit board and tapered upward; and a conductive element formed in the opening, so as to increase the contact area and reinforce bonding between the electrically connecting pads and the conductive element.
Abstract:
A semiconductor package substrate structure and a manufacturing method thereof are disclosed. The structure includes a substrate having a plurality of electrical connecting pads formed on at least one surface thereof; a plurality of electroplated conductive posts each covering a corresponding one of the electrical connecting pads and an insulating protective layer formed on the surface of the substrate and having a revealing portion for exposing the electroplated conductive posts therefrom. The invention allows the interval between the electroplated conductive posts to be minimized, the generation of concentrated stresses and the overflow of underfill to be avoided, as well as the reduction of the overall height of the fabricated package.
Abstract:
A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
Abstract:
A circuit board surface structure includes a circuit board having at least one surface provided with a plurality of electrically connecting pads, an insulating protective layer characterized by photosensitivity and solder resisting and formed on the circuit board, and a plurality of openings formed in the insulating protective layer to expose the electrical connecting pads on the circuit board and tapered upward; and a conductive element formed in the opening, so as to increase the contact area and reinforce bonding between the electrically connecting pads and the conductive element.
Abstract:
It is an object of the present invention to provide a BGA package substrate capable of forming a thin and light BGA package which causes no crack in solder balls during temperature cycling tests and which permits fine-pitch packaging. According to the present invention, a conductive pattern 3 is formed on a solder resist layer 2 made of polyimide and a cover film 4 is formed on the conductive pattern 3. The conductive pattern 3 includes a land 3a for connection to a mother board and a bonding pad 3b for connection to an IC. The solder resist layer 2 has an opening 5 to leave an overlap on the periphery of the land 3a, and an end of the opening 5 is tapered. A solder ball 6 is formed on the land 3a.
Abstract:
The present invention relates to a method of manufacturing a circuit module through the use of a wireless bonding technique. In this invention, in order to achieve component assembly without experiencing thermal and mechanical stresses, in the circuit module manufacturing method in which an external electrode of a component and a conductor of a substrate are connected with each other according to the wireless bonding technique, the substrate has a laser beam transmissible property, and after the component is placed on an assembly surface of the substrate, a laser beam is applied from a surface of the substrate opposite to the assembly surface thereof to a connecting spot. The laser beam passing through the substrate heats the connecting spot so that the connection between the external electrode of the component and the conductor of the substrate is made by phase transition or diffusion.
Abstract:
In one example, an electronic device, comprises a first component comprising a first component inner side and a first component backside, a first component inner terminal, a first component dielectric at the first component inner side, and a first component interconnect coupled with the first component inner terminal. The electronic device comprises a second component over the first component and comprising a second component inner side facing the first component inner side, and a second component backside, a second component inner terminal, a second component dielectric at the second component inner side, and a second component interconnect coupled with the second component inner terminal. The first component dielectric and the second component dielectric comprise an inorganic material, the first component dielectric is coupled with the second component dielectric, and the first component interconnect is coupled with the second component interconnect. Other examples and related methods are also disclosed herein.