公开(公告)号：US20150048519A1

公开(公告)日：2015-02-19

申请号：US14180327

申请日：2014-02-13

Applicant: SK HYNIX INC.

Inventor： Jin Woo PARK ,  Sang Gyu LEE

IPC: H01L23/522 ,  H01L23/00 ,  H01L21/768

CPC classification number: H01L24/97 ,  H01L21/7684 ,  H01L21/76897 ,  H01L21/76898 ,  H01L21/784 ,  H01L23/3107 ,  H01L23/3171 ,  H01L23/481 ,  H01L24/05 ,  H01L24/13 ,  H01L24/14 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/18 ,  H01L2224/0401 ,  H01L2224/05009 ,  H01L2224/05605 ,  H01L2224/05609 ,  H01L2224/05611 ,  H01L2224/05613 ,  H01L2224/05616 ,  H01L2224/05618 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13025 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2224/16148 ,  H01L2224/16235 ,  H01L2224/16238 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/81193 ,  H01L2224/92225 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06544 ,  H01L2225/06548 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/1431 ,  H01L2924/1436 ,  H01L2924/1437 ,  H01L2924/1438 ,  H01L2924/1441 ,  H01L2924/15311 ,  H01L2924/157 ,  H01L2924/181 ,  H01L2924/18161 ,  H01L2924/014 ,  H01L2224/11 ,  H01L2224/03 ,  H01L2924/00

Abstract: A semiconductor device includes a via electrode penetrating a substrate and a back-side molding layer covering a back-side surface of the substrate. The back-side molding layer contacts a sidewall of a back-side end portion of the via electrode, which is a portion of the via electrode that protrudes from the back-side surface of the substrate.

Abstract translation: 半导体器件包括穿透基板的通路电极和覆盖基板的背面的背面成型层。 背面成型层与作为从基板的背面突出的通孔电极的一部分的通路电极的背面侧端部的侧壁接触。