Invention Grant
- Patent Title: Semiconductor device including an insulating film and insulating pillars and manufacturing method of the semiconductor device
- Patent Title (中): 包括绝缘膜和绝缘柱的半导体器件和半导体器件的制造方法
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Application No.: US12081818Application Date: 2008-04-22
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Publication No.: US07675183B2Publication Date: 2010-03-09
- Inventor: Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
- Applicant: Hiroshi Toyoda , Mitsuhiro Nakao , Masahiko Hasunuma , Hisashi Kaneko , Atsuko Sakata , Toshiaki Komukai
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JPP2001-057367 20010301; JPP2001-260644 20010830; JPP2001-378778 20011212; JPP2001-401293 20011228
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52
Abstract:
A semiconductor device, which is comprised of a copper wiring layer which is formed above a semiconductor substrate, a pad electrode layer which conducts electrically to the copper wiring layer and has an alloy, which contains copper and a metal whose oxidation tendency is higher than copper, formed to extend to the bottom surface, and an insulating protective film which has an opening extended to the pad electrode layer, is provided.
Public/Granted literature
- US20080237863A1 Semiconductor device and manufacturing method of semiconductor device Public/Granted day:2008-10-02
Information query
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