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    Charged Particle Beam Device
    131.
    发明申请
    Charged Particle Beam Device 有权
    带电粒子束装置

    公开(公告)号：US20150136979A1

    公开(公告)日：2015-05-21

    申请号：US14407117

    申请日：2013-04-12

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Ichiro Tachibana ,  Naomasa Suzuki

    IPC: H01J37/21 ,  H01J37/26 ,  H01J37/147 ,  H01J37/10

    CPC classification number: H01J37/21 ,  H01J37/10 ,  H01J37/147 ,  H01J37/263 ,  H01J37/28 ,  H01J37/3178 ,  H01J2237/04756 ,  H01J2237/0492 ,  H01J2237/063 ,  H01J2237/10 ,  H01J2237/15 ,  H01J2237/21 ,  H01J2237/244 ,  H01J2237/2602 ,  H01J2237/281

    Abstract: When a signal electron is detected by energy selection by combining and controlling retarding and boosting for observation of a deep hole, etc., the only way for focus adjustment is to use a change in magnetic field of an objective lens. However, since responsiveness of the change in magnetic field is poor, throughput reduces. A charged particle beam device includes: an electron source configured to generate a primary electron beam; an objective lens configured to focus the primary electron beam; a deflector configured to deflect the primary electron beam; a detector configured to detect a secondary electron or a reflection electron generated from a sample by irradiation of the primary electron beam; an electrode having a hole through which the primary electron beam passes; a voltage control power supply configured to apply a negative voltage to the electrode; and a retarding voltage control power supply configured to generate an electric field, which decelerates the primary electron beam, on the sample by applying the negative voltage to the sample, wherein the charged particle beam device performs focus adjustment while an offset between the voltage applied to the electrode and the voltage applied to the sample is being kept constant.

    Abstract translation: 当通过组合并控制用于观察深孔等的延迟和升压来进行能量选择来检测信号电子时，聚焦调整的唯一方式是使用物镜的磁场变化。 然而，由于磁场变化的响应性差，吞吐量降低。 带电粒子束装置包括：电子源，被配置为产生一次电子束; 配置成聚焦一次电子束的物镜; 偏转器，被配置为偏转所述一次电子束; 检测器，被配置为通过一次电子束的照射来检测从样品产生的二次电子或反射电子; 具有一次电子束通过的孔的电极; 电压控制电源，被配置为向所述电极施加负电压; 以及延迟电压控制电源，被配置为通过向样本施加负电压来产生使样品上的一次电子束减速的电场，其中带电粒子束装置执行焦点调整，同时施加到 施加到样品的电极和电压保持恒定。

    Gas field ionization ion source and ion beam apparatus
    133.
    发明授权
    Gas field ionization ion source and ion beam apparatus 有权
    气田电离离子源和离子束装置

    公开(公告)号：US09018597B2

    公开(公告)日：2015-04-28

    申请号：US14390071

    申请日：2013-03-11

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yoshimi Kawanami ,  Hironori Moritani

    IPC: H01J27/26 ,  H01J37/08 ,  H01J37/10 ,  H01J37/147 ,  H01J37/26

    CPC classification number: H01J37/08 ,  H01J27/26 ,  H01J37/10 ,  H01J37/147 ,  H01J37/26 ,  H01J37/28 ,  H01J2237/006 ,  H01J2237/0807

    Abstract: In the case of a conventional gas field ionization ion source, it was not possible to carry out an analysis with a high S/N ratio and a high-speed machining process because the current amount of an ion beam is small. In view of these problems, the present invention has been devised, and its object is to obtain a large ion beam current, while suppressing a probability of damaging an emitter electrode. The present invention is characterized by a process in which an ion beam is emitted at least in two operation states including a first operation state in which, when a first extraction voltage is applied, with the gas pressure being set to a first gas pressure, ions are emitted from a first ion emission region at the apex of the emitter electrode, and a second operation state in which, when a second extraction voltage that is higher than the first extraction voltage is applied, with the gas pressure being set to a second gas pressure that is higher than the first gas pressure, ions are emitted from a second ion emission region that is larger than the first ion emission region.

    Abstract translation: 在常规气田电离离子源的情况下，由于离子束的电流量小，所以不可能以高S / N比和高速加工工艺进行分析。 鉴于这些问题，本发明的目的是为了获得大的离子束电流，同时抑制发射电极损坏的可能性。 本发明的特征在于，其中离子束至少在两种操作状态下发射的过程，包括第一操作状态，其中当施加第一提取电压时，将气体压力设置为第一气体压力，离子 从发射电极的顶点处的第一离子发射区域发射;以及第二操作状态，其中当施加高于第一提取电压的第二提取电压时，将气体压力设定为第二气体 高于第一气体压力的压力，从大于第一离子发射区域的第二离子发射区域发射离子。

    DEVICE FOR CORRECTING DIFFRACTION ABERRATION OF ELECTRON BEAM
    136.
    发明申请
    DEVICE FOR CORRECTING DIFFRACTION ABERRATION OF ELECTRON BEAM 有权
    用于校正电子束的衍射脱落的装置

    公开(公告)号：US20140124664A1

    公开(公告)日：2014-05-08

    申请号：US13977139

    申请日：2011-12-26

    Applicant: Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    Inventor： Muneyuki Fukuda ,  Yoichi Ose ,  Mitsugu Sato ,  Hiroyuki Ito ,  Hiroshi Suzuki ,  Naomasa Suzuki

    IPC: H01J37/10 ,  H01J37/26 ,  H01J37/147

    CPC classification number: H01J37/10 ,  H01J37/147 ,  H01J37/153 ,  H01J37/26 ,  H01J2237/1534 ,  H01J2237/2614

    Abstract: A diffraction aberration corrector formed by the multipole of the solenoid coil ring and having a function of adjusting the degree of orthogonality or axial shift of the vector potential with respect to the beam axis. In order to cause a phase difference, the diffraction aberration corrector that induces a vector potential, which is perpendicular to the beam axis and has a symmetrical distribution within the orthogonal plane with respect to the beam axis, is provided near the objective aperture and the objective lens. A diffracted wave traveling in a state of being inclined from the beam axis passes through the ring of the magnetic flux. Since the phase difference within the beam diameter is increased by the Aharonov-Bohm effect due to the vector potential, the intensity of the electron beam on the sample is suppressed.

    Abstract translation: 由电磁线圈环的多极形成的衍射像差校正器，具有调整矢量电势相对于光束轴线的正交性或轴向移动的功能的功能。 为了产生相位差，在物镜孔附近设置衍射像差校正器，该衍射像差校正器垂直于光束轴并且在相对于光束轴线的正交平面内具有对称分布的矢量电位， 镜片。 在从光束轴倾斜的状态下行进的衍射波通过磁通的环。 由于由于向量电位而使光束直径内的相位差增加了Aharonov-Bohm效应，所以抑制了样品上电子束的强度。

    ELECTRON BEAM APPARATUS AND LENS ARRAY
    137.
    发明申请
    ELECTRON BEAM APPARATUS AND LENS ARRAY 审中-公开
    电子束装置和镜头阵列

    公开(公告)号：US20130248731A1

    公开(公告)日：2013-09-26

    申请号：US13733955

    申请日：2013-01-04

    Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

    Inventor： Sayaka TANIMOTO ,  Hiroya OHTA ,  Makoto SAKAKIBARA ,  Momoyo ENYAMA ,  Kenji TANIMOTO

    IPC: H01J37/10

    CPC classification number: H01J37/10 ,  H01J37/153 ,  H01J2237/1205 ,  H01J2237/121 ,  H01J2237/1534

    Abstract: There is provided both an electron beam apparatus and a lens array, capable of correcting a curvature of field aberration under various optical conditions. The electron beam apparatus comprises the lens array having a plurality of electrodes, and multiple openings are formed in the respective electrodes. An opening diameter distribution with respect to the respective opening diameters of the plural openings formed in the respective electrodes are individually set, and voltages applied to the respective electrodes are independently controlled to thereby independently adjust an image forming position of a reference beam, and a curvature of the lens array image surface.

    Abstract translation: 提供能够在各种光学条件下校正场像差曲率的电子束装置和透镜阵列。 电子束装置包括具有多个电极的透镜阵列，并且在各个电极中形成多个开口。 分别设置相对于形成在各个电极中的多个开口的开口直径的开口直径分布，并且独立地控制施加到各个电极的电压，从而独立地调整参考光束的图像形成位置和曲率 的透镜阵列图像表面。

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