摘要:
A scanning microscope includes: a charged particle beam source configured to output a charged particle beam to be emitted to a sample; a detector configured to detect charged particles from the sample; and a controller configured to control the charged particle beam source and the detector, wherein the controller changes one or more variable parameters to determine a plurality of different parameter value sets, acquires a measurement result of a temporal change of absorption current in a target sample material under each of the plurality of different parameter value sets, and, based on the measurement results, selects a parameter value set for use in measurement of the target sample from the plurality of different parameter value sets.
摘要:
Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.
摘要:
An ion implantation system measurement system has a scan arm that rotates about an axis and a workpiece support to translate a workpiece through the ion beam. A first measurement component downstream of the scan arm provides a first signal from the ion beam. A second measurement component with a mask is coupled to the scan arm to provide a second signal from the ion beam with the rotation of the scan arm. The mask permits varying amounts of the ion radiation from the ion beam to enter a Faraday cup based on an angular orientation between the mask and the ion beam. A blocking plate selectively blocks the ion beam to the first faraday based on the rotation of the scan arm. A controller determines an angle and vertical size of the ion beam based on the first signal, second signal, and orientation between the mask and ion beam as the second measurement component rotates.
摘要:
A system and a method for evaluating a lithography mask, the system may include: (a) electron optics for directing primary electrons towards a pellicle that is positioned between the electron optics and the lithography mask; wherein the primary electrons exhibit an energy level that allows the primary electrons to pass through the pellicle and to impinge on the lithographic mask; (b) at least one detector for detecting detected emitted electrons and for generating detection signals; wherein detected emitted electrons are generated as a result of an impingement of the primary electrons on the lithographic mask; and (c) a processor for processing the detection signals to provide information about the lithography mask.
摘要:
Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.
摘要:
A method which visualizes the distribution of a local electric field formed near a sample 2 is disclosed. A primary electron beam 1 which passes through the local electric field formed near the sample 2 is deflected by the local electric field, secondary electrons which are generated and emitted from a detection element provided downstream of an orbit of the deflected primary electron beam 1 are detected by a secondary electron detector 6, and an image formed based on the detected signal and a scanning electron beam image obtained by scanning the sample 2 are synthesized thus visualizing the distribution of the local electric field in multiple tones. Due to such an operation, it is possible to provide a method for visualizing the distribution of a local electric field in which the distribution of a local electric field can be obtained in multiple tone and in real time by performing image scanning one time using a usual electron beam scanning optical system.
摘要:
The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices.To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.
摘要:
The present invention was made in view of a problem of an electron microscope in which a reduction in detection efficiency of electrons detected by a detector should be prevented by eliminating any influence of a leakage magnetic field through a gap in an objective lens onto the electrons emitted from a specimen. To solve the problem, the present invention provides an electron microscope having a configuration with: a pole piece electrode for accelerating primary electrons emitted at an electrons source; and an objective lens including the pole piece electrode. In the objective lens, an electrically and magnetically insulated gap is formed between the pole piece electrode and other pole piece, and an auxiliary coil is concentrically disposed with the objective lens at a middle position between the gap and a detection surface of the electron detector, with an electric current flowing through the auxiliary coil in the opposite direction from that of an electric current flowing through the objective lens coil.
摘要:
An electron beam apparatus having a longer life time of cathode, and allowing a plurality of electron beams to be arranged adequately around an optical axis and five or more electron beams to be formed from a single electron gun. The electron beams emitted from a cathode made of ZrO/W (tungsten zirconium oxide) or a cathode made of carbide of transition metal to the off-optical axis directions may be converged on a sample to scan it. The apparatus includes a plate for reducing a vacuum conductance defined between the electron gun chamber side and the sample side, and apertures are formed through the plate at locations offset from the optical axis allowing for the passage of the electron beams. In order to evaluate a pattern on the sample, the electron beam emitted from the electron gun is incident to the sample surface via an objective lens. The objective lens is composed of a flat electrode having an aperture centered on the optical axis and placed in parallel with the sample surface and an electromagnetic lens including a gap formed in a side facing to the sample. Further, in order to inspect a mask, spacing among a plurality of electron beams after having passed through the mask are extended by a magnifying lens and thus widely spaced electron beams are then converted into optical signal in a scintillator.
摘要:
The present invention has the object of providing a charged particle beam irradiation method ideal for reducing the focus offset, magnification fluctuation and measurement length error in charged particle beam devices. To achieve these objects, a method is disclosed in the invention for measuring the electrical potential distribution on the sample with a static electrometer while loaded by a loader mechanism. Another method is disclosed for measuring the local electrical charge at specified points on the sample, and isolating and measuring the wide area electrostatic charge quantity from those local electrostatic charges. Yet another method is disclosed for correcting the measurement length value or magnification based on fluctuations found by measuring the amount of electrostatic charge at the specified points under at least two charged particle optical conditions, and then using a charged particle beam to measure fluctuations in measurement dimensions occurring due to fluctuations in the electrostatic charge at the specified locations.