摘要:
A multi-charged particle beam writing apparatus according to one aspect of the present invention includes a region setting unit configured to set, as an irradiation region for a beam array to be used, the region of the central portion of an irradiation region for all of multiple beams of charged particle beams implemented to be emittable by a multiple beam irradiation mechanism, and a writing mechanism, including the multiple beam irradiation mechanism, configured to write a pattern on a target object with the beam array in the region of the central portion having been set in the multiple beams implemented.
摘要:
Disclosed herein are tools and methods for subtractively patterning metals. These tools and methods may permit the subtractive patterning of metal (e.g., copper, platinum, etc.) at pitches lower than those achievable by conventional etch tools and/or with aspect ratios greater than those achievable by conventional etch tools. The tools and methods disclosed herein may be cost-effective and appropriate for high-volume manufacturing, in contrast to conventional etch tools.
摘要:
Embodiments of the present invention disclose methods and systems for producing an adaptive pencil beam having an adjustable lateral beam size and Bragg-peak width. According to one disclosed embodiment, an apparatus for producing an adaptive pencil beam is disclosed. The apparatus includes a set of momentum band expanders configured to widen a momentum spread of a pencil beam, where a momentum band expander is selected from the set of momentum band expanders to receive the pencil beam, and a slit at dispersive focus of two dipole magnets to adjust a width of a Bragg-peak of the pencil beam. According to another disclosed embodiment, a method for producing an adaptive pencil beam with an adjustable lateral beam is disclosed. The method includes selecting a scatter foil, or setting of a defocusing/focusing magnet, and adjusting a lateral size of the pencil beam.
摘要:
A scanning electron microscope (SEM) with a swing objective lens (SOL) reduces the off-aberrations to enhance the image resolution, and extends the e-beam scanning angle. The scanning electron microscope comprises a charged particle source, an accelerating electrode, and a swing objective lens system including a pre-deflection unit, a swing deflection unit and an objective lens, all of them are rotationally symmetric with respect to an optical axis. The upper inner-face of the swing deflection unit is tilted an angle θ to the outer of the SEM and its lower inner-face is parallel to the optical axis. A distribution for a first and second focusing field of the swing objective lens is provided to limit the off-aberrations and can be performed by a single swing deflection unit. Preferably, the two focusing fields are overlapped by each other at least 80 percent.
摘要:
Disclosed is a charged particle beam apparatus wherein charged particles emitted from a sample are efficiently acquired at a position as close as possible to the sample, said position being in the objective lens. This charged particle beam apparatus is provided with: a charged particle beam receiving surface that is provided with a scintillator that emits light by means of charged particles; a photodetector that detects light emitted from the scintillator; a mirror that guides, to the photodetector, the light emitted from the scintillator; and an objective lens for focusing the charged particle beam to a sample. A distance (Lsm) between the charged particle beam receiving surface and the mirror is longer than a distance (Lpm) between the photodetector and the mirror, and the charged particle beam receiving surface, the mirror, and the photodetector are stored in the objective lens.
摘要:
A scanning electron microscope (SEM) with a swing objective lens (SOL) reduces the off-aberrations to enhance the image resolution, and extends the e-beam scanning angle. The scanning electron microscope comprises a charged particle source, an accelerating electrode, and a swing objective lens system including a pre-deflection unit, a swing deflection unit and an objective lens, all of them are rotationally symmetric with respect to an optical axis. The upper inner-face of the swing deflection unit is tilted an angle θ to the outer of the SEM and its lower inner-face is parallel to the optical axis. A distribution for a first and second focusing field of the swing objective lens is provided to limit the off-aberrations and can be performed by a single swing deflection unit. Preferably, the two focusing fields are overlapped by each other at least 80 percent.
摘要:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
摘要:
A Correlative Light and Electron Microscope (CLEM) is equipped with a TEM column and a light microscope fitted between the pole shoes of the objective lens of the TEM. To enlarge the acceptance solid angle for enhanced sensitivity a truncated lens is used. It is noted that this does not imply that the lens shows astigmatism (it is not a cylindrical lens).Using the light microscope, a first image is made with the sample in a first direction. This image will show in one direction a higher (diffraction limited) resolution than in the direction perpendicular thereto, due to the different NA of the lens in the two directions. By rotating the sample and making a second image, a combined image can be formed showing a better resolution than either of the images in the direction where they show a low NA.
摘要:
A particle-optical arrangement comprises a charged-particle source for generating a beam of charged particles; a multi-aperture plate arranged in a beam path of the beam of charged particles, wherein the multi-aperture plate has a plurality of apertures formed therein in a predetermined first array pattern, wherein a plurality of charged-particle beamlets is formed from the beam of charged particles downstream of the multi-aperture plate, and wherein a plurality of beam spots is formed in an image plane of the apparatus by the plurality of beamlets, the plurality of beam spots being arranged in a second array pattern; and a particle-optical element for manipulating the beam of charged particles and/or the plurality of beamlets; wherein the first array pattern has a first pattern regularity in a first direction, and the second array pattern has a second pattern regularity in a second direction electron-optically corresponding to the first direction, and wherein the second regularity is higher than the first regularity.
摘要:
Foreign substances present in a sample chamber are attached to or drawn close to an objective lens and an electrode disposed close to the objective lens by applying a higher magnetic field than when normally used to the objective lens and applying a higher electric field than when normally used to the electrode disposed close to the objective lens. A stage is moved such that the center of an optical axis is located directly above a dedicated stand capable of applying voltage, the magnetic field of the objective lens is turned off, and then the potential difference between the electrode disposed close to the objective lens and an electrode disposed close to the sage is periodically maximized and minimized to thereby forcibly drop the foreign substances onto the dedicated stand capable of applying voltage.