公开(公告)号：US20230242401A1

公开(公告)日：2023-08-03

申请号：US17766257

申请日：2020-10-02

申请人： TOSOH CORPORATION

发明人： Masami MESUDA ,  Hideto KURAMOCHI ,  Shinichi HARA

IPC分类号： C01B21/06 ,  C23C16/448 ,  C04B35/622 ,  C04B35/58 ,  C23C14/34

CPC分类号： C01B21/0632 ,  C23C16/4486 ,  C04B35/622 ,  C04B35/58 ,  C23C14/3414 ,  C01P2004/61 ,  C04B2235/725 ,  C04B2235/3286 ,  C04B2235/723 ,  C01P2004/20 ,  C01P2006/80

摘要： High-purity gallium nitride particles having a low oxygen content suitable for a raw material or a sintered body is provided. Gallium nitride particles characterized in that the oxygen content is 0.5 at % or less and the total impurity amount of elements, Si, Ge, Sn, Pb, Be, Mg, Ca, Sr, Ba, Zn and Cd, is less than 10 wtppm are used.

公开(公告)号：US20180065894A9

公开(公告)日：2018-03-08

申请号：US15126644

申请日：2015-03-18

申请人： Element Six (UK) Limited

发明人： Nedret CAN ,  Melisha NAIDOO ,  Carlo VISINTAINER

IPC分类号： C04B35/52 ,  C04B35/626 ,  C04B35/645 ,  B01J3/06 ,  C22C26/00 ,  B24D18/00

CPC分类号： C04B35/52 ,  B01J3/062 ,  B01J2203/062 ,  B01J2203/0655 ,  B01J2203/0685 ,  B22F2005/001 ,  B22F2207/03 ,  B24D18/0009 ,  C04B35/6268 ,  C04B35/645 ,  C04B37/001 ,  C04B2235/425 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/5472 ,  C04B2235/5481 ,  C04B2235/616 ,  C04B2235/656 ,  C04B2235/6562 ,  C04B2235/6581 ,  C04B2235/723 ,  C04B2235/786 ,  C04B2237/363 ,  C04B2237/64 ,  C22C26/00 ,  C22C2204/00

摘要： A polycrystalline super hard construction comprises a body of polycrystalline diamond (PCD) material and a plurality of interstitial regions between inter-bonded diamond grains forming the polycrystalline diamond material. The body of PCD material comprises a working surface positioned along an outside portion of the body, and a first region adjacent the working surface, the first region being a thermally stable region. The first region and/or a further region and/or the body of PCD material has/have an average oxygen content of less than around 300 ppm. A method of forming such a construction is also disclosed.

公开(公告)号：US09862045B2

公开(公告)日：2018-01-09

申请号：US14388953

申请日：2013-03-27

申请人： MITSUBISHI MATERIALS CORPORATION

发明人： Toshiyuki Nagase ,  Takeshi Kitahara ,  Ryo Muranaka

IPC分类号： B23K1/00 ,  B23K1/19 ,  B32B15/04 ,  H01L23/373 ,  C04B37/02 ,  B32B18/00 ,  H01L23/473 ,  H05K3/38 ,  H05K1/03

CPC分类号： B23K1/0016 ,  B23K1/19 ,  B32B15/04 ,  B32B18/00 ,  B32B2457/00 ,  C04B37/026 ,  C04B2235/6581 ,  C04B2235/723 ,  C04B2235/963 ,  C04B2237/121 ,  C04B2237/126 ,  C04B2237/128 ,  C04B2237/366 ,  C04B2237/402 ,  C04B2237/52 ,  C04B2237/60 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  H01L23/3735 ,  H01L23/3736 ,  H01L23/473 ,  H01L2224/48091 ,  H01L2224/73265 ,  H05K1/0306 ,  H05K3/382 ,  H05K3/383 ,  H01L2924/00014

摘要： To provide a power-module substrate and a manufacturing method thereof in which small voids are reduced at a bonded part and separation can be prevented. Bonding a metal plate of aluminum or aluminum alloy to at least one surface of a ceramic substrate by brazing, when a cross section of the metal plate is observed by a scanning electron microscope in a field of 3000 magnifications in a depth extent of 5 μm from a bonded interface between the metal plate and the ceramic substrate in a width area of 200 μm from a side edge of the metal plate, residual-continuous oxide existing continuously by 2 μm or more along the bonded interface has total length of 70% or less with respect to a length of the field.

公开(公告)号：US20170216931A1

公开(公告)日：2017-08-03

申请号：US15514963

申请日：2015-09-29

申请人： NGK SPARK PLUG CO., LTD.

发明人： Ryoji TOYODA ,  Fumihiro KIKKAWA ,  Atsushi KOMURA

IPC分类号： B23B27/14 ,  C04B35/111 ,  C04B35/18 ,  C04B35/505

CPC分类号： B23B27/148 ,  B23B27/14 ,  B23B2200/0461 ,  B23C5/16 ,  C04B35/1115 ,  C04B35/18 ,  C04B35/505 ,  C04B35/597 ,  C04B35/6261 ,  C04B35/638 ,  C04B35/6455 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3227 ,  C04B2235/3229 ,  C04B2235/3865 ,  C04B2235/3869 ,  C04B2235/3878 ,  C04B2235/44 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/658 ,  C04B2235/723 ,  C04B2235/767 ,  C04B2235/77 ,  C04B2235/80 ,  C04B2235/96 ,  C04B2235/9607

摘要： A sialon sintered body and a cutting insert each having thermal shock resistance and VB wear resistance. The sialon sintered body and the cutting insert contain β-sialon and 21R-sialon and exhibit an X-ray diffraction peak intensity ratio R[(I21R/IA)×100] of 5% or greater and smaller than 30%, wherein IA represents the sum of the peak intensities of the sialon species, and I21R represents the peak intensity of 21R-sialon, the ratio being calculated from the peak intensities of the sialon species obtained by using X-ray diffractometry.

公开(公告)号：US20170152143A1

公开(公告)日：2017-06-01

申请号：US15430920

申请日：2017-02-13

申请人： KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

发明人： Noritaka NAKAYAMA ,  Katsuyuki AOKI ,  Takashi SANO

IPC分类号： C01B21/068 ,  C04B35/626 ,  H01L23/373 ,  C04B35/632 ,  C04B35/64 ,  H01L23/498 ,  C04B35/587 ,  C04B35/63

CPC分类号： C01B21/068 ,  B32B18/00 ,  C01P2006/32 ,  C04B35/584 ,  C04B35/587 ,  C04B35/593 ,  C04B35/6263 ,  C04B35/6264 ,  C04B35/63 ,  C04B35/632 ,  C04B35/6342 ,  C04B35/63424 ,  C04B35/638 ,  C04B35/64 ,  C04B2235/3206 ,  C04B2235/3224 ,  C04B2235/3225 ,  C04B2235/3232 ,  C04B2235/3244 ,  C04B2235/383 ,  C04B2235/3873 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6025 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/6584 ,  C04B2235/661 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/85 ,  C04B2235/95 ,  C04B2235/96 ,  C04B2235/9607 ,  C04B2237/368 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3735 ,  H01L23/49838 ,  H01L23/49877 ,  H01L23/49894 ,  H01L2924/0002 ,  H05K1/0201 ,  H05K1/0306 ,  H01L2924/00

摘要： A silicon nitride substrate including silicon nitride crystal grains and a grain boundary phase and having a thermal conductivity of 50 W/m·K or more, wherein, in a sectional structure of the silicon nitride substrate, a ratio (T2/T1) of a total length T2 of the grain boundary phase in a thickness direction with respect to a thickness T1 of the silicon nitride substrate is 0.01 to 0.30, and a variation from a dielectric strength mean value when measured by a four-terminal method in which electrodes are brought into contact with a front and a rear surfaces of the substrate is 20% or less. The dielectric strength mean value of the silicon nitride substrate can be 15 kV/rum or more. According to above structure, there can be obtained a silicon nitride substrate and a silicon nitride circuit board using the substrate in which variation in the dielectric strength is decreased.

公开(公告)号：US09321691B2

公开(公告)日：2016-04-26

申请号：US14408181

申请日：2013-05-17

申请人： SAINT-GOBAIN CENTRE DE RECHERCHES ET D'ETUDES EUROPEEN ,  CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

发明人： Gilles Rossiquet ,  Eric Jorge

IPC分类号： C04B35/565 ,  F41H5/04 ,  C04B35/573 ,  C04B35/626

CPC分类号： C04B35/565 ,  C04B35/573 ,  C04B35/6261 ,  C04B35/6263 ,  C04B35/62655 ,  C04B2235/3222 ,  C04B2235/3813 ,  C04B2235/3821 ,  C04B2235/3826 ,  C04B2235/3839 ,  C04B2235/3843 ,  C04B2235/422 ,  C04B2235/48 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/6562 ,  C04B2235/6565 ,  C04B2235/6567 ,  C04B2235/666 ,  C04B2235/72 ,  C04B2235/723 ,  C04B2235/76 ,  C04B2235/77 ,  C04B2235/78 ,  C04B2235/786 ,  C04B2235/788 ,  C04B2235/85 ,  C04B2235/96 ,  F41H5/0414 ,  F41H5/0421

摘要： A product obtained by solid-phase sintering of a silicon carbide powder and of a sintering additive, the product having a relative density of greater than 98.5% and including: more than 92% by weight of SiC present in the form of grains, less than 2% by weight of elemental oxygen, less than 6% by weight, in total, of other elements, wherein more than 10% by number of the SiC grains, on the basis of the total number of the grains, have an elongation factor F of greater than 3 (F>3), wherein more than 50% by number of the grains, the elongation factor F of which is greater than 3, have a width of greater than 3 micrometers, and wherein the other SiC grains in the product have a mean equivalent diameter of greater than 1 micrometer and less than 20 micrometers.

摘要翻译： 通过碳化硅粉末和烧结添加剂的固相烧结获得的产品，所述产品的相对密度大于98.5％，并且包括：超过92重量％的以颗粒形式存在的SiC，小于 2重量％的元素氧，总计少于6重量％的其它元素，其中基于总颗粒数量超过10重量％的SiC颗粒具有伸长系数F 大于3（F> 3），其中延伸率F大于3的多于50％的晶粒具有大于3微米的宽度，并且其中产物中的其它SiC晶粒 平均当量直径大于1微米且小于20微米。

公开(公告)号：US09293384B2

公开(公告)日：2016-03-22

申请号：US13522218

申请日：2011-01-13

申请人： Yuusaku Ishimine ,  Masayuki Moriyama ,  Kenji Komatsubara

发明人： Yuusaku Ishimine ,  Masayuki Moriyama ,  Kenji Komatsubara

IPC分类号： H01L23/15 ,  H05K7/20 ,  H05K1/00 ,  B32B33/00 ,  H01L23/13 ,  H01L35/32 ,  C04B35/587 ,  C04B37/02 ,  H05K1/03 ,  H05K3/38

CPC分类号： H01L23/13 ,  C04B35/587 ,  C04B37/026 ,  C04B2235/3206 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3878 ,  C04B2235/3882 ,  C04B2235/5276 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/6582 ,  C04B2235/6587 ,  C04B2235/721 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/945 ,  C04B2235/9607 ,  C04B2237/125 ,  C04B2237/368 ,  C04B2237/407 ,  C04B2237/74 ,  H01L23/15 ,  H01L23/3731 ,  H01L23/3735 ,  H01L35/32 ,  H01L2924/0002 ,  H05K1/0306 ,  H05K3/38 ,  H05K2201/0248 ,  H05K2201/0266 ,  H05K2201/0269 ,  Y10T428/24413 ,  Y10T428/24421 ,  Y10T428/25 ,  Y10T428/259 ,  H01L2924/00

摘要： A silicon nitride substrate comprises a substrate comprising a silicon nitride sintered body, and a plurality of granular bodies containing silicon and integrated to a principal surface of the substrate, wherein a plurality of needle crystals or column crystals comprising mainly silicon nitride are extended from a portion of the granular bodies. A brazing material is applied to a principal surface of the substrate, and a circuit member and a heat radiation member are arranged on the applied brazing material, and bonded by heating. Because of a plurality of granular bodies integrated to the principal surface of the substrate, and a plurality of the needle crystals or the column crystals extended from a portion of the granular bodies, a high anchor effect is produced so that the circuit member and the heat radiation member are firmly bonded to the silicon nitride substrate.

摘要翻译： 氮化硅衬底包括含有氮化硅烧结体的衬底和多个含有硅的颗粒体并且与衬底的主表面集成在一起，其中主要包含氮化硅的多个针状晶体或柱状晶体从一部分 的颗粒体。 将钎焊材料施加到基板的主表面，并且将电路构件和散热构件布置在所施加的钎焊材料上，并通过加热粘合。 由于集成到基板的主面的多个粒状体以及从一部分粒状体延伸的多个针状晶体或柱状晶体，产生高的锚定效应，使得电路部件和热量 辐射构件牢固地结合到氮化硅衬底上。

公开(公告)号：US20150315464A1

公开(公告)日：2015-11-05

申请号：US14618207

申请日：2015-02-10

申请人： Intematix Corporation

发明人： Shengfeng Liu ,  Dejie Tao ,  Xianglong Yuan ,  Yi-Qun Li

IPC分类号： C09K11/77 ,  F21V9/16

CPC分类号： C09K11/7734 ,  C04B35/58 ,  C04B35/581 ,  C04B35/584 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3213 ,  C04B2235/3215 ,  C04B2235/3217 ,  C04B2235/3224 ,  C04B2235/3286 ,  C04B2235/3409 ,  C04B2235/3852 ,  C04B2235/3865 ,  C04B2235/3873 ,  C04B2235/3895 ,  C04B2235/444 ,  C04B2235/445 ,  C04B2235/723 ,  C09K11/0883 ,  F21V9/30 ,  F21Y2115/10 ,  H05B33/12 ,  Y02B20/181

摘要： Embodiments of the present invention are directed to nitride-based, red-emitting phosphors in red, green, and blue (RGB) lighting systems, which in turn may be used in backlighting displays and warm white-light applications. In particular embodiments, the red-emitting phosphor is based on CaAlSiN3 type compounds activated with divalent europium. In one embodiment, the nitride-based, red emitting compound contains a solid solution of calcium and strontium compounds (Ca,Sr)AlSiN3:Eu2+, wherein the impurity oxygen content is less than about 2 percent by weight. In another embodiment, the (Ca,Sr)AlSiN3:Eu2+ compounds further contains a halogen in an amount ranging from about zero to about 2 atomic percent, where the halogen may be fluorine (F), chlorine (Cl), or any combination thereof. In one embodiment at least half of the halogen is distributed on 2-fold coordinated nitrogen (N2) sites relative to 3-fold coordinated nitrogen (N3) sites.

摘要翻译： 本发明的实施例涉及红色，绿色和蓝色（RGB）照明系统中的基于氮化物的红色发光荧光体，其又可用于背光显示器和暖白光应用。 在具体实施方案中，红色发光荧光体基于用二价铕活化的CaAlSiN 3型化合物。 在一个实施方案中，基于氮化物的红色发射化合物含有钙和锶化合物（Ca，Sr）AlSiN 3：Eu 2+的固溶体，其中杂质氧含量小于约2重量％。 在另一个实施方案中，（Ca，Sr）AlSiN 3：Eu 2+化合物还含有量为约0至约2原子％的卤素，其中卤素可以是氟（F），氯（Cl）或其任何组合 。 在一个实施方案中，至少一半的卤素相对于3倍配位的氮（N 3）位点分布在2倍配位的氮（N 2）位点上。

公开(公告)号：US09162929B2

公开(公告)日：2015-10-20

申请号：US12629641

申请日：2009-12-02

申请人： Lionel Vargas-Gonzalez ,  Robert Speyer

发明人： Lionel Vargas-Gonzalez ,  Robert Speyer

IPC分类号： C04B35/575 ,  C04B35/626 ,  C04B35/628 ,  C04B35/634 ,  C04B35/64

CPC分类号： C04B35/5755 ,  C04B35/62655 ,  C04B35/62695 ,  C04B35/62807 ,  C04B35/63476 ,  C04B35/64 ,  C04B2235/3418 ,  C04B2235/3821 ,  C04B2235/383 ,  C04B2235/422 ,  C04B2235/425 ,  C04B2235/48 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/6583 ,  C04B2235/661 ,  C04B2235/723 ,  C04B2235/77 ,  C04B2235/785 ,  C04B2235/786 ,  C04B2235/80 ,  C04B2235/96

摘要： Disclosed is a method for the synthesis of silicon carbide (SiC) bodies having a relative density of 99% or higher and a SiC body synthesized according to the method.

摘要翻译： 公开了一种用于合成相对密度为99％以上的碳化硅（SiC）体和根据该方法合成的SiC体的方法。

公开(公告)号：US09132619B2

公开(公告)日：2015-09-15

申请号：US13856919

申请日：2013-04-04

申请人： General Atomics

发明人： Hesham Ezzat Khalifa ,  Christian Peter Deck ,  Christina Allyssa Back

IPC分类号： B32B37/16 ,  C04B35/571 ,  C04B35/626 ,  C04B35/628 ,  C04B37/00 ,  B32B37/24 ,  B32B37/06 ,  B32B37/12 ,  B32B18/00 ,  C04B35/565

CPC分类号： B32B37/16 ,  B32B18/00 ,  B32B37/06 ,  B32B37/12 ,  B32B37/24 ,  C04B35/565 ,  C04B35/571 ,  C04B35/6267 ,  C04B35/6269 ,  C04B35/62802 ,  C04B35/62839 ,  C04B37/005 ,  C04B2235/3834 ,  C04B2235/483 ,  C04B2235/5276 ,  C04B2235/5296 ,  C04B2235/72 ,  C04B2235/723 ,  C04B2235/762 ,  C04B2235/96 ,  C04B2237/06 ,  C04B2237/062 ,  C04B2237/064 ,  C04B2237/066 ,  C04B2237/068 ,  C04B2237/08 ,  C04B2237/083 ,  C04B2237/34 ,  C04B2237/341 ,  C04B2237/343 ,  C04B2237/345 ,  C04B2237/346 ,  C04B2237/348 ,  C04B2237/365 ,  C04B2237/368 ,  C04B2237/708 ,  C04B2237/88 ,  Y10T403/477

摘要： Embodiments of the present invention provide high durability joints between ceramic articles, particularly between beta-silicon carbide (β-SiC) articles, and methods of making and using the same. In one embodiment, a joint between first and second articles each comprising a ceramic polymorph comprises a matrix comprising the ceramic polymorph and extending between the first and second articles; a plurality of inclusions comprising the ceramic polymorph and being distributed throughout the matrix; and a sealing layer comprising the ceramic polymorph and being respectively disposed on the first and second articles and the matrix.

摘要翻译： 本发明的实施例提供了陶瓷制品之间的高耐久性接头，特别是在β-碳化硅（＆amp; -SiC）制品之间，以及制造和使用它们的方法。 在一个实施方案中，每个包含陶瓷多晶型物的第一和第二制品之间的接头包括包含陶瓷多晶型物并在第一和第二制品之间延伸的基体; 多个夹杂物，其包含陶瓷多晶型物并分布在整个基质中; 以及包含陶瓷多晶型物并分别设置在第一和第二制品和基体上的密封层。