公开(公告)号：US12087717B2

公开(公告)日：2024-09-10

申请号：US17369292

申请日：2021-07-07

申请人： Infineon Technologies Austria AG

发明人： Thomas Feil ,  Danny Clavette ,  Paul Ganitzer ,  Martin Poelzl ,  Carsten von Koblinski

IPC分类号： H01L21/48 ,  H01L21/56 ,  H01L21/683 ,  H01L21/78 ,  H01L23/00 ,  H01L23/29 ,  H01L23/31 ,  H01L23/538 ,  H01L25/07 ,  H01L25/16 ,  H01L27/088

CPC分类号： H01L24/08 ,  H01L21/4857 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/78 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3178 ,  H01L23/3185 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/5389 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/24 ,  H01L24/25 ,  H01L24/73 ,  H01L24/82 ,  H01L24/96 ,  H01L25/072 ,  H01L25/16 ,  H01L27/088 ,  H01L23/3107 ,  H01L24/48 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/0231 ,  H01L2224/0233 ,  H01L2224/02381 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05647 ,  H01L2224/0603 ,  H01L2224/06182 ,  H01L2224/08137 ,  H01L2224/24105 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/2518 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2224/73227 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2224/245 ,  H01L2924/01029 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/13055 ,  H01L2924/00

摘要： In an embodiment, a semiconductor package includes a first transistor device having first and second opposing surfaces, a first power electrode and a control electrode arranged on the first surface and a second power electrode arranged on the second surface. A first metallization structure arranged on the first surface includes a plurality of outer contact pads which includes a protective layer of solder, Ag or Sn. A second metallization structure is arranged on the second surface. A conductive connection extending from the first surface to the second surface electrically connects the second power electrode to an outer contact pad of the first metallization structure. A first epoxy layer arranged on side faces and on the first surface of the transistor device includes openings which define a lateral size of the plurality of outer contact pads and a package footprint.

公开(公告)号：US11974479B2

公开(公告)日：2024-04-30

申请号：US17119864

申请日：2020-12-11

申请人： InnoLux Corporation

发明人： Shun-Yuan Hu ,  Chin-Lung Ting ,  Li-Wei Mao ,  Ming-Chun Tseng ,  Kung-Chen Kuo ,  Yi-Hua Hsu ,  Ker-Yih Kao

IPC分类号： H01L23/498 ,  G09F9/302 ,  G09G3/00 ,  H01L23/00 ,  H01L25/16 ,  H01L27/12 ,  H10K50/86 ,  H10K59/131 ,  H10K59/18 ,  H10K77/10 ,  H01L21/66

CPC分类号： H10K59/18 ,  G09F9/3026 ,  G09G3/006 ,  H01L24/24 ,  H01L24/32 ,  H01L24/73 ,  H01L24/92 ,  H01L25/162 ,  H01L25/167 ,  H01L27/124 ,  H10K50/865 ,  H10K59/131 ,  H10K77/111 ,  H01L22/14 ,  H01L2224/24226 ,  H01L2224/245 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/92244

摘要： An electrical connection structure is provided. The electrical connection structure includes a through hole, a first pad, a second pad and a conductive bridge. The through hole has a first end and a second end. The first pad at least partially surrounds the first end of the through hole and is electrically connected to a first circuit. The second pad is located at the second end of the through hole and is electrically connected to a second circuit. The conductive bridge is connected to the first pad and second pad through the through hole, thereby making the first and second circuits electrically connected to each other.

公开(公告)号：US11894395B2

公开(公告)日：2024-02-06

申请号：US17539740

申请日：2021-12-01

申请人： Samsung Display Co., LTD.

发明人： Yeon Kyung Kim

IPC分类号： H01L27/12 ,  H01L25/16 ,  H01L23/00

CPC分类号： H01L27/1244 ,  H01L25/167 ,  H01L24/24 ,  H01L2224/245 ,  H01L2224/24147

摘要： A display device includes a substrate including a display area and a non-display area driving circuits disposed in the non-display area; first voltage wirings and second voltage wirings extending from the display area to the non-display area; and a first auxiliary wiring electrically connected to the first voltage wirings and a second auxiliary wiring electrically connected to the second voltage wirings, the first auxiliary wiring and the second auxiliary wiring being electrically connected to the driving circuit, wherein the first voltage wirings electrically connected to an odd-numbered driving circuit among the driving circuits are electrically connected to the first auxiliary wiring through a first connection wiring, and the second voltage wirings electrically connected to an even-numbered driving circuit among the driving circuits are electrically connected to the second auxiliary wiring through a second connection wiring.

公开(公告)号：US09633973B2

公开(公告)日：2017-04-25

申请号：US14613357

申请日：2015-02-03

申请人： Kilsoo Kim ,  SunWon Kang

发明人： Kilsoo Kim ,  SunWon Kang

IPC分类号： H01L23/48 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L25/0652 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/06 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0657 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/02373 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/0557 ,  H01L2224/06135 ,  H01L2224/06136 ,  H01L2224/06181 ,  H01L2224/06182 ,  H01L2224/14181 ,  H01L2224/16145 ,  H01L2224/17517 ,  H01L2224/24011 ,  H01L2224/24051 ,  H01L2224/24145 ,  H01L2224/245 ,  H01L2224/2919 ,  H01L2224/29191 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/4813 ,  H01L2224/48145 ,  H01L2224/4824 ,  H01L2224/73207 ,  H01L2224/73209 ,  H01L2224/73265 ,  H01L2224/73267 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06524 ,  H01L2225/06541 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/15192 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/01029 ,  H01L2224/05552 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor package is provided comprising a package substrate having an opening located in a central region thereof and a circuit pattern provided adjacent to the opening. A first semiconductor chip is located on the package substrate and includes first bonding pads. A pair of second semiconductor chips are spaced apart from each other across the opening and mounted between the package substrate and the first semiconductor chip. Each of the second semiconductor chips includes a second bonding pad. A connection element is further provided to electrically connect the second bonding pad to a corresponding one of the first bonding pads.

公开(公告)号：US20170110339A1

公开(公告)日：2017-04-20

申请号：US14883638

申请日：2015-10-15

申请人： FREESCALE SEMICONDUCTOR, INC.

发明人： KAI YUN YOW ,  Poh Leng Eu

IPC分类号： H01L21/48 ,  H01L23/498

CPC分类号： H01L21/486 ,  H01L21/4853 ,  H01L23/3121 ,  H01L23/49811 ,  H01L23/49827 ,  H01L23/49866 ,  H01L24/24 ,  H01L24/32 ,  H01L24/73 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L2224/2405 ,  H01L2224/241 ,  H01L2224/24227 ,  H01L2224/244 ,  H01L2224/245 ,  H01L2224/29036 ,  H01L2224/2919 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73217 ,  H01L2224/73265 ,  H01L2224/82104 ,  H01L2224/82385 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2224/92144 ,  H01L2924/1433 ,  H01L2924/15313 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/014 ,  H01L2924/01028 ,  H01L2924/01079 ,  H01L2924/01029 ,  H01L2924/01046

摘要： A patterned, non-conductive substrate for an integrated circuit (IC) package has a die side configured to receive a die and a lead side opposite the die side. A pattern formed in the substrate defines openings (e.g., holes, steps, grooves, and/or cavities) that extend between the die side and the lead side of the substrate. In the IC package, the openings are filled with conductive material (e.g., solder) that supports electrical connections between bond pads on the die and leads formed from the conductive material. The substrate can be used to form a relatively inexpensive, quad flat no-lead (QFN) IC package without using a metal lead frame and without bond wires.

公开(公告)号：US20170084577A1

公开(公告)日：2017-03-23

申请号：US15364715

申请日：2016-11-30

申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

发明人： Francis J. CARNEY ,  Michael J. SEDDON

IPC分类号： H01L25/065 ,  H01L21/768 ,  H01L21/48 ,  H01L25/00

CPC分类号： H01L25/0652 ,  H01L21/486 ,  H01L21/76877 ,  H01L23/13 ,  H01L23/49805 ,  H01L24/05 ,  H01L24/08 ,  H01L24/16 ,  H01L24/24 ,  H01L24/25 ,  H01L24/73 ,  H01L24/80 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/92 ,  H01L25/0655 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L29/0657 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/03464 ,  H01L2224/0401 ,  H01L2224/05552 ,  H01L2224/05557 ,  H01L2224/0557 ,  H01L2224/05571 ,  H01L2224/05572 ,  H01L2224/05573 ,  H01L2224/0558 ,  H01L2224/05611 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/06181 ,  H01L2224/06183 ,  H01L2224/08137 ,  H01L2224/11002 ,  H01L2224/14181 ,  H01L2224/14183 ,  H01L2224/16137 ,  H01L2224/16147 ,  H01L2224/24051 ,  H01L2224/24101 ,  H01L2224/24137 ,  H01L2224/244 ,  H01L2224/245 ,  H01L2224/25175 ,  H01L2224/29019 ,  H01L2224/29021 ,  H01L2224/291 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29116 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/2929 ,  H01L2224/293 ,  H01L2224/30151 ,  H01L2224/32137 ,  H01L2224/73251 ,  H01L2224/73267 ,  H01L2224/80897 ,  H01L2224/809 ,  H01L2224/81005 ,  H01L2224/81815 ,  H01L2224/81897 ,  H01L2224/821 ,  H01L2224/82121 ,  H01L2224/82138 ,  H01L2224/82203 ,  H01L2224/82815 ,  H01L2224/82862 ,  H01L2224/82874 ,  H01L2224/83141 ,  H01L2224/83203 ,  H01L2224/839 ,  H01L2224/9222 ,  H01L2224/94 ,  H01L2225/06506 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06548 ,  H01L2225/06551 ,  H01L2225/06572 ,  H01L2225/06589 ,  H01L2924/10156 ,  H01L2924/10252 ,  H01L2924/10253 ,  H01L2924/10272 ,  H01L2924/10322 ,  H01L2924/10329 ,  H01L2924/1033 ,  H01L2924/10335 ,  H01L2924/141 ,  H01L2924/1421 ,  H01L2924/143 ,  H01L2924/1431 ,  H01L2924/1433 ,  H01L2924/14335 ,  H01L2924/15159 ,  H01L2924/19104 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2224/03 ,  H05K3/4661 ,  H05K3/4664 ,  H01L2924/00014 ,  H01L2224/80001 ,  H01L2224/82 ,  H01L2924/00012 ,  H01L2224/08 ,  H01L2224/24 ,  H01L2224/83 ,  H01L2924/014

摘要： A semiconductor device has a plurality of interconnected modular units to form a 3D semiconductor package. Each modular unit is implemented as a vertical component or a horizontal component. The modular units are interconnected through a vertical conduction path and lateral conduction path within the vertical component or horizontal component. The vertical component and horizontal component each have an interconnect interposer or semiconductor die. A first conductive via is formed vertically through the interconnect interposer. A second conductive via is formed laterally through the interconnect interposer. The interconnect interposer can be programmable. A plurality of protrusions and recesses are formed on the vertical component or horizontal component, and a plurality of recesses on the vertical component or horizontal component. The protrusions are inserted into the recesses to interlock the vertical component and horizontal component. The 3D semiconductor package can be formed with multiple tiers of vertical components and horizontal components.

公开(公告)号：US09601448B2

公开(公告)日：2017-03-21

申请号：US15094759

申请日：2016-04-08

申请人： Waseda University

发明人： Kohei Tatsumi

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L23/00 ,  H01L21/52 ,  H01L23/498

CPC分类号： H01L24/10 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/24 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/75 ,  H01L24/76 ,  H01L24/81 ,  H01L24/82 ,  H01L24/83 ,  H01L24/84 ,  H01L24/85 ,  H01L2224/0345 ,  H01L2224/03464 ,  H01L2224/04 ,  H01L2224/0401 ,  H01L2224/04026 ,  H01L2224/04042 ,  H01L2224/05124 ,  H01L2224/05139 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05173 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05664 ,  H01L2224/05673 ,  H01L2224/11334 ,  H01L2224/1134 ,  H01L2224/13012 ,  H01L2224/13017 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13294 ,  H01L2224/13339 ,  H01L2224/13344 ,  H01L2224/13347 ,  H01L2224/13355 ,  H01L2224/13411 ,  H01L2224/136 ,  H01L2224/13611 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/16245 ,  H01L2224/24225 ,  H01L2224/24245 ,  H01L2224/245 ,  H01L2224/2499 ,  H01L2224/29012 ,  H01L2224/29017 ,  H01L2224/29147 ,  H01L2224/32227 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/3716 ,  H01L2224/40095 ,  H01L2224/40227 ,  H01L2224/40991 ,  H01L2224/40996 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48472 ,  H01L2224/48839 ,  H01L2224/48844 ,  H01L2224/48847 ,  H01L2224/48855 ,  H01L2224/48864 ,  H01L2224/48873 ,  H01L2224/48991 ,  H01L2224/48996 ,  H01L2224/73255 ,  H01L2224/73265 ,  H01L2224/73273 ,  H01L2224/73277 ,  H01L2224/75754 ,  H01L2224/76754 ,  H01L2224/81002 ,  H01L2224/81205 ,  H01L2224/81439 ,  H01L2224/81444 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81464 ,  H01L2224/81473 ,  H01L2224/81815 ,  H01L2224/8184 ,  H01L2224/81901 ,  H01L2224/8192 ,  H01L2224/82002 ,  H01L2224/82101 ,  H01L2224/82399 ,  H01L2224/83002 ,  H01L2224/83439 ,  H01L2224/83444 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83464 ,  H01L2224/83473 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/83901 ,  H01L2224/8392 ,  H01L2224/8492 ,  H01L2224/85205 ,  H01L2224/85447 ,  H01L2224/8592 ,  H01L2224/9201 ,  H01L2924/00011 ,  H01L2924/3656 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/01028 ,  H01L2924/01074 ,  H01L2924/01023 ,  H01L2924/014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01046 ,  H01L2924/01045 ,  H01L2224/18 ,  H01L2224/24 ,  H01L2224/82 ,  H01L2224/83205

摘要： An electrode connection structure includes: a first electrode of an electrical circuit; and a second electrode of the electrical circuit that is electrically connected to the first electrode. The first and second electrodes are oppositely disposed in direct or indirect contact with each other. A plated lamination is substantially uniformly formed by plating process from a surface of a contact region and opposed surfaces of the first and second electrodes. A void near the surface of the contact region is filled by formation of the plated lamination. Portions of the plated lamination formed from the opposed surfaces of the first and second electrodes in a region other than the contact region are not joined together.

公开(公告)号：US09589869B2

公开(公告)日：2017-03-07

申请号：US15064955

申请日：2016-03-09

申请人： GaN Systems Inc.

发明人： Cameron McKnight-MacNeil ,  Greg P. Klowak ,  Ahmad Mizan

IPC分类号： H01L23/495 ,  H01L21/56 ,  H01L21/78 ,  H01L23/00 ,  H01L23/31 ,  H01L23/498 ,  H01L23/492 ,  H01L23/482

CPC分类号： H01L23/49503 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/0239 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/245 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40227 ,  H01L2224/40245 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/41051 ,  H01L2224/4118 ,  H01L2224/73203 ,  H01L2224/73263 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/8484 ,  H01L2224/92143 ,  H01L2224/97 ,  H01L2924/00015 ,  H01L2924/01014 ,  H01L2924/04642 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/17747 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/81 ,  H01L2224/48

摘要： Packaging solutions for devices and systems comprising lateral GaN power transistors are disclosed, including components of a packaging assembly, a semiconductor device structure, and a method of fabrication thereof. In the packaging assembly, a GaN die, comprising one or more lateral GaN power transistors, is sandwiched between first and second leadframe layers, and interconnected using low inductance interconnections, without wirebonding. For thermal dissipation, the dual leadframe package assembly can be configured for either front-side or back-side cooling. Preferred embodiments facilitate alignment and registration of high current/low inductance interconnects for lateral GaN devices, in which contact areas or pads for source, drain and gate contacts are provided on the front-side of the GaN die. By eliminating wirebonding, and using low inductance interconnections with high electrical and thermal conductivity, PQFN technology can be adapted for packaging GaN die comprising one or more lateral GaN power transistors.

摘要翻译： 公开了包括横向GaN功率晶体管的器件和系统的封装解决方案，包括封装组件的部件，半导体器件结构及其制造方法。 在封装组件中，包括一个或多个横向GaN功率晶体管的GaN管芯被夹在第一和第二引线框层之间，并且使用低电感互连互连，而无需引线接合。 为了散热，双引线框封装组件可以配置为正面或背面冷却。 优选的实施例有利于用于横向GaN器件的高电流/低电感互连的对准和配准，其中用于源极，漏极和栅极接触的接触区域或焊盘设置在GaN管芯的前侧。 通过消除引线键合，并且使用具有高导电和导热性的低电感互连，PQFN技术可以适用于封装包含一个或多个横向GaN功率晶体管的GaN晶体管。

公开(公告)号：US20170040250A1

公开(公告)日：2017-02-09

申请号：US15306096

申请日：2014-04-24

申请人： SHT SMART HIGH TECH AB

发明人： Johan LIU ,  Di JIANG

IPC分类号： H01L23/498 ,  H01L23/538 ,  H01L21/48

CPC分类号： H01L23/49877 ,  H01L21/486 ,  H01L21/568 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/4985 ,  H01L23/5389 ,  H01L24/24 ,  H01L24/25 ,  H01L24/82 ,  H01L2224/2401 ,  H01L2224/24137 ,  H01L2224/245 ,  H01L2224/25175 ,  H01L2224/82005 ,  H01L2224/82101 ,  H01L2224/82951 ,  H01L2924/0002 ,  H01L2924/00 ,  H01L2924/01006 ,  H01L2924/00012

摘要： There is provided a method for manufacturing a flexible film comprising carbon nanotube interconnects, the method comprising: providing a first substrate; forming and patterning a catalyst layer on the substrate; forming vertically aligned electrically conducting carbon nanotube bundles from the catalyst; providing a second substrate opposite the first substrate and in contact with the carbon nanotube bundles such that a gap is formed between the first and second substrates; providing a flowing curable polymer in the gap between the first substrate and the second substrate such that the gap is filled by the polymer; curing the polymer to form a flexible solid; and removing the first substrate and the second substrate to provide a flexible polymer film comprising carbon nanotube interconnects connectable on respective sides of the film.

摘要翻译： 提供了一种制造包含碳纳米管互连的柔性膜的方法，所述方法包括：提供第一基板; 在衬底上形成和图案化催化剂层; 从催化剂形成垂直排列的导电碳纳米管束; 提供与所述第一基板相对并与所述碳纳米管束接触的第二基板，使得在所述第一和第二基板之间形成间隙; 在所述第一基板和所述第二基板之间的间隙中提供流动的可固化聚合物，使得所述间隙由所述聚合物填充; 固化聚合物以形成柔性固体; 以及去除所述第一基板和所述第二基板，以提供包括在所述膜的相应侧面上可连接的碳纳米管互连的柔性聚合物膜。

公开(公告)号：US20160268185A1

公开(公告)日：2016-09-15

申请号：US15064955

申请日：2016-03-09

申请人： GaN Systems Inc.

发明人： Cameron MCKNIGHT-MACNEIL ,  Greg P. KLOWAK ,  Ahmad MIZAN

IPC分类号： H01L23/495 ,  H01L21/78 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

CPC分类号： H01L23/49503 ,  H01L21/565 ,  H01L21/78 ,  H01L23/3107 ,  H01L23/4824 ,  H01L23/492 ,  H01L23/4952 ,  H01L23/49524 ,  H01L23/49562 ,  H01L23/49575 ,  H01L23/49861 ,  H01L24/02 ,  H01L24/13 ,  H01L24/16 ,  H01L24/17 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L24/35 ,  H01L24/37 ,  H01L24/40 ,  H01L24/41 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/84 ,  H01L24/92 ,  H01L24/97 ,  H01L2224/0239 ,  H01L2224/131 ,  H01L2224/13147 ,  H01L2224/16245 ,  H01L2224/245 ,  H01L2224/291 ,  H01L2224/29139 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/33181 ,  H01L2224/352 ,  H01L2224/37012 ,  H01L2224/37013 ,  H01L2224/37147 ,  H01L2224/40227 ,  H01L2224/40245 ,  H01L2224/40475 ,  H01L2224/40499 ,  H01L2224/41051 ,  H01L2224/4118 ,  H01L2224/73203 ,  H01L2224/73263 ,  H01L2224/81132 ,  H01L2224/81143 ,  H01L2224/81191 ,  H01L2224/81193 ,  H01L2224/81447 ,  H01L2224/81801 ,  H01L2224/81815 ,  H01L2224/83447 ,  H01L2224/83801 ,  H01L2224/83815 ,  H01L2224/8384 ,  H01L2224/84801 ,  H01L2224/84815 ,  H01L2224/8484 ,  H01L2224/92143 ,  H01L2224/97 ,  H01L2924/00015 ,  H01L2924/01014 ,  H01L2924/04642 ,  H01L2924/1033 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/17747 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2224/83 ,  H01L2224/84 ,  H01L2224/81 ,  H01L2224/48

摘要： Packaging solutions for devices and systems comprising lateral GaN power transistors are disclosed, including components of a packaging assembly, a semiconductor device structure, and a method of fabrication thereof In the packaging assembly, a GaN die, comprising one or more lateral GaN power transistors, is sandwiched between first and second leadframe layers, and interconnected using low inductance interconnections, without wirebonding. For thermal dissipation, the dual leadframe package assembly can be configured for either front-side or back-side cooling. Preferred embodiments facilitate alignment and registration of high current/low inductance interconnects for lateral GaN devices, in which contact areas or pads for source, drain and gate contacts are provided on the front-side of the GaN die. By eliminating wirebonding, and using low inductance interconnections with high electrical and thermal conductivity, PQFN technology can be adapted for packaging GaN die comprising one or more lateral GaN power transistors.

摘要翻译： 公开了包括横向GaN功率晶体管的器件和系统的封装解决方案，包括封装组件的部件，半导体器件结构及其制造方法。在封装组件中，包括一个或多个横向GaN功率晶体管的GaN管芯， 夹在第一和第二引线框层之间，并且使用低电感互连互连，而不引线接合。 为了散热，双引线框封装组件可以配置为正面或背面冷却。 优选的实施例有利于用于横向GaN器件的高电流/低电感互连的对准和配准，其中用于源极，漏极和栅极接触的接触区域或焊盘设置在GaN管芯的前侧。 通过消除引线键合，并且使用具有高导电和导热性的低电感互连，PQFN技术可以适用于封装包含一个或多个横向GaN功率晶体管的GaN晶体管。