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1.发明申请公开(公告)号：US20210273067A1
公开(公告)日：2021-09-02
申请号：US17321695
申请日：2021-05-17
发明人： Wei-Chun Huang , Martin Poelzl , Thomas Feil , Maximilian Roesch
IPC分类号： H01L29/423 , H01L29/40 , H01L29/66 , H01L29/78 , H01L29/10 , H01L29/417 , H01L29/06 , H01L29/08 , H01L21/768 , H01L27/06
摘要： A semiconductor device includes a contact opening extending through a source region and a body region of the device. An electrically insulative spacer lines sidewalls of the semiconductor substrate formed by the contact opening, and is recessed along the sidewalls such that at least part of the source region or body region is uncovered by the electrically insulative spacer. A body contact plug is in the contact opening. A first body contact region formed adjacent a bottom of the contact opening adjoins the body contact plug at the bottom of the contact opening. A second body contact region formed in the part of the source region or body region uncovered by the electrically insulative spacer adjoins the body contact plug along the part of the source region or body region uncovered by the electrically insulative spacer.
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公开(公告)号：US20210167175A1
公开(公告)日：2021-06-03
申请号：US17176494
申请日：2021-02-16
发明人： Thomas Feil
IPC分类号： H01L29/40 , H01L29/78 , H01L29/739 , H01L29/43 , H01L29/423 , H01L29/66 , H01L21/283
摘要： Disclosed is a transistor device which includes a semiconductor body having a first surface, a source region, a drift region, a body region being arranged between the source region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric, wherein the field electrode comprises a first layer and a second layer, wherein the first layer has a lower electrical resistance than the second layer, wherein a portion of the second layer is disposed above and directly contacts a portion of the first layer.
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公开(公告)号：US10957771B2
公开(公告)日：2021-03-23
申请号：US15930059
申请日：2020-05-12
发明人： Thomas Feil
IPC分类号： H01L21/336 , H01L29/66 , H01L29/40 , H01L29/78 , H01L29/739 , H01L21/283 , H01L29/43 , H01L29/423
摘要： Disclosed is a transistor device which includes a semiconductor body having a first surface, a source region, a drift region, a body region being arranged between the source region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes a first layer and a second layer. The second layer includes a different conductive material as the first layer. A portion of the second layer is disposed above and directly contacts a portion of the first layer.
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4.发明授权公开(公告)号：US11069639B2
公开(公告)日：2021-07-20
申请号：US16282401
申请日：2019-02-22
IPC分类号： H01L23/00 , H01L21/56 , H01L21/48 , H01L23/31 , H01L25/16 , H01L25/07 , H01L23/29 , H01L23/538 , H01L21/78 , H01L21/683 , H01L27/088
摘要： In an embodiment, a module includes a first electronic device in a first device region and a second electronic device in a second device region. The first electronic device is operably coupled to the second electronic device to form a circuit. Side faces of the first electronic device and of the second electronic device are embedded in, and in direct contact with, a first epoxy layer.
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公开(公告)号：US20210005715A1
公开(公告)日：2021-01-07
申请号：US16919337
申请日：2020-07-02
发明人： Thomas Feil
摘要： A semiconductor transistor device is described that has a source region, a body region including a vertical channel region, a drain region, a gate region laterally aside the channel region, a body contact region formed by doping, a diffusion barrier layer, and a conductive region formed of a conductive material. The body contact region electrically contacts the body region, the diffusion barrier layer being arranged in between. The doping of the body contact region is of the same conductivity type but of higher concentration than a doping of the body region. The conductive region has a contact area that forms an electrical contact to the body contact region, the contact area of the conductive region being arranged vertically above an upper end of the channel region. A method for manufacturing the semiconductor transistor device is also described.
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公开(公告)号：US20200273956A1
公开(公告)日：2020-08-27
申请号：US15930059
申请日：2020-05-12
发明人： Thomas Feil
IPC分类号： H01L29/40 , H01L29/78 , H01L29/66 , H01L29/739 , H01L21/283 , H01L29/43 , H01L29/423
摘要： Disclosed is a transistor device which includes a semiconductor body having a first surface, a source region, a drift region, a body region being arranged between the source region and the drift region, a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes a first layer and a second layer. The second layer includes a different conductive material as the first layer. A portion of the second layer is disposed above and directly contacts a portion of the first layer.
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7.发明授权公开(公告)号：US10580888B1
公开(公告)日：2020-03-03
申请号：US16058631
申请日：2018-08-08
发明人： Oliver Blank , Thomas Feil , Maximilian Roesch , Martin Poelzl , Robert Haase , Sylvain Leomant , Bernhard Goller , Andreas Meiser
IPC分类号： H01L29/78 , H01L21/76 , H01L29/08 , H01L29/10 , H01L29/66 , H01L21/02 , H01L21/768 , H01L21/3063
摘要： A semiconductor device includes a gate trench extending into a Si substrate, a body region in the Si substrate, the body region including a channel region which extends along a sidewall of the gate trench, a source region in the Si substrate above the body region, a contact trench extending into the Si substrate and separated from the gate trench by a portion of the source region and a portion of the body region, the contact trench being filled with an electrically conductive material which contacts the source region at a sidewall of the contact trench and a highly doped body contact region at a bottom of the contact trench, and a diffusion barrier structure formed along the sidewall of the contact trench and disposed between the highly doped body contact region and the channel region, the diffusion barrier structure including alternating layers of Si and oxygen-doped Si.
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公开(公告)号：US20190172917A1
公开(公告)日：2019-06-06
申请号：US16270806
申请日：2019-02-08
发明人： Thomas Feil
IPC分类号： H01L29/40 , H01L29/78 , H01L29/423 , H01L21/283 , H01L29/43
CPC分类号： H01L29/407 , H01L21/283 , H01L29/404 , H01L29/405 , H01L29/4236 , H01L29/435 , H01L29/66734 , H01L29/7397 , H01L29/7813
摘要： Disclosed is a transistor device and a method for producing a transistor device. The transistor device includes: a source region, a drift region, and a body region arranged between the source region and the drift region; a gate electrode adjacent the body region and dielectrically insulated from the body region by a gate dielectric; and a field electrode adjacent the drift region and dielectrically insulated from the drift region by a field electrode dielectric. The field electrode includes first and second layers.
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公开(公告)号：US11908904B2
公开(公告)日：2024-02-20
申请号：US17400575
申请日：2021-08-12
发明人： Sylvain Leomant , Thomas Feil , Yulia Polak , Maximilian Roesch
IPC分类号： H01L27/088 , H01L29/78 , H01L29/40
CPC分类号： H01L29/407 , H01L27/088 , H01L29/7802
摘要： A semiconductor device includes: a semiconductor substrate having opposing first and second main surfaces; a plurality of transistor cells each including a source region, a drift zone, a body region separating the source region from the drift zone, a field plate trench extending into the drift zone and including a field plate, and a planar gate on the first main surface and configured to control current through a channel of the body region; a drain region at the second main surface; and a diffusion barrier structure including alternating layers of Si and oxygen-doped Si and a Si capping layer on the alternating layers of Si and oxygen-doped Si. The diffusion barrier structure may be interposed between body regions of adjacent transistor cells and/or extend along the channel of each transistor cell and/or vertically extend in the semiconductor substrate between adjacent field plate trenches.
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公开(公告)号：US11417732B2
公开(公告)日：2022-08-16
申请号：US16919337
申请日：2020-07-02
发明人： Thomas Feil
摘要： A semiconductor transistor device is described that has a source region, a body region including a vertical channel region, a drain region, a gate region laterally aside the channel region, a body contact region formed by doping, a diffusion barrier layer, and a conductive region formed of a conductive material. The body contact region electrically contacts the body region, the diffusion barrier layer being arranged in between. The doping of the body contact region is of the same conductivity type but of higher concentration than a doping of the body region. The conductive region has a contact area that forms an electrical contact to the body contact region, the contact area of the conductive region being arranged vertically above an upper end of the channel region. A method for manufacturing the semiconductor transistor device is also described.
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