公开(公告)号：US11031478B2

公开(公告)日：2021-06-08

申请号：US15878183

申请日：2018-01-23

Applicant: Infineon Technologies Austria AG

Inventor： Wei-Chun Huang ,  Martin Poelzl ,  Thomas Feil ,  Maximilian Roesch

IPC: H01L29/10 ,  H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L21/768 ,  H01L27/06 ,  H01L29/739 ,  H01L29/872

Abstract: A semiconductor device includes a trench extending into a first main surface of a semiconductor substrate, and a gate electrode and a gate dielectric in the trench. The gate dielectric separates the gate electrode from the semiconductor substrate. A first region having a first conductivity type is formed in the semiconductor substrate at the first surface adjacent the trench. A second region having a second conductivity type is formed in the semiconductor substrate below the first region adjacent the trench. A third region having the first conductivity type is formed in the semiconductor substrate below the second region adjacent the trench. A contact opening in the semiconductor substrate extends into the second region. An electrically insulative spacer is disposed on sidewalls of the semiconductor substrate formed by the contact opening, and an electrically conductive material in the contact opening adjoins the electrically insulative spacer on the sidewalls.

公开(公告)号：US20210273067A1

公开(公告)日：2021-09-02

申请号：US17321695

申请日：2021-05-17

Applicant: Infineon Technologies Austria AG

Inventor： Wei-Chun Huang ,  Martin Poelzl ,  Thomas Feil ,  Maximilian Roesch

IPC: H01L29/423 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78 ,  H01L29/10 ,  H01L29/417 ,  H01L29/06 ,  H01L29/08 ,  H01L21/768 ,  H01L27/06

Abstract: A semiconductor device includes a contact opening extending through a source region and a body region of the device. An electrically insulative spacer lines sidewalls of the semiconductor substrate formed by the contact opening, and is recessed along the sidewalls such that at least part of the source region or body region is uncovered by the electrically insulative spacer. A body contact plug is in the contact opening. A first body contact region formed adjacent a bottom of the contact opening adjoins the body contact plug at the bottom of the contact opening. A second body contact region formed in the part of the source region or body region uncovered by the electrically insulative spacer adjoins the body contact plug along the part of the source region or body region uncovered by the electrically insulative spacer.

公开(公告)号：US20190229198A1

公开(公告)日：2019-07-25

申请号：US15878183

申请日：2018-01-23

Applicant: Infineon Technologies Austria AG

Inventor： Wei-Chun Huang ,  Martin Poelzl ,  Thomas Feil ,  Maximilian Roesch

IPC: H01L29/423 ,  H01L29/10 ,  H01L21/768 ,  H01L29/417 ,  H01L27/06 ,  H01L29/78 ,  H01L29/66

Abstract: A semiconductor device includes a trench extending into a first main surface of a semiconductor substrate, and a gate electrode and a gate dielectric in the trench. The gate dielectric separates the gate electrode from the semiconductor substrate. A first region having a first conductivity type is formed in the semiconductor substrate at the first surface adjacent the trench. A second region having a second conductivity type is formed in the semiconductor substrate below the first region adjacent the trench. A third region having the first conductivity type is formed in the semiconductor substrate below the second region adjacent the trench. A contact opening in the semiconductor substrate extends into the second region. An electrically insulative spacer is disposed on sidewalls of the semiconductor substrate formed by the contact opening, and an electrically conductive material in the contact opening adjoins the electrically insulative spacer on the sidewalls.