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    Compensation of imaging deviations in a particle-beam writer using a convolution kernel
    155.
    发明授权
    Compensation of imaging deviations in a particle-beam writer using a convolution kernel 有权
    使用卷积核对粒子束写入器中成像偏差的补偿

    公开(公告)号：US09520268B2

    公开(公告)日：2016-12-13

    申请号：US14795535

    申请日：2015-07-09

    Applicant: IMS Nanofabrication AG

    Inventor： Elmar Platzgummer

    IPC: G21K5/04 ,  H01J37/317 ,  H01J37/302 ,  G06F17/50 ,  H01J37/09 ,  H01J37/04

    CPC classification number: H01J37/3177 ,  G06F17/5072 ,  G06F17/5081 ,  H01J37/045 ,  H01J37/09 ,  H01J37/3026 ,  H01J37/3175 ,  H01J2237/043 ,  H01J2237/3175 ,  H01J2237/31764

    Abstract: An exposure pattern is computed for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus to match a reference writing tool, and/or for compensating a deviation of the imaging from a pattern definition device onto the target from a desired value of critical dimension along at least one direction in the image area on the target: The desired pattern is provided as a graphical representation suitable for the reference tool, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

    Abstract translation: 计算曝光图案以在带电粒子多光束处理装置中的目标上曝光期望图案以匹配参考写入工具，和/或用于从图案定义装置将图像偏离从图案定义装置补偿到目标上 在目标图像区域中至少沿一个方向的临界尺寸的期望值：所需图案作为适合参考工具的图形表示，在目标上的图像区域上提供。 使用卷积核，其描述从图形表示的元素到以所述元素的标称位置为中心的一组像素的映射。 通过图形表示与卷积核的卷积来计算标称曝光图案，所述标称曝光图案适于在用处理装置曝光时在目标上产生标称剂量分布。

    Two-dimensional mass resolving slit mechanism for semiconductor processing systems
    156.
    发明授权
    Two-dimensional mass resolving slit mechanism for semiconductor processing systems 有权
    用于半导体处理系统的二维质量分辨率缝隙机构

    公开(公告)号：US09496117B2

    公开(公告)日：2016-11-15

    申请号：US14158972

    申请日：2014-01-20

    Applicant: Varian Semiconductor Equipment Associates, Inc.

    Inventor： Jason M. Schaller ,  Robert B. Vopat

    IPC: G21K1/04 ,  H01J37/05 ,  H01J37/317 ,  H01J37/09

    CPC classification number: H01J37/05 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/057 ,  H01J2237/1501

    Abstract: An adjustable mass-resolving slit assembly includes an aperture portion and an actuation portion. The aperture portion includes first and second shield members that define an aperture therebetween for receiving an ion beam during semiconductor processing operations. The actuation portion is coupled to the aperture portion and selectively and independently adjusts the position of the first and second shield members along first and second non-parallel axes. Adjusting the position of the first and second shield members along the first axis adjusts a width of the aperture. Adjusting the position of the first and second shield members along the second axis adjusts a region of the first and second shield members impinged by the ion beam. Methods for using the adjustable mass-resolving slit assembly are also disclosed.

    Abstract translation: 可调节的质量分辨率狭缝组件包括孔部分和致动部分。 开口部分包括在半导体处理操作期间限定其间用于接收离子束的孔的第一和第二屏蔽构件。 致动部分联接到开口部分，并且选择性地和独立地调节第一和第二屏蔽部件沿第一和第二非平行轴线的位置。 沿着第一轴线调节第一和第二屏蔽件的位置调整孔径的宽度。 沿着第二轴调整第一和第二屏蔽构件的位置调节由离子束撞击的第一和第二屏蔽构件的区域。 还公开了使用可调节质量分辨率缝隙组件的方法。

    Nano-patterned system and magnetic-field applying device thereof
    157.
    发明授权
    Nano-patterned system and magnetic-field applying device thereof 有权
    纳米图案化系统及其磁场施加装置

    公开(公告)号：US09484138B2

    公开(公告)日：2016-11-01

    申请号：US14389972

    申请日：2012-07-17

    Applicant: Guoqiang Yu ,  Peng Guo ,  Xiufeng Han ,  Chaohui Guo ,  Xiaoyu Sun ,  Xiangqian Zhou

    Inventor： Guoqiang Yu ,  Peng Guo ,  Xiufeng Han ,  Chaohui Guo ,  Xiaoyu Sun ,  Xiangqian Zhou

    IPC: H01F7/20 ,  H01F41/00 ,  G01R33/09 ,  H01L43/12 ,  H01J37/09

    CPC classification number: H01J37/09 ,  G01R33/093 ,  G01R33/096 ,  H01F7/202 ,  H01F7/204 ,  H01F41/00 ,  H01J37/141 ,  H01J2237/0262 ,  H01J2237/0264 ,  H01J2237/28 ,  H01J2237/31754 ,  H01L43/12

    Abstract: A nano-patterned system comprises a vacuum chamber, a sample stage and a magnetic-field applying device. The magnetic-field applying device comprises a power supply, magnetic poles, and a magnetic-field generation device having a magnetic conductive soft iron core and a coil connected to the power supply and wound on the soft iron core to generate a magnetic field. The soft iron core is a semi-closed frame structure and the magnetic poles are respectively disposed at the two ends of the semi-closed frame structure. The sample stage is inside the vacuum chamber. The magnetic poles are opposite one another inside the vacuum chamber with respect to the sample stage. The coil and soft iron core are outside the vacuum chamber. The soft iron core leads the magnetic field generated by the coil into the vacuum chamber. The magnetic poles locate a sample on the sample stage and apply a local magnetic field.

    Abstract translation: 纳米图案系统包括真空室，样品台和磁场施加装置。 磁场施加装置包括电源，磁极和具有导电软铁芯的磁场产生装置和连接到电源的线圈并缠绕在软铁芯上以产生磁场的磁场产生装置。 软铁芯是半封闭框架结构，磁极分别设置在半封闭框架结构的两端。 样品台位于真空室内。 磁极相对于样品台在真空室内彼此相对。 线圈和软铁芯在真空室外。 软铁芯将线圈产生的磁场引入真空室。 磁极将样品定位在样品台上并施加局部磁场。

    Observation apparatus and optical axis adjustment method
    158.
    发明授权
    Observation apparatus and optical axis adjustment method 有权
    观察装置和光轴调整方法

    公开(公告)号：US09466457B2

    公开(公告)日：2016-10-11

    申请号：US14422531

    申请日：2013-07-01

    Applicant: Hitachi High-Technologies Corporation

    Inventor： Yusuke Ominami ,  Mami Konomi ,  Shinsuke Kawanishi ,  Sukehiro Ito

    IPC: H01J37/18 ,  H01J37/20 ,  H01J37/22 ,  H01J37/28 ,  H01J37/04 ,  H01J37/16 ,  H01J37/09 ,  H01J37/26

    CPC classification number: H01J37/18 ,  H01J37/04 ,  H01J37/09 ,  H01J37/16 ,  H01J37/20 ,  H01J37/228 ,  H01J37/261 ,  H01J37/28 ,  H01J2237/045 ,  H01J2237/164 ,  H01J2237/1825 ,  H01J2237/2602 ,  H01J2237/2605

    Abstract: Ordinary charged particle beam apparatuses have each been an apparatus manufactured for dedicated use in making observations in a gas atmosphere at atmospheric pressure or at a pressure substantially equal thereto. There have existed no devices capable of simply making observations using an ordinary high-vacuum charged particle microscope in a gas atmosphere at atmospheric pressure or at a pressure approximately equal thereto. Furthermore, ordinary techniques have been incapable of observing the same spot of the sample in such an atmosphere using a charged particle beam and light simultaneously. This invention thus provides an apparatus including: a charged particle optical tube that irradiates a sample with a primary charged particle beam; a vacuum pump that evacuates the inside of the charged particle optical tube; a diaphragm arranged to separate a space in which the sample is placed from the charged particle optical tube, the diaphragm being detachable and allowing the primary charged particle beam to permeate or pass therethrough; and an optical microscope positioned on the opposite side of the charged particle optical tube across the diaphragm and the sample, the optical microscope having an optical axis thereof aligned with at least part of an extension of the optical axis of the charged particle optical tube.

    Abstract translation: 普通带电粒子束装置各自是制造用于在大气压或基本上等于其的压力下在气体气氛中进行观察的专用制造装置。 在大气压或大致相等的压力下，不存在使用普通的高真空带电粒子显微镜简单地进行观察的装置。 此外，普通技术已经不能使用带电粒子束和光同时在这样的大气中观察样品的相同点。 因此，本发明提供了一种装置，包括：带有电荷的粒子束照射样品的带电粒子光管; 抽真空带电粒子光管内部的真空泵; 隔膜，布置成将带有样品的空间与带电粒子光管分离，隔膜可拆卸并允许初级带电粒子束渗透或通过; 以及光学显微镜，其位于带电粒子光管的横跨隔膜和样品的相对侧，光学显微镜的光轴与带电粒子光管的光轴的延伸部分的至少一部分对准。

    Multi-beam tool for cutting patterns
    159.
    发明授权
    Multi-beam tool for cutting patterns 有权
    用于切割图案的多光束工具

    公开(公告)号：US09443699B2

    公开(公告)日：2016-09-13

    申请号：US14694959

    申请日：2015-04-23

    Applicant: IMS Nanofabrication AG

    Inventor： Elmar Platzgummer ,  Hans Löschner

    IPC: H01J37/317 ,  H01J37/09 ,  H01J37/04 ,  H01J37/147

    CPC classification number: H01J37/3177 ,  H01J37/045 ,  H01J37/09 ,  H01J37/147 ,  H01J37/3174 ,  H01J2237/0435

    Abstract: In a charged-particle multi-beam processing apparatus for exposure of a target with a plurality of parallel particle-optical columns, each column has a beam shaping device forming the shape of the illuminating beam into a desired pattern composed of a multitude of sub-beams, by means of an aperture array device, which defines the shape of a respective sub-beam by means of an array of apertures, and a deflection array device selectively deflecting sub-beams off their nominal paths; thus, only the non-selected sub-beams can reach the target. According to many embodiments of the invention each beam shaping device is provided with a first field-boundary device and a second field-boundary device, which are the first and last plate elements traversed by the beam. One of the first and second field-boundary devices defines a field-free space interval so as to accommodate feeding lines for controlling the deflection array device.

    Abstract translation: 在用多个平行粒子光学柱曝光靶的带电粒子多光束处理装置中，每列具有将照明光束的形状形成为由多个子像素组成的期望图案的光束整形装置， 通过孔阵列器件，其通过孔阵列限定相应子光束的形状，并且偏转阵列器件选择性地使子光束偏离其标称通路; 因此，只有未选择的子光束才能到达目标。 根据本发明的许多实施例，每个光束整形装置设置有第一场边界装置和第​​二场边界装置，第一场边界装置和第​​二场边界装置是由横梁穿过的第一和最后的板件。 第一和第二场边界装置之一限定了无场空间间隔，以适应用于控制偏转阵列装置的馈线。

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